C30644E
Abstract: InGaAs apd photodiode C30644 C30645E photodiode Avalanche photodiode (APD) FOR POWER RCA 432 RCA H 432 C30644ECER C30645 C30645ECER
Text: E I G t & G/CANADA/OPTOELEK C i l 3G30bl0 IO OOOOO'ì? 432 H C ANA Planar InGaAs ÁPD C30644, C30645 DATA SH EET E le c t r o Optics • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise
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3G30bl0
C30644,
C30645
C30644
C30645
ED-0025/08/88
C30644E
InGaAs apd photodiode
C30645E
photodiode Avalanche photodiode (APD) FOR POWER
RCA 432
RCA H 432
C30644ECER
C30645ECER
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Untitled
Abstract: No abstract text available
Text: E G & 6/CAN ADA /OPTOELEK • m A ■ l l f IG D ■ rm i Electro I Optics 3G30bl0 a0G01b3 T3Q « C A N A InGaAs Photodiodes C30986 Series DATA SH EET Fo r Detection of 10 0 0 to 1 7 0 0 nm Radiation Transim pedance Pre am p lifie r M odules W ith or W ithout Integral Fib e r Optic Pigtails
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3G30bl0
a0G01b3
C30986
14-pin
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Untitled
Abstract: No abstract text available
Text: E G & G/CANAD A/O PTOELEK IO D • 303DblQ DOODObS «Ì22 H C A N A C86051E Series GaAIAs Injection Lasers T -w -ù s Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors
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303DblQ
C86051E
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CS6051
Abstract: SIECOR Fiber Optic cable RCA Solid State siecor C86051EW1 C86051EW2 C86051EW3 C86051EW4 RCA Solid State power devices SIECOR Fiber Optics
Text: E fi & G / C A N A D A / O P T O E L E K IO ]> 3030blG DD0GGL.5 <122 « C A N A C86051E Series GaAIAs Injection Lasers Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors
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3030blg
C86051E
CS6051
SIECOR Fiber Optic cable
RCA Solid State
siecor
C86051EW1
C86051EW2
C86051EW3
C86051EW4
RCA Solid State power devices
SIECOR Fiber Optics
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SG2007A
Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
Text: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available
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3G30bl0
QD0G070
SG2000A
SG2012A
42S8R6
VS-117
SG2012A
SG2007A
SG2004A
3G30b
904nm
SG2006A
M9002
SG2002A
SG2007
SG2010A
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TCN-1000-12
Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Text: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range
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3D30bl0
TCN-1000
t-hi-67
TCN-1000-93
TCN-1000-12
TCN-1000-3
3Q30bl0
NEP 250
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gaseous lasers
Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using
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3030blD
C86093E
200ns
910nm
C86093E
900to
gaseous lasers
C86083E
910nm
laser rca
rca 019
1200cu
general electric
laser 910nm
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