VTE-C15AL
Abstract: No abstract text available
Text: SbE D 3G30bDT D001214 GaAIAs Infrared Emitting Diodes 42=1 B i V C T V T E -C 1 5 A L 15 mil Chip — 880 nm E G & G VACTEC D E SC R IP T IO N P A C K A G E D IM E N S IO N S inch mm EG&G Vactec fabricates its LED chips using a state-of-the-art liquid phase
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3G30bDT
D001214
VTE-C15AL
VTE-C15AL
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VTT0942
Abstract: VTT0943 VTT0944
Text: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53
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3G30b0T
GGD1177
VTT0942,
100/iA
50/1A
VTT0942
VTT0943
VTT0944
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C30644E
Abstract: InGaAs apd photodiode C30644 C30645E photodiode Avalanche photodiode (APD) FOR POWER RCA 432 RCA H 432 C30644ECER C30645 C30645ECER
Text: E I G t & G/CANADA/OPTOELEK C i l 3G30bl0 IO OOOOO'ì? 432 H C ANA Planar InGaAs ÁPD C30644, C30645 DATA SH EET E le c t r o Optics • Spectral response range 1100 to 1700 nm ■ High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise
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3G30bl0
C30644,
C30645
C30644
C30645
ED-0025/08/88
C30644E
InGaAs apd photodiode
C30645E
photodiode Avalanche photodiode (APD) FOR POWER
RCA 432
RCA H 432
C30644ECER
C30645ECER
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31AA
Abstract: CLD31 VTD31 VTD31AA Photodiode vactec
Text: Sb E D 3G30bD^ OODlin 02 T • ■p-41-S I VCT VTD31, VTD31AA VTP Process Photodiodes C L D 3 1 , 3 1 A A IN D U S T R Y E Q U IV A LE N T E G 8c 0 VACTEC PACKAGE DIMENSIONS inch (mm) CASE 13 PRODUCT DESCRIPTION CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2)
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3D30bD^
VTD31,
VTD31AA
CLD31,
Cto75Â
VTD31
31AA
CLD31
VTD31
VTD31AA
Photodiode vactec
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VTT0942
Abstract: VTT0943 VTT0944
Text: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION
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3G30b
VTT0942,
T-41-61
VTT0942
VTT0943
VTT0944
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VTP100A
Abstract: No abstract text available
Text: 5bE D 3G30bCH OODlObB 2 5 b VCT VTP100A VTP Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm .7 5 ( 19 . 1 ) CATHODE MARK 4 5 ° X .0 3 5 ( 0 . 8 9 ) - r • MINIMUM NOM. - .2 3 0 ( 5 .« 4 ) SENSITIVE .2 1 0 ( 5 .3 3 ) SURFACE CATHODE
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3G30bCH
VTP100A
T-41-51
x1013
VTP100A
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photodiode vtb 5041
Abstract: k420 VTB5040B VTB5041B
Text: SbE D • 3G30bGT DT D VTB Process Photodiodes [ fi & £ BIVCT V T B 5 04 0 B , 5041 B VACTEC PACKAGE D IM EN SIO N S inch mm] PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a “flat" window, dual lead TO-5 package. The package incorporates an infrared rejec
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3G30bGT
103fl
VTB5040B,
VTB5040B
VTB5041B
7x1012
photodiode vtb 5041
k420
VTB5040B
VTB5041B
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RCA 32
Abstract: C86069E-14 C86072E-13 C86072E-14
Text: 1 E G & G/CANADA/OPTOELEK V B M B IDE D ÆM Electro • 3G30blü 0 D 0 0 0 3 cì 3 ■ C ANA IlU f IOptics NEWSLETTER PRELIMINARY DATA SHEET SERIES C86069 AND C86072 1550 nm Edge Emitting LED's The RCA series of 1550 nm LED's are edge emitting InGaAsP diodes produced by
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3G30blÃ
C86069
C86072
RCA 32
C86069E-14
C86072E-13
C86072E-14
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RCA c30808
Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Text: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo sensitive Surface Areas 0.2 mm2 to 100 mm2
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3G30blQ
C30807,
C30808,
C30809
C30810,
C30822,
C30831
l-571
C30810
C30807
RCA c30808
TAG60
3G30
L568
C30822 photodiode
C30810
d28j
35XL
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SIECOR Fiber Optic cable
Abstract: SIECOR Fiber Optics Siecor 10-dimensional C86045EV1 C86045EV2 C86045EV3 C86045G C86052E C86053E
Text: c E Q 8, 6/CANADA/0PT0ELEK 10E J> • 3G30blQ 000005Ô 7 M C A N A ■ B 0 * MM Electro ■ WMWm I Optics 1300 nm Pulsed Laser Series DATA SHEET C86045EV1 C86045EV2 C86045EV3 C86045G C 86053E C86053G - Removable cap - Hermetic package with glass window - Multimode fiber
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3G30blQ
0000D5Ã
C86045EV3
C86045G
C86053E
C86053G
C86045EV1
C86045EV2
SIECOR Fiber Optic cable
SIECOR Fiber Optics
Siecor
10-dimensional
C86052E
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Untitled
Abstract: No abstract text available
Text: E G & 6/CAN ADA /OPTOELEK • m A ■ l l f IG D ■ rm i Electro I Optics 3G30bl0 a0G01b3 T3Q « C A N A InGaAs Photodiodes C30986 Series DATA SH EET Fo r Detection of 10 0 0 to 1 7 0 0 nm Radiation Transim pedance Pre am p lifie r M odules W ith or W ithout Integral Fib e r Optic Pigtails
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3G30bl0
a0G01b3
C30986
14-pin
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Untitled
Abstract: No abstract text available
Text: 5L.E D 3G30bCn GD01204 GaAs Infrared Emitting Diodes VTE1013, 16, 18 TO-46 Flat Window Package - 940 nm E & G G VACTEC T 4H 1 PACKAGE DIMENSIONS inch mm f * SÛT « V C T 1.00 ( 25 .4 ) .154 ( 3 .9 1 ) .140 ( 3 .5 6 ) (0.64) ( 0 .3 8 ) •043 ( 1.0 .0 3 7 ( 0 .9 4 )
