413MW Search Results

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

tc51100ap

Abstract: DIP18-P-300E TC514100
Contextual Info: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

MSM5116400F

Abstract: MSM5116400
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Contextual Info: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

AZL-70

Contextual Info: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the

Contextual Info: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of

Contextual Info: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C1002-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 1,048,576 X 1 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C1002 is CMOS fully decoded dynamic RAM organized as 1,048,576 words x 1

TOLD-9211

Abstract: told 9211
Contextual Info: X T L I f l C A E TECHNOLOGY _ LT1110 Micropower DC-DC Converter Adjustable and Fixed 5V, 12V F€RTUR€S D C S C R IPTIO n • Operates at Supply Voltages From 1,0V to 30V ■ Works In Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components

Contextual Info: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs PIN-PACKAGE -40°C to +85°C 48 TQFP-EP* MAX1180ECM+ -40°C to +85°C 48 TQFP-EP* +Denotes a lead-free and RoHS-compliant package.

Contextual Info: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs PIN-PACKAGE -40°C to +85°C 48 TQFP-EP* MAX1180ECM+ -40°C to +85°C 48 TQFP-EP* +Denotes a lead-free and RoHS-compliant package.

Contextual Info: KM48C512LL CMOS DRAM 512Kx8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 b itx 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.

200849

Contextual Info: 19-2097; Rev 0; 7/01 Dual 10-Bit, 105Msps, +3.3V, Low-Power ADC with Internal Reference and Parallel Outputs Features ♦ Single +3.3V Operation ♦ Excellent Dynamic Performance: 58.5dB SNR at fIN = 20MHz 72dB SFDR at fIN = 20MHz ♦ SNR Flat within 1dB for fIN = 202MHz to 100MHz

MSM5116400F

Abstract: MSM5116400
Contextual Info: FEDD5116400F-01 1Semiconductor MSM5116400F This version: May 2001 Previous version :  4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs -40°C to +85°C 48 TQFP-EP* *EP = Exposed paddle. Functional Diagram appears at end of data sheet. 37 38 39 40 41 42 43

ALT1110

Abstract: TOLD-9211 told 9211 0621a sprague 501D 501d sprague LT1111 TOLD9211
Contextual Info: _ LT1110 / T l i nTECHNOLOGY tA B Micropower DC-DC Converter Adjustable and Fixed 5V, 12V FCRTURCS DCSCRIPTIOn • Operates at Supply Voltages From 1 .OV to 30V ■ Works in Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components

Contextual Info: MN 4 1 C 1 0 0 0 A / Â L / À S J - 06/07/08 SPECIFICATIONS 20 1 1M BIT □ 1 bit. CMOS processing wide operating r a n g e and is s u i t a b l e to a p p l i c a t i o n s r a n g i n g to c o n s u m e r □ RAM is t h e new g e n e r a t i o n C M O S d y n a m i c RAM o r g a n i z e d

Contextual Info: MITSUBISHI LSIs Rev. 3.0 M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM PIN CONFIGURATION ( TOP VIEW ) D E SC R IP T IO N This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity

Contextual Info: O K I semiconductor M S M 5 1 4 2 5 8 A _ 262,144-W O R D x 4-B IT DYNAM IC RAM GENERAL DESCRIPTION The MSM514258A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514258A is OKI's CMOS silicon gate process technology.

MAX1180

Abstract: MAX1180ECM MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 MAX2451 MAX4108
Contextual Info: KIT ATION EVALU E L B AVAILA 19-2097; Rev 1; 2/07 Dual 10-Bit, 105Msps, 3.3V, Low-Power ADC with Internal Reference and Parallel Outputs PIN-PACKAGE -40°C to +85°C 48 TQFP-EP* MAX1180ECM+ -40°C to +85°C 48 TQFP-EP* +Denotes a lead-free and RoHS-compliant package.

MSM5116400D

Abstract: D-50 D-60 MSM5116400 MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
Contextual Info: Semiconductor This version:Apr.1999 MSM5116400D 4,194,304-Word ´ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400D is a 4,194,304-word ´ 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption

TOLD-9211

Contextual Info: " X T ^ u r m TECHNOLOGY _ LT111Q Micropower DC-DC Converter Adjustable and Fixed 5V, 12V F€RTUR€S D € S C R IP T IO n • Operates at Supply Voltages From 1,0V to 30V ■ Works In Step-Up or Step-Down Mode ■ Only Three External Off-the-Shelf Components