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    42060 Search Results

    42060 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    10144042-06011LF Amphenol Communications Solutions Minitek®0.8mm, Wire to Board connector, Vertical SMT Header, 6Positions, Tin Plating, Cream Color, Halogen Free, Glow Wire Compatible Visit Amphenol Communications Solutions
    UE863G242060361 Amphenol Communications Solutions 2X2SFP ULTRAPORT W/H LP Visit Amphenol Communications Solutions
    UE863G442060361 Amphenol Communications Solutions 2X4 ULTRAPORT SFP PP W/ LP Visit Amphenol Communications Solutions
    UE863G242060261 Amphenol Communications Solutions 2X2SFP ULTRAPORT COMBO Visit Amphenol Communications Solutions
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    42060 Price and Stock

    Molex 1720420602

    CONN HDR 6POS 7.50MM PCB SLDR
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    DigiKey 1720420602 Tray 5,297 1
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    Avnet Abacus 1720420602 25 Weeks 420
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    STMicroelectronics TS420-600H

    SCR 600V 4A IPAK
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    DigiKey TS420-600H Tube 3,151 1
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    Newark TS420-600H Bulk 5,862 1
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    Avnet Silica TS420-600H 21,525 16 Weeks 75
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    EBV Elektronik TS420-600H 9,450 16 Weeks 75
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    Molex 1720420601

    CONN HDR 6POS 7.50MM PCB SLDR
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    DigiKey 1720420601 Tray 2,282 1
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    Avnet Abacus 1720420601 25 Weeks 630
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    Molex 0442060005

    CONN HEADER VERT 8POS 4.2MM
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    DigiKey 0442060005 Tray 2,086 1
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    Molex 0442060002

    CONN HEADER VERT 24POS 4.2MM
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    DigiKey 0442060002 Tray 1,758 1
    • 1 $1.99
    • 10 $1.618
    • 100 $1.34475
    • 1000 $1.09164
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    Avnet Americas 0442060002 Tray 14 Weeks 1,680
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    Find more 42060 price and stock on Findchips.com

    42060 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4206-001 Tusonix FILTER, PI, 3000PF, BUSH MOUNT; Attenuation, 1 GHz:70dB; Attenuation, 10 GHz:70dB; Attenuation, 10 MHz:10dB; Attenuation, 100 MHz:55dB; Capacitance:3000pF; Current rating:25A; Depth, external:9.52mm; Length / Height Original PDF
    4206-001LF Tusonix Filters - EMI/RFI Filters (LC, RC Networks) - FILTER LC(PI) 3000PF CHASSIS Original PDF
    4206-001 LF Tusonix FILTER, PI, 3000PF, BUSH MOUNT; Attenuation, 1 GHz:70dB; Attenuation, 10 GHz:70dB; Attenuation, 10 MHz:10dB; Attenuation, 100 MHz:55dB; Capacitance:3000pF; Current rating:25A; Depth, external:9.52mm; Length / Height, RoHS Compliant: Yes Original PDF
    4206-006 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-006 Tusonix #4-40 UNC-2A Pi Filter Original PDF
    4206-006LF Tusonix EMI/RFI Filters (LC, RC Networks), Filters, FILTER EMI 3000 PF PI TYPE Original PDF
    4206-007 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-007LF Tusonix Filters - EMI/RFI Filters (LC, RC Networks) - FILTER LC(PI) 4500PF/9000PF CHAS Original PDF
    4206-012 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-016 Tusonix EMI/RFI Filters (LC, RC Networks), Filters, FILTER Original PDF
    4206-016 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-016LF Tusonix EMI/RFI Filters (LC, RC Networks), Filters, FILTER Original PDF
    4206-020 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-020LF Tusonix Filters - EMI/RFI Filters (LC, RC Networks) - FILTER LC(PI) 1500PF/3000PF CHAS Original PDF
    4206-023 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-025 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-027 Tusonix EMI/RFI FILTER Original PDF
    4206-030 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF
    4206-032 Tusonix EMI/RFI FILTER Bushing 5/16in Original PDF

    42060 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    JY MCU

    Abstract: Omnivision ov7740 OV77 2X10PTS
    Text: Atmel SAM4S-WPIR-RD . User Guide 42060A–ATARM–12/2012 Section 1 1.1 Scope . 1-1


    Original     		2060Aâ JY MCU Omnivision ov7740 OV77 2X10PTS PDF

    epcos 565-2

    Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
    Text: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57540 epcos 565-2 B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311 PDF

    B57550G0103F000

    Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
    Text: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57550 B57550G0103F000 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390 PDF

    KTC4377

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		OT-89 KTC4377 OT-89 KTC4377 PDF

    0.875

    Abstract: .112-40 unc-2b Glenair 06324
    Text: High-Per fo r m a n ce fiber optic i n t e rc o n n e c t s o lutions August 2012 Fiber Optic Interconnect solutions MIL-DTL-38999 Type Fiber Optic Connection System MIL-PRF-28876 Fiber Optic Connection System Eye-Beam Expanded Beam Fiber Optics GFOCA M83526


    Original     		MIL-DTL-38999 MIL-PRF-28876 M83526 InteB-42 0.875 .112-40 unc-2b Glenair 06324 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Silicon Epitaxial Transistors High DC Current Gain and excellent hFE Linearity


    Original     		2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)


