456 TRANSISTOR Search Results

2SB1370

Abstract: 2SB1565 2SB1655
Contextual Info: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319

a143x

Abstract: IMB16 A143
Contextual Info: Transistors UMA7N / FMA7A IMB16 96-386-A143X (96-456-B143X) 588

Contextual Info: User's Guide SLVU298 – March 2009 TPS54040EVM-456 0.5-A, SWIFT Regulator Evaluation Module This user's guide contains background information for the TPS54040 as well as support documentation for the TPS54040EVM-456 evaluation module HPA456 . Also included are the performance specifications,

Contextual Info: N AMER PHILIPS/DISCRETE 1^53^31 0020540 Q 2SE D B U K 456-1000A B U K 456-1000B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK456-50A

Abstract: drain BUK456 BUK456-50B T0220AB
Contextual Info: E5 E N AMER PHILIPS/DISCRETE ^£3=131 D 0Q20S20 S B U K 456-50A B U K 456-50B P o w erM O S tra n s isto r G E N E R A L D ESCR IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200

eltec

Contextual Info: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Alabama (Missouri) Strategic Marketing, Huntsville, AL (205) 464-0490 Cycle Sales, Inc., Harvard, MA (508) 456-6868 Arizona (New Mexico, Nevada)

2N5302

Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage

Cx2829

Abstract: mindspeed command SRCCTL CX29704 CX28296
Contextual Info: CN8237/CX29704 ATM SAR Evaluation Module Users Guide 500089A February 2002 Ordering Information Model Number Package Ambient Temperature Range CN8237 456-pin BGA –40 °C to 85 °C CX29704 27 x 27, 272-Pin PBGA –40 °C to 85 °C Revision History Revision

Contextual Info: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

IEC-68-2-58

Abstract: HAL114 HAL114UA-E IEC68-2-20 switch ic
Contextual Info: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated

4 Pin SMD Hall sensors

Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor
Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Hall-Effect-Sensor 115C

Abstract: SMD Hall sensors code 115c hall Hall sensors marking code D hall sensor fan 115E HAL114 HAL114UA-E HAL115
Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

IEC-68-2-58

Abstract: SOT-89A HAL114 HAL114UA-E IEC68-2-20 to92ua micronas hall 203
Contextual Info: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated

Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

115E

Abstract: HAL114 HAL114UA-E HAL115
Contextual Info: MICRONAS INTERMETALL HAL114, HAL115 Hall Effect Sensor Family MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

HA200-SB

Abstract: construction hall effect transducers 200-SI 500w power amplifier pcb diagram 100ARMS PCB Mounting Hall Effect Current Transformer HT 200-srud 25-NP HT 500 srud transducers
Contextual Info: E17755 Issued July 1994 Halleffect transducers,current and voltage This data sheet covers the following products. RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440 286-456 286-462 286-478 286-484

LV 25-P

Abstract: LV 25-NP HA200-SB hall current transducer LA 100P 286377 50psp1 200-SRI 500-SBD HT 200-srud PCB Mounting Hall Effect Current Transformer
Contextual Info: Issued March 2001 232-5250 Data Pack E Data Sheet Hall effect transducers, current and voltage This data sheet covers the following products: RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-434 286-456 286-462

ZENER 2V7

Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
Contextual Info: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60

BC548 BC847

Abstract: BC338 BC546 BC338/BC546
Contextual Info: Philips Semiconductors Selector guide TYPE NUMBER Bipolar transistors V CEO •c V (mA) h FE Ptot (mW) min. fT(M IN ) max. typ (MHz) PAGE Leaded transistors NPN BC337 45 500 800 100 600 100 BC337A 60 500 800 100 600 100 59 BC338 25 500 800 100 600 100 59

transistor 3904

Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Contextual Info: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range