38C16 Search Results

2816A

Contextual Info: 38C16 38C32 High Speed CMOS Electrically Erasable PROM October 1989 Features • H igh Speed: • 35 n s M axim um A ccess Time P ow er Up/Down Protection Circuitry ■ C M OS Technology ■ Low P ower: • 350 m W JE D E C A pp ro ved B yte W ide P inout

E38C32

Contextual Info: E/38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry

Contextual Info: E/M36C16 EM36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's E/M36C16/32 are high speed 2K x 8/4K x 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

co12f

Contextual Info: ITE D SEE 3 TECHN OLO GY INC • ñinS33 0Q02bûb 1 E/M36C16 E/M36C32 High Speed CMOS Electrically Erasable PROM October 1989 ”T 4 4 - l V 2 - 7 Features Description ■ M ilitary and Extended Temperature Range • -55° C to +125aC Operation (Military

ATMEL 620

Abstract: AT28C16-20 CAT28C16A-20 28C16-15 28C16-20 28C16-25 AT28C16-15 AT28C16-25 AT28C16-45 AT28C16-55
Contextual Info: - 44 - 4-616 X -f € £ it £ CC M a -h/m ^ -h n ft I imtfstiES m TAAC max (ns) TCAC (ns) TOH max (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (mA) VIL max (V) VIH min (V) Ci max (pF) V O L / I VOL max (V/mA) V O H / I VOH min (V/mA) Co max (PF)

Contextual Info: E/M36C16 EM36C32 High Speed CMOS Electrically Erasable PROM October 1989 Description Features • SEEO's E/M36C16/32 are high speed 2Kx 8/4Kx 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.

J990

Abstract: E38C32 36C32 eeprom 2816A seeq 2816A
Contextual Info: E/38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ Military and Extended Temperature flange • -5 5 ° C to +125°C Operation Military • - 4 0 ° C to +85°C Operation (Extended) CMOS Technology

36C32

Contextual Info: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's 36C16/32 are high speed 2K x8/4K x 8 Electrically Erasable Programmable Read Only Memories, manufac­ tured using SEEO's advanced 1.25 micron CMOS proc­ ess.

eeprom 2816

Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Contextual Info: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel

2BC64

Abstract: 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom 38C16
Contextual Info: High Speed CMOS Electrically Erasable PROM O ctober 1989 Features • High Speed: • 3 5 n s M axim um A ccess Time P ow er Up/Down P rotection C ircuitry ■ C M O S Technology ■ L o w P ower: • 350 m W JE D E C A pp ro ved B yte Wide P inout • 38C 1 6:2 816 A Pin Com patible