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IXYS Corporation IXGX35N120B IGBT PT 1200V 70A PLUS247
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DigiKey	IXGX35N120B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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IXYS Corporation IXGH35N120B IGBT PT 1200V 70A TO-247AD
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DigiKey	IXGH35N120B	Tube			30	1 - 10 - 100 $8.24967 1000 $8.24967 10000 $8.24967	Buy Now
Mouser Electronics	IXGH35N120B					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	IXGH35N120B		2,668			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXGH35N120B		1,630		1	1 - 10 - 100 $17.36 1000 $17.36 10000 $16.02	Buy Now
IXYS Corporation IXSH35N120B IGBT PT 1200V 70A TO-247AD
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DigiKey	IXSH35N120B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH35N120C IGBT 1200V 70A TO-247AD
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DigiKey	IXGH35N120C	Tube			30	1 - 10 - 100 $8.24967 1000 $8.24967 10000 $8.24967	Buy Now
IXYS Corporation IXDR35N120D1 IGBT
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DigiKey	IXDR35N120D1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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35N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
35N120D1 Abstract: D-68623 IXER 35N120D1 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1	PDF
35n120au1 Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35N120AU1 35n120au1 IXSX35N120AU1 IGBT 500V 35A 35N120AU	PDF
35N120 Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	247TM 35N120BD1 728B1 35N120	PDF
IGBT 500V 35A Abstract: 35n120a Contextual Info: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20	Original	35N120A O-247 S35N12 IXSH35N120 IGBT 500V 35A 35n120a	PDF
Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C	Original	35N120B O-268 O-247	PDF
Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	35N120C O-247 O-268	PDF
IXSN35N120 Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings	OCR Scan	35N120AU1 OT-227 IXSN35N120AU1 4bflb22b IXSN35N120	PDF
Contextual Info: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	247TM 35N120BD1	PDF
IXLK35N120AU1 Contextual Info: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous	Original	35N120AU1 IXLK35N120AU1	PDF
IXLN35N120AU1 Contextual Info: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous	Original	35N120AU1 IXLN35N120AU1	PDF
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35N120AU1 150perature	PDF
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35N120AU1 O-247TM IXSX35N120AU1)	PDF
Contextual Info: IXSH 35N120B IXST 35N120B IGBT "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	35N120B 35N120B O-247 O-268 O-247)	PDF
ixgh35n120b Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C	Original	35N120B 35N120B O-268 O-247 ixgh35n120b	PDF

Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20	Original	247TM 35N120BD1 728B1	PDF
IXGX Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	35N120B 35N120BD1 O-264 247TM 728B1 IXGX	PDF
Contextual Info: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings	OCR Scan	35N120AU1 O-264	PDF
Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 35N120B VCES = 1200 V = 70 A IXGT 35N120B IC25 VCE sat = 3.3 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20	Original	35N120B O-268 O-247 O-268)	PDF
Contextual Info: Advanced Technical Information IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE sat = 3.6 V Symbol Test Conditions TO-247 AD (IXSH) Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	35N120B O-247	PDF
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	247TM 35N120BD1 728B1	PDF
Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25	OCR Scan	35N120AU1 to150 O-264AA JEDECTO-264AA 35N120AU1	PDF
DIODE 0644 Abstract: 35N120D1 IXER 35N120D1 diode RG 39 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C	Original	35N120D1 ISOPLUS247TM 247TM E153432 DIODE 0644 35N120D1 IXER 35N120D1 diode RG 39	PDF
35N120D1 Abstract: D-68623 8200T u2003 Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	35N120D1 247TM E153432 35N120D1 D-68623 8200T u2003	PDF
IXGR35N120BD1 Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300 Contextual Info: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200	Original	35N120BD1 IC110 IF110 405B2 IXGR35N120BD1 igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300	PDF

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