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    KTC4377 Search Results

    KTC4377 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTC4377 Kexin Epitaxial Planar NPN Transistor Original PDF
    KTC4377 Korea Electronics Strobo Flash Transistor Original PDF
    KTC4377 TY Semiconductor Epitaxial Planar NPN Transistor - SOT-89 Original PDF
    KTC4377 Korea Electronics Strobo Flash Transistor Scan PDF
    KTC4377 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    KTC4377 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KTC4377 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    KTC4377 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTC4377

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES High DC Current Gain and Excellent hFE Linearity G 600 VCE=1V, IC=0.5A J B E : hFE(1)=140 C H : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).


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    PDF KTC4377 250mm KTC4377

    KTC4377

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    PDF OT-89 KTC4377 OT-89 KTC4377

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES ・High DC Current Gain and Excellent hFE Linearity C H G J B E : hFE 1 =140~600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).


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    PDF KTC4377

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4377 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


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    PDF OT-89-3L KTC4377 OT-89-3L

    ktc4377

    Abstract: SA SOT89
    Text: KTC4377 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — 2.6 4.25 2.4 3.75 Low voltage 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    PDF KTC4377 OT-89 OT-89 ktc4377 SA SOT89

    MARKING SA transistor

    Abstract: KTC4377 SOT-89 marking sc transistor marking 2a
    Text: KTC4377 KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 2 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


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    PDF KTC4377 OT-89 MARKING SA transistor KTC4377 SOT-89 marking sc transistor marking 2a

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES 2003. 9. 16 Revision No : 4 1/2


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    PDF KTC4377

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTC4377 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 2 A ICM: Collector-base voltage


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    PDF OT-89 KTC4377 OT-89

    mark A sot-89

    Abstract: KTC4377
    Text: SEMICONDUCTOR KTC4377 MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark S KTC4377 * Grade A A,B,C,D Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


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    PDF KTC4377 OT-89 mark A sot-89 KTC4377

    Untitled

    Abstract: No abstract text available
    Text: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1


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    PDF KTC4377 OT-89 500mW 500mA

    KTC4377

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES ・High DC Current Gain and Excellent hFE Linearity C H G J B E : hFE 1 =140~600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).


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    PDF KTC4377 250mm KTC4377

    marking SA

    Abstract: KTC4377
    Text: KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics. 3 SOT-89 Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(Ta


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    PDF KTC4377 A/50mA OT-89 10-Jul-07 250mm OT-89 marking SA KTC4377

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1


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    PDF KTC4377 OT-89 500mW 500mA

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引(按字母顺序) ALPHANUMERIC INDEX A 产品目录表(按电性能) TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


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    PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    sot-89 marking N5

    Abstract: KTC4377
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain and Excellent I lf e Linearity : hFE l =140~600(VcE=lV, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, Ic=2A).


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    PDF KTC4377 250mm2 sot-89 marking N5 KTC4377

    sot89 transistor JB

    Abstract: marking JB SOT-89 sot89 marking JB npn transistor sot-89 MARKING AG KTC4377
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • High DC Current Gain and Excellent h |.|. Linearity : hFEÜ =140~600 VCE=lV, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCe=1V, IC=2A).


    OCR Scan
    PDF KTC4377 250mm2 sot89 transistor JB marking JB SOT-89 sot89 marking JB npn transistor sot-89 MARKING AG KTC4377

    Untitled

    Abstract: No abstract text available
    Text: S EM IC O N D U C T O R KTC4377 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR STR O BO FLASH A PPLICATIO N. HIGH C U R R E N T APPLICATIO N. FEA TU RES n H • H igh DC C urrent G ain and E xcellent h FE L inearity : h FE 1 = 140 ~ 6 00(V CE= 1V , IC=0.5A )


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    PDF KTC4377