35N120 IGBT Search Results

35N120

Abstract: 35n120 IGBT IXLH35N120A
Contextual Info: High Voltage, High speed IGBT IXLH 35N120 A VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES

35n120

Abstract: IXLH35N120A 35N120A 35n120 IGBT
Contextual Info: IXLH 35N120 A VCES High Voltage, High speed IGBT = 1200 V = 58 A = 3.6 V ^C25 V CE sat Short Circuit SOA Capability P re lim in a ry d a ta Maximum Ratings Symbol Test Conditions v CES T j = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C;1 RGE „ = 1 M fi

IXLH35N120A

Contextual Info: □IXYS High Voltage, High speed IGBT IXLH 35N120 A VC E S = 1200 V ^C 25 = 58 A = 3.6 V V C E sa t Short Circuit SOA Capability P r e lim in a r y d a ta ° V ^ i ) ÔE S ym bo l T est C o n d itio n s v CES ^ = 25 °C to 150°C V ’ CGH Tj = v* GES V GEM

Contextual Info: IXSH 35N120A High Voltage, High speed IGBT VCES = 1200 V = 70 A C25 V CE sat = 4V Short Circuit SOA Capability §J $ Maximum Ratings Symbol Test Conditions VC E S T, = 25°C to 150°C 1200 v CGR T, = 25°C to 150°C; R QE = 1 M£2 1200 V v GES v GEM Continuous

35n120

Contextual Info: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient

IXSX35N120AU1

Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Contextual Info: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power