CHA2069-99F/00
Abstract: CHA2069
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
CHA2069-99F/00
CHA2069
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Untitled
Abstract: No abstract text available
Text: MMA-283136 28-31GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • • • Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω
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MMA-283136
28-31GHz
26dBm/tone
3000mA
28GHz
31GHz.
36dBm
MM0-651-6700
MMA283136
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AV02-0626EN
Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Text: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based
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31GHz
33dBm
35dBm
AV02-0626EN
Avago Mounted Amplifiers
ka-band bare
ka band gaas fet Package
Ka-band
1A12
30SPA0536
8A10
2.4ghz 4w
32A16
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PDF
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611 084
Abstract: No abstract text available
Text: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.
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MW-MWE003-0301
31GHz)
CKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCKCK02802
P03906
P04708
P05509
P06514
P07013
P07915
P11825
611 084
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CHA2069
Abstract: No abstract text available
Text: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20699273
8-Sep-99
CHA2069
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PDF
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microwave IC
Abstract: CHA2069RAF
Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMT leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz
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CHA2069RAF
18-31GHz
18-31GHz
DSCHA20691138
18-May-01-
18-May-01-
8-Sep-99
microwave IC
CHA2069RAF
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PDF
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CHA2069RAF
Abstract: AN0005 CHA2069 microwave IC
Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz
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CHA2069RAF
18-31GHz
18-31GHz
20ult
DSCHA2069RAF1257
14-Sept-01-
CHA2069RAF
AN0005
CHA2069
microwave IC
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PDF
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Untitled
Abstract: No abstract text available
Text: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB
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TGA2594
27-31GHz
31GHz
37dBm
25dBm/tone:
-36dBc
-45dBc
140mA,
TGA2594
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Untitled
Abstract: No abstract text available
Text: June 1997 JS9P11-AS J S 9 P 1 1 - A S 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB Compression Point GidB Power Gain at 1dB VDS= 4.5V f= 31GHz Compression Point
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OCR Scan
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JS9P11-AS
31GHz
A1203
254mm
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CHA2069-99F/00
Abstract: CHA2069
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
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Original
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CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
CHA2069-99F/00
CHA2069
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PDF
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MVB3030X103M2
Abstract: No abstract text available
Text: TGA2595 27.5 to 31GHz, 9W Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram • Frequency Range: 27.5 to 31 GHz • Pout @ Pin = 22 dBm: 39.5 dBm CW • PAE @ Pin = 22dBm: 24% CW • • • • • • 2 3 4
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TGA2595
31GHz,
22dBm:
TGA2595
MVB3030X103M2
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PDF
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Untitled
Abstract: No abstract text available
Text: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via
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Original
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CHA2069
18-31GHz
18-31GHz
20dBm
DSCHA20679273
8-Sep-99
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PDF
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Untitled
Abstract: No abstract text available
Text: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.
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MW-MWE003-0301
31GHz)
P03906
P04708
P05509
P06514
P07013
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PDF
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AN0005
Abstract: CHA2069RAF RO4003 SMD 6 PIN IC 1s
Text: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz
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CHA2069RAF
18-31GHz
18-31GHz
26GHz)
DSCHA2069RAF2169
-18-June-02-
AN0005
CHA2069RAF
RO4003
SMD 6 PIN IC 1s
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mma28-3
Abstract: No abstract text available
Text: MMA-283136-R5 28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 Features: • 32 Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω
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MMA-283136-R5
28-31GHz
26dBm/tone
3000mA
28GHz
31GHz.
10mil
4350B
MMA283136
mma28-3
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J027
Abstract: TGA49
Text: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm
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TGA4906-SM
TGA4906-SM
J027
TGA49
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TGA4512-SM
Abstract: RO4003 Ka-band
Text: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB
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TGA4512-SM
24dBm
TGA4512-SM
RO4003
Ka-band
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3A001
Abstract: Ka-band free circuit diagram of rf id
Text: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output
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TGA2575
TGA2575
32GHz
38GHz,
36dBm
3A001
Ka-band
free circuit diagram of rf id
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amplifier circuit diagram 10000 watt
Abstract: No abstract text available
Text: HMC943LP5E v02.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm
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HMC943LP5E
HMC943LP5E
amplifier circuit diagram 10000 watt
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AN0017
Abstract: CHA3694-QDG MO-220
Text: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications,
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CHA3694-QDG
31-40GHz
A3694
CHA3694-QDG
31-40GHz
25dBm
24L-QFN4x4
DSCHA3694-QDG8294
AN0017
MO-220
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PDF
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TGA4513
Abstract: No abstract text available
Text: Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifier TGA4513 Key Features • • • • • • • • • Primary Applications Measured Data • Satellite Ground Terminal 25 • Point to Point Radio 20 • Point to Multi Point Radio
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TGA4513
200oC.
TGA4513
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148235
Abstract: A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237
Text: Agilent AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Features • Wide frequency range: 16 - 32 GHz • High gain: 22 dB • Low 50 Ω Noise Figure: 2.6 dB Chip Size: 1900 x 800 mm 74.8 x 31.5 mils Chip Size Tolerance: ± 10mm (± 0.4 mils) Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)
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AMMC-6231
AMMC-6231
AMMC-6231-W10
AMMC-6231-W50
5989-1957EN
148235
A004R
AMMC-6231-W10
AMMC-6231-W50
89451
170267
74237
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PDF
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63387
Abstract: 147709 51952 148235 A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 60673 82291
Text: AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)
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AMMC-6231
AMMC-6231
AMMC-6231-W10
AMMC-6231-W50
5989-3942EN
AV02-1288EN
63387
147709
51952
148235
A004R
AMMC-6231-W10
AMMC-6231-W50
60673
82291
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 30 GHz 5-Bit Phase Shifter TGP2100 Key Features and Performance • • • • • • Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25µm pHEMT 3MI Technology Chip dimensions:
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TGP2100
28GHz
29GHz
30GHz
31GHz
32GHz
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