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    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


    Original     		PDF K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    Untitled

    Abstract: No abstract text available
    Text: K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I 160mA 155mA 150mA 190mA 185mA 180mA

    K6R1008V1C-C10

    Abstract: No abstract text available
    Text: PRELIMINARY P K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R1008V1C-C/C-L, K6R1008V1C-I/C-P 128Kx8 32-TSOP2-400CF 002MIN K6R1008V1C-C10

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2

    300mil-SOJ

    Abstract: K6R1008C1A K6R1008C1A-C12
    Text: PRELIMINARY K6R1008C1A-C, K6R1008C1A-I CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R1008C1A-C, K6R1008C1A-I 128Kx8 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA 32-TSOP2-400CF 047MAX 002MIN 300mil-SOJ K6R1008C1A K6R1008C1A-C12

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1008C1D-C/1D-I/D-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Initial release with Preliminary.


    Original     		PDF K6R1008C1D-C/1D-I/D-P 128Kx8 32-TSOP2-400CF 002MIN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4004C1C-C, K6R4004C1C-I Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4004C1C-C, K6R4004C1C-I 160mA 155mA 150mA 190mA 185mA 180mA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM644002C, KM644002CI 32-SOJ-400

    K6R1008v1c-12

    Abstract: No abstract text available
    Text: PRELIMINARY PRELIMINARY K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R1008V1C-C/C-L, K6R1008V1C-I/C-P 128Kx8 32-TSOP2-400CF 002MIN K6R1008v1c-12

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY K6R1004V1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating). Preliminary CCPCCCRCELIMINARY Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5th. 1998 Preliminary


    Original     		PDF K6R1004V1C-C 256Kx4 32-SOJ-400

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    KM681002

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002-15: 170mA KM681002 160mA 150mA KM681002J 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO KM681002B/BLSJ 32-SOJ-300 KM681002B/BLT:

    KM68V1002A

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15 KM68V1002A-17 KM68V1002A-20 KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F KM68V1002A

    Untitled

    Abstract: No abstract text available
    Text: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)


    OCR Scan     		PDF KM64V1003A KM64V1003A-12: 160mA KM64V1003A-15 KM64V1003A-17 KM64V1003A-20 KM64V1003AJ 32-SOJ-400 KM64V1003AT: 32-TSOP2-4QOF

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002-15:170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002-15 170mA KM681002 160mA KM681002-20: 150mA KM681002J 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM64B4002 1M x 4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64B4002-12 : 185 mA(Max.) KM64B4002-13:1 8 5 mA(Max.)


    OCR Scan     		PDF KM64B4002 KM64B4002-12 KM64B4002-13 KM64B4002-15: KM64B4002J: 32-SOJ-400 KM64B4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		PDF KM641003B 256Kx4 8/10/12nsafter 32-SOJ-400

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM68V1002A KM68V1002A-12 KM68V1002A-15: KM68V1002A-17 KM68V1002A-20: KM681V002AJ 32-SOJ-400 KM68V1002AT 32-TSOP -400F

    Untitled

    Abstract: No abstract text available
    Text: F re îir'in & y KM681002B/BL, KM681002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»» Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) (C M O S): 10* (Max.) 1* (Max.) - L-Ver. only


    OCR Scan     		PDF KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO 32-SO J-300

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002 -15: 170mA (Max.) KM681002-17: 160mA (Max.)


    OCR Scan     		PDF KM681002 KM681002 170mA KM681002-17: 160mA KM681002-20: 150mA KM681002J 32-SOJ-400