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3G30bCn
GD01204
VTE1013,
VTE1013
VTE1016
VTE1018
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VTB1112BI
Abstract: No abstract text available
Text: S la E D 3G30bCH G001G34 VTB Process Photodiodes E G 8. G MSS H V C T VT B 11 12B I, 13BI 7 VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) Small area planar silicon photodiode in
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G001G34
VTB1112BI,
to-46
vtb1112bi
vtb1113bi
2x1013
VTB1112BI
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Untitled
Abstract: No abstract text available
Text: ; 8. 6 / C A N A D A / O P T O E L E K n • m lOE D 3D3üblG OOQOOn ô ■ CANA 7^/-¿>7 ÆM Electro W # InGaAsP Infrared Emitters ■ Optics 1300 nm L E D S E R IES DATA S H EET C86057E SERIES - Dual-in-Line package Single or multimode fiber C86013E - Coaxial package multimode fiber
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C86057E
C86013E
C86054E
55/xW
1300nm
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CS6051
Abstract: SIECOR Fiber Optic cable RCA Solid State siecor C86051EW1 C86051EW2 C86051EW3 C86051EW4 RCA Solid State power devices SIECOR Fiber Optics
Text: E fi & G / C A N A D A / O P T O E L E K IO ]> 3030blG DD0GGL.5 <122 « C A N A C86051E Series GaAIAs Injection Lasers Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors
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3030blg
C86051E
CS6051
SIECOR Fiber Optic cable
RCA Solid State
siecor
C86051EW1
C86051EW2
C86051EW3
C86051EW4
RCA Solid State power devices
SIECOR Fiber Optics
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J16-18A-R01M-HS
Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a
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J16TE
3G30bGS
00D03Sb
3030b05
00GG3E7
J16-18A-R01M-HS
J16-8SP-R05M-HS
J16-18A-R01M
germanium photodiode
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SG2007A
Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
Text: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available
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3G30bl0
QD0G070
SG2000A
SG2012A
42S8R6
VS-117
SG2012A
SG2007A
SG2004A
3G30b
904nm
SG2006A
M9002
SG2002A
SG2007
SG2010A
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PDF
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TCN-1000-12
Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Text: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range
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3D30bl0
TCN-1000
t-hi-67
TCN-1000-93
TCN-1000-12
TCN-1000-3
3Q30bl0
NEP 250
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PDF
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VTT9012
Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Text: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900
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82M63
VTT9012
VTT9112
VTT1010
VTT9313
Vcn-50V
VTT1013
VTT1031
bd 7122
VTA3121
31T52
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j15te
Abstract: photoconductive MCT 15TE2
Text: Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors are photoconductive HgCdTe elem ents on therm oelectric coolers. They are designed for in d u strial and m ilitary applications
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J15TE
J15TE2
J15TE3
J15TE4
3G30b05
photoconductive MCT
15TE2
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gaseous lasers
Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using
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3030blD
C86093E
200ns
910nm
C86093E
900to
gaseous lasers
C86083E
910nm
laser rca
rca 019
1200cu
general electric
laser 910nm
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FND-100
Abstract: FND-100Q FND100 FND100Q FND10 ultrafast photodiode ITT 254 Scans-002678
Text: E G & G 27E JUDSON 303üb0S D 0000107 I 7 7"-*/-57 F F S e rie s FND-100;FND-100Q;FOP-1QO // Features • • • • • • Large Active Area Wide Spectral Range Low NEP High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias
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FND-100
FND-100Q
FOP-100)
FND-100
FOD-100,
FOD-100
FOD-100
FND100
FND100Q
FND10
ultrafast photodiode
ITT 254
Scans-002678
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PDF
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Untitled
Abstract: No abstract text available
Text: VTP 9412 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 2D Small area planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and
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VTP9412
3G30b0i
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PDF
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slmn
Abstract: InGaAs PIN photodiode 2600 nm
Text: J k EGgG JUDSON Extended InGaAs Photodiode Operating Notes 1.0 to 2.6 |im General Package Options J18 Series detectors are high quality extended wavelength Indium Gallium Arsenide photo diodes for use in the wavelength range from 800 to 2600 nanometers.
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J18-18I-R250U-2
J18-18I-R01M-2
J18-5I-R02M-2
3G30bQS
t35tt0
303DbDS
DnoD33E
slmn
InGaAs PIN photodiode 2600 nm
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