    Original     		2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P PDF

    14024

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain and excellent hFE Linearity hFE 1 =140-600 (V CE=1.0V, IC=0.5A)


    Original     		2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P 14024 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4377 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


    Original     		OT-89-3L KTC4377 OT-89-3L PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR（NPN ） TO—92 FEATURES Power amplifier applications 1. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO


    Original     		2SC3279 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2015 THIS PAGE INTENTIONALLY LEFT BLANK. Gas Discharge Tubes Table of Contents General Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    ktc4377

    Abstract: SA SOT89
    Text: KTC4377 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — 2.6 4.25 2.4 3.75 Low voltage 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		KTC4377 OT-89 OT-89 ktc4377 SA SOT89 PDF

    transistor 2sc2500

    Abstract: TO 92L NPN Transistor
    Text: 2SC2500 TO-92L Transistor NPN TO-92L 4.700 5.100 1. EMITTER 7.800 8.200 2. COLLECTOR 0.600 0.800 3. BASE 1 Features 0.350 0.550 3 2 13.800 14.200 1.270 TYP — Strobe flash applications Medium power amplifier applications — 2.440 2.640 0.000 0.300 1.600


    Original     		O-92L O-92L 2SC2500 500mA transistor 2sc2500 TO 92L NPN Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3279 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		2SC3279 100mA PDF

    capacitor 80d sprague

    Abstract: Sprague 80D 80D392P050JE2DE3 80D123P035KE2DE3 80D153P016 80D153P035ME2DE3 80D221P250JD2DE3 80D272P035JA2DE3 80D102P200MD 80D822P050ME2DE3
    Text: 80D Vishay Sprague Aluminum Capacitors + 85 °C, Snap-In FEATURES • High ripple capability • Molded cover available in 2 and 3 terminal design with standoffs Fig.1 Component Outlines QUICK REFERENCE DATA DESCRIPTION RIPPLE CURRENT MULTIPLIERS VALUE Nominal case size


    Original     		10lectual 18-Jul-08 capacitor 80d sprague Sprague 80D 80D392P050JE2DE3 80D123P035KE2DE3 80D153P016 80D153P035ME2DE3 80D221P250JD2DE3 80D272P035JA2DE3 80D102P200MD 80D822P050ME2DE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SL1 1 2 2 h y b r i d arrester series SEMITRON GREENTUBE SERIES 3 TERMINAL, HYBRID ARRESTER SERIES TOTALLY NON-RADIOACTIVE ELECTRICAL CHARACTERISTICS 090V 200V 260V 450V LD ^D ^D 70-120 140-250 210-350 420-600 Ì IMPULSE SPARKOVER (MAX) (V) 150 250 350


    OCR Scan     		00V/S. 8/20psec, 1122i PDF

    2SC3301

    Abstract: 2sa120 2SC2880
    Text: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E


    OCR Scan     		2SC2880 2SC3301 2sa120 2SC2880 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2500 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER LOW SATURATION TO -92L ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent (DC)


    OCR Scan     		KSC2500 PDF

    2SC2982

    Abstract: No abstract text available
    Text: TO SHIBA 2SC2982 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2982 Unit in mm STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS 1.6 M AX — 1.7MAX. • High DC Current Gain and Excellent hpg Linearity 0.4 ±0.05 t t - : hFE (1) = 140-600 (Vce = IV, Ie = 0.5A)


    OCR Scan     		2SC2982 250mm2x0 2SC2982 PDF

    2SC2500

    Abstract: transistor 2sc2500 power transistor 2sc2500
    Text: TO SH IBA 2SC2500 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2500 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • • 5 .1 M A X . High DC Current Gain and Excellent hpE Linearity : hFE (l) = 140-600 (Vc e = 1V, Ie = 0.5A)


    OCR Scan     		2SC2500 2SC2500 transistor 2sc2500 power transistor 2sc2500 PDF

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IBA 2SC3670 TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS -iS-, 7.1 M A X • • High DC Current Gain and Excellent hjpE Linearity hjrE (1) —140—600


    OCR Scan     		2SC3670 2-7D101A 2SC3670 PDF

    2-7D101A

    Abstract: 2SC3670
    Text: TO SH IB A 2SC3670 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3670 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM PO W ER AM PLIFIER APPLICATIONS • 7.1 M AX High DC Current Gain and Excellent hpg Linearity : hpE (i) = 140~600 : hFE(2) = 70 (Min.), 200 (Typ.)


    OCR Scan     		2SC3670 961001EAA2' 2-7D101A 2SC3670 PDF

    E5 ou ic

    Abstract: 2SC2982
    Text: TO SH IB A 2SC2982 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC2982 Unit in mm STO RO BO FLASH A PPLIC A TIO N S M E D IU M P O W E R A M P LIF IE R A PPLIC A TIO N S 1.6 M AX —J- • 1.7MAX. High DC Current Gain and Excellent hpg Linearity


    OCR Scan     		2SC2982 250mm2x0 E5 ou ic 2SC2982 PDF

    KSC2500

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC KSC2500 IME D 7^4142 000^31 | lT ~ Z j~ 2 « 3 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER LOW SATURATION TO-92L • Vet (sat =0.5V (lc =2A , hi= 50mA) ABSOLUTE MAXIMUM RATINGS (T,=25°C ) Symbol Characteristic Collector-Base Voltage


    OCR Scan     		KSC2500 T-29-23 fcfla-40 PDF