Untitled
Abstract: No abstract text available
Text: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. – 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective
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PFC3M-10000
112nC
/-20V
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igbt1
Abstract: PFC3M-10000
Text: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. A 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective
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PFC3M-10000
112nC
igbt1
PFC3M-10000
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igbt 200v 20a
Abstract: PFC3M-10000
Text: SENSITRON PFC3M-10000 SEMICONDUCTOR PRELIMINARY TECHNICAL DATA DATA SHEET 4173, REV. A 10 KW, 3 Phase Module For Active Power Factor Correction • • • • • • O • -55 to +150 C • Access to all IGBT Leads • Easy Heat Sink Mounting • Cost Effective
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PFC3M-10000
112nC
igbt 200v 20a
PFC3M-10000
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4173
Abstract: GP1UD26RK GP1UD26RK00F
Text: GP1UD26RK - Sharp Microelectronics Products Product Search Location: Optoelectronics - Infrared » IR Remote Receiver » GP1UD26RK Advanced Search Parametric Search GP1UD26RK Home Optoelectronics Infrared GP1UD26R Infrared •Photocouplers •IrDA •IR Remote Receiver
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GP1UD26RK
GP1UD26RK
GP1UD26R
GP1UD26RK00F
4173
GP1UD26RK00F
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diode 3982
Abstract: thyristor 406 T308N T458N T709N T1059N T1589N T2159N
Text: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Verlustl. P d Luftmen. v L Schaltung pro KB + - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Diode D Thyristor
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T308N
T458N
T709N
T1059N
T1589N
T2159N
diode 3982
thyristor 406
T308N
T458N
T709N
T1059N
T1589N
T2159N
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thyristor 406
Abstract: T1059N T1589N T2159N T308N T458N T709N
Text: B6C - Schaltung ~~~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 930 V 2200 V Verlustl. P d Luftmen. v L Schaltung pro KB + - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Diode D Thyristor
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T308N
T458N
T709N
T1059N
T1589N
T2159N
thyristor 406
T1059N
T1589N
T2159N
T308N
T458N
T709N
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13740
Abstract: D2228N D4457N D448N D5807N D5809N D758N thyristor 250 2 D 215
Text: B2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 55 V 200 V 110 V 400 V 220 V 800 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L
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D448N
D758N
D2228N
D5809N
13740
D2228N
D4457N
D448N
D5807N
D5809N
D758N
thyristor 250 2 D 215
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Untitled
Abstract: No abstract text available
Text: MC54/74F378 PARALLEL D REGISTER WITH ENABLE The MC54/74F378 is a 6-bit register with a buffered common enable. This device is similar to the F174 but with common Enable rather than common Master Reset. The F378 consists of six edge-triggered D-type flip-flops with individual D
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MC54/74F378
MC54/74F378
54/74F
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Untitled
Abstract: No abstract text available
Text: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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CEP10N6/CEB10N6
O-220
O-263
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4173 SB20W05V No.4173 Schottky B a rrie r Diode Twin Type • C athode Common 50V , 2A R ectifier A p p licatio n s • H ig h frequency rectification (switching regulators, converters, choppers). F eatu re s • Low forw ard voltage (Vp m ax = 0.55V).
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EN4173
SB20W05V
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DIODE S6 73
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 3QE D • b4S7S5S 002^050 T ■ -p -lj-l-*J 3 PHOTO SENSER _ PS6001A PHOTO REFLECTIVE SE N SE R D ESCRIPTIO N The PS6001A it a photo reflective senser containing a GaAs light emitting diode and an NPN silicon photo-transistor.
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PS6001A
PS6001A
b4E7S25
y/-73
DIODE S6 73
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Untitled
Abstract: No abstract text available
Text: FASCO INDS/ SENISYS Optical Switches BMTTTSfl DDDIOT^ S » S E N I 4DE D i CLI800W CLI810W CLI820W CLI830W CLI835W t i GENERAL DESCRIPTION — This optical switch couples a gallium arsenide infrared emitting diode and a silicon phototransistor for a range of guaranteed minimum sensor
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CLI800W
CLI810W
CLI820W
CLI830W
CLI835W
CU835W
33mw/â
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Voltage senser
Abstract: PS6001A VC60 light senser IR SENSER
Text: N E C ELECTRONICS INC 3QE D • b4S7SSS QO^ñSñ T ■ - p - l j - l -* J3 PHOTO SENSER _ P S6 001 A PHOTO REFLECTIVE S E N S E R D ES C R IPT IO N The PS6001A it a photo reflective senser containing a GaAs light em itting diode and an NPN silicon photo-transistor.
