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    40N60BD1 Price and Stock

    IXYS Corporation IXSK40N60BD1

    IGBT 600V 75A TO-264AA
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    IXYS Corporation IXGX40N60BD1

    IGBT 600V 75A PLUS247
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    IXYS Corporation IXGR40N60BD1

    IGBT 600V 70A ISOPLUS247
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    IXYS Corporation IXSX40N60BD1

    IGBT 600V 75A PLUS247
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    IXYS Corporation IXSR40N60BD1

    IGBT PT 600V 70A ISOPLUS247
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    40N60BD1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PLUS247 40N60BD1 40N60BD1 247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		247TM 40N60BD1 PDF

    diode b34

    Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110
    Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		40N60BD1 PLUS247 diode b34 b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor C110 PDF

    40N60BD1

    Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		ISOPLUS247TM 40N60B 40N60BD1 lead40N60BD1) 728B1 40N60B 40N60 IXGR40N60BD1 IXGR40N60 PDF

    TO-264

    Abstract: 40N60BD1 PLUS247
    Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		40N60BD1 PLUS247 TO-264 40N60BD1 PLUS247 PDF

    40N60BD1

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		247TM 40N60BD1 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		ISOPLUS247TM 40N60B 40N60BD1 728B1 PDF

    40N60BD1

    Abstract: PLUS247
    Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		40N60BD1 IC110 PLUS247 728B1 PLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		40N60BD1 IC110 O-264 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		247TM 40N60BD1 728B1 PDF

    40n60b

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGR 40N60BD1 IGBT with Diode ISOPLUS247TM package VCES IC25 VCE sat tfi(typ) Short Circuit SOA Capability (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		40N60BD1 ISOPLUS247TM 40n60b PDF

    40N60BD1

    Abstract: 40n60b
    Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		40N60BD1 247TM 40N60BD1 40n60b PDF

    P 1010

    Abstract: AL 102 074d
    Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads


    OCR Scan     		40N60BD1 PLUS247â O-247 P 1010 AL 102 074d PDF

    vces

    Abstract: 40N60BD1 40N60B IXGR40N60BD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		ISOPLUS247TM 40N60B 40N60BD1 E153432 IXGR40N60BD1) vces 40N60B IXGR40N60BD1 PDF

    C7650

    Abstract: 40n60b TYP 513 309 40N60BD1
    Text: n ix Y S Advanced Technical Information IGBT with Diode IXSK 40N60BD1 IXSX 40N60BD1 PLUS247 package v CES ^C25 VCE sat Short Circuit SOA Capability oc g n r ^fi(typ) = 600 V = 75 A = 2.2 V = 120 ns * ] ÔE Symbol Test Conditions V CES Tj =25°Cto150°C


    OCR Scan     		PLUS247TM 40N60BD1 40N60BD1 Cto150 to150 PLUS247TM O-264AA C7650 40n60b TYP 513 309 PDF

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1 PDF

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET PDF

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    b1113

    Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
    Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2


    Original     		PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14 PDF

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 PDF