B4E7S25 Search Results

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

dt5 tuner module

Abstract: op102 ITT Semiconductors D78P0 D0122 ddt237
Contextual Info: \ USER’S MANUAL NEC ¿¿PD78023 ¿¿PD78024 ¿¿PD78P024 Document No. IEU-1373A O. D. No. IEU-842A Date Published February 1995 P Printed in Japan NEC Corporation 1994 b427525 Q Q' I BD' n bSS NOTES FOR CMOS D EVICES PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 3 8 3 3 6 2 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The /iPD4383362 is a 262,144 words by 36 bits synchronous static RAM fabricated with advanced CMOS

MC-428000F32

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-428000F32 8 M-WORD BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The MC-428000F32 is a 8,388,608 words by 32 bits dynamic RAM module on which 16 pieces of 16 M DRAM: /¿PD4217405 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.

1NTC11

Abstract: D78238
Contextual Info: • Í .LI27SE5 004317S 4 ^ NEC NEC Electronics Inc. B n ECE JUPD78238 Family pPD78233/234/237/238/P238 8-Bit, K-Serîes Microcontrollers With A/D and D/A Converters, Real-Time Output Ports June 1993 Description The ¿/PD78233, piPD78234, ¿JPD78237, ^PD78238, and

UPD72070GF

Abstract: Intel 82077 MARK 4B 720KB TAG 8434 NEC 82077 UPD72070
Contextual Info: Chapter 1 General 1.1 System Overview The UPD72070 Floppy Disk Controller FDC is a new advanced Floppy Disk Controller that can support four standard Floppy Disk Drives (FDD)’s and two Apple specific FDDs, respectively. For the standard FDDs, the uPD72070 FDC

Contextual Info: CHAPTER 8. 8.1 COMMANDS AND RESPONSES TYPES OF COMMANDS AND RESPONSES Commands are classified into five groups: setup command.-, operation commands, statistic commands, CLB switch commands, and special commands. Table 8-1 lists the functions of each group and the commands that belong

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w o rds by 9 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use o f Rambus S ignaling

126LNS

Abstract: PD6102G SE303A 126LNS-6285Z uPC1474HA uPC1475HA signal detection circuit "peak hold" constant vol remote IC NEC MPD1943G mpc1474
Contextual Info: N E C ELECTRONICS INC 3GE D • L.4S7SS5 0030234 Ô ■ Y -ll-ll D ATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT ELECTRON DEVICE / ¿ P C 1 4 7 4 H A , / ¿ P C 1 4 7 5 H A REMOTE CONTROL PREAM PLIFIER DESCRIPTION The /¿PC1474HA and ¿¿PC1475HA are silicon monolithic integrated circuit designed for remote control preamplifica­

Contextual Info: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.

Contextual Info: DATA SHEET ^ I E C _¿¿PD43256B / M OS IN T E G R A T E D C IR C U IT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The itPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

C1313HA

Abstract: PC1313HA C1313H uPC1313 mPC1313HA C2335 UPC1313HA nec 772 mpc1313 ALC Automatic Level Control
Contextual Info: N E C 6427525 N E C E L E C TR ON I CS EL E CTRONICS INC 05E D | bM27SSS GDEETSl ? INC 05E 22951 D BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 1 3 1 3 H L O W NOISE DUA L PREAMPLI FI ER A T-77-2/ SI LI CON BIPOLAR M O N O L I T H I C I NTEGRATED C I R C U I T

PD488170L

Abstract: REF05
Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ /¿ P D 4 8 8 1 7 0 L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extremely-high-speed CMOS DRAM organized as 2M words by 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling

L1349

Contextual Info: PRELIMINARY DATA SHEET N EC MOS INTEGRATED CIRCUIT MC-424000LAB72F 3.3 V OPERATION 4M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000LAB72F is a 4 194 304 words by 72 bits dynamic RAM module on which 18 pieces of 16M DRAM ( m PD 4217400L) are assembled.

D431016LE

Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
Contextual Info: MOS INTEGRATED CIRCUIT juPD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /JPD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.

k 7500

Contextual Info: NEC MOS IN TEGRATED CIRCUIT ¿¿PD16423 ELECTRON DEVICE SOURCE DRIVER FOR 192-OUTPUT TFT-LCD CAPABLE OF ACCOMMODATING UP TO 8 TONES The pPD16423 is a source driver for T F T -LC D and can accom m odate up to 8 tones. The data input is 3-bit x 3 -b it digital signal inpul and the p P D 1 6 42 3 is suitable for d isplays for O A applications. The p P D l6 4 23

8251a usart interface from z80

Abstract: 72065B verilog code for 8254 timer NEC V30MX Rambus ASIC Cell OPENCAD CMOS Block library nec floppy circuit NEC 71059 NEC 71051 V30MX
Contextual Info: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design System of NEC. The family allows

Contextual Info: P R E L IM IN A R Y P R O D U C T IN F O R M A T IO N M OS INTEGRATED CIRCUIT ¿¿PD784021 16-/8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The /¿PD784021 is a 78K/II+ subseries product. The /iPD784021 is approximately twice as fast as the / PD78324 subseries, and offers significant improvements over /iPD78324 subseries functions, such as 16-bit tim er counters,

Contextual Info: CHAPTER 24 CPU INSTRUCTION SET DETAILS This chapter provides a detailed description of the operation of each V r4101 instruction in both 32- and 64-bit modes. The instructions are listed in alphabetical order. Exceptions that may occur due to the execution of each instruction are listed after the description of each

Contextual Info: D A IA b h lttl MQS INTEGRATED CIRCUIT ¿¿PD7 5 4 3 0 2 ,7 5 4 3 0 4 4-BIT SINGLE-CHIP MICROCONTROLLER The |iPD754304 is one of the “75XL Series” 4-bit single-chip microcontrollers with data processing capability comparable to that of 8-bit microcontrollers.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/W RITE MODE Description The //PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

Contextual Info: CHAPTER 5 1 Digital I/O PERI PHERAL Ports The uPD75238 contains T he uPD75238 empl oy s I/O ports All data the ports 8-bit enabled Fig. 5- 1 are m app ed memory I/O of and as HARDWARE FUNCTIONS the to data uPD75238, bit I/O ports, port I / O. This m ea ns