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PS6001A
PS6001A
b427S25
f-41-73
bM275E5
Voltage senser
VC60
light senser
IR SENSER
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Untitled
Abstract: No abstract text available
Text: Zener Regulator Diodes Part Number Microsemi Division Package Outline Type DO-213AA DO-213AA DO-213AA . DO-35 B SQ. MELF : DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 B SQ. MELF DO-35 DO-35 DO-35 DO-35 DO-7 DO-35 DO-7 DO-213AA DO-213AA DO-35 DO-213AA
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DO-213AA
DO-213AA
DO-35
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transistor k 4110
Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili
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i-noa36Â
osit34Â
354G-01
transistor k 4110
K 4014 transistor
vqe 14e
TLO51
wf vqe 24 d
DIODE 4014
IC 4022
MOC70
S 417T
WF VQE 13
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Untitled
Abstract: No abstract text available
Text: CEP9N25/CEB9N25 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 250V, 8.1A, R ds o n =450 it Q @VGS=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.
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CEP9N25/CEB9N25
450itQ
O-22Q
O-263
to-263
to-220
CEP9N25/CEB9N25
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K1273
Abstract: K2158 1A4M K1399 K2111 K680A a1464 D82C J356 k1587
Text: QUICK REFERENCE GUIDE QUICK REFERENCE GUIDE 1 QUICK REFERENCE TABLE 3 PIN MINI MOLD □ Switching Diodes I Q UICK REFERENCE GUIDE_ Qß ! 3 PIN MINI MOLD SC-59 . _ □ Transistors and FETs v c e o 15 20 20 2S C 2223 2S A1462 40 30
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SC-59
A1462
2SB624
A1464
B736A
K1582
J185W
RD36M
RD39M
RD10FM
K1273
K2158
1A4M
K1399
K2111
K680A
D82C
J356
k1587
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j 1126
Abstract: No abstract text available
Text: N E C 30 E ELECTRONICS INC D • L.M27525 002=1700 2 ■ -T^ 4|~ ?3 PH O TO .INTERRUPTER PS4602 O N E P IEC E PH O T O IN T E R R U P T E R DESCRIPTIO N P A CKA G E DIMENSIONS in millim«t*n The PS4602 is the PS4601 with black case. This black case is designed to optimize the ambient light rejection. The electrical
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M27525
PS4602
PS4602
PS4601
PS4601.
b427555
T-41-73
PS460
j 1126
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Untitled
Abstract: No abstract text available
Text: 257 54F/74F257 Connection Diagrams i Quad 2-Input Multiplexer W ith 3-State Outputs i s E lo a Description The ’F257 is a quad 2-input m ultiplexer with 3-state outputs. Four bits of data from tw o sources can be selected using a Common Data Select input. The four outputs present the selected data in true non-inverted
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54F/74F257
54F/74F
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F257
Abstract: No abstract text available
Text: 257 54F/74F257 Connection Diagrams *— i Quad 2-Input Multiplexer With 3-State Outputs Description The ’ F257 is a quad 2-input m u ltip le xe r w ith 3-state ou tputs. Four b its of data from tw o sources can be selected using a Com m on Data Select input. The fo u r o u tp u ts present the selected data in true non-inverted
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54F/74F257
54F/74F
F257
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TA49018
Abstract: RFP50N06 50A60V f1s50n06
Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFG50N06,
RFP50N06,
RF1S50N06SM
TA49018.
RF1S50N06SM
AN7254
AN7260.
TA49018
RFP50N06
50A60V
f1s50n06
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NDS9945
Abstract: 2501lA
Text: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.
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NDS9945
bSD113G
b5G1130
004DGDÃ
NDS9945
2501lA
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74AC
Abstract: 99555
Text: o 00 CM C Tl National JSjA Semiconductor 54AC/74AC280 • 54ACT/74ACT280 9-Bit Parity Generator/Checker Features General Description The 'A C /’ACT280 is a high-speed parity generator/checker that accepts nine bits of input data and detects whether an even or an odd number of these inputs is HIGH. If an even
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54AC/74AC280
54ACT/74ACT280
ACT280
74AC
99555
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Untitled
Abstract: No abstract text available
Text: QSFCT574T, 2574T High Speed CMOS Bus Interface 8-bit Registers Q Q S54/74FCT574 Q S54/74FCT2574 FEATURES/BENEFITS • Pin and function compatible to the 74FCT574 and 74FCT574T • CMOS power levels: <7.5 mW static • Available in PDIP, ZIP, SOIC, QSOP, CERDIP
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QSFCT574T,
2574T
S54/74FCT574
S54/74FCT2574
74FCT574
74FCT574T
MIL-STD-883
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