31GHZ Search Results

CHA2069-99F/00

Abstract: CHA2069
Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: MMA-283136 28-31GHz 4W MMIC Power Amplifier Data Sheet November, 2012 Features: • • • • • • • • • Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω

AV02-0626EN

Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Contextual Info: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based

611 084

Contextual Info: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.

CHA2069

Contextual Info: CHA2069 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

microwave IC

Abstract: CHA2069RAF
Contextual Info: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMT leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz

CHA2069RAF

Abstract: AN0005 CHA2069 microwave IC
Contextual Info: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz

Contextual Info: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features          Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB

Contextual Info: June 1997 JS9P11-AS J S 9 P 1 1 - A S 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta= 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB Compression Point GidB Power Gain at 1dB VDS= 4.5V f= 31GHz Compression Point

CHA2069-99F/00

Abstract: CHA2069
Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via

MVB3030X103M2

Contextual Info: TGA2595 27.5 to 31GHz, 9W Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram • Frequency Range: 27.5 to 31 GHz • Pout @ Pin = 22 dBm: 39.5 dBm CW • PAE @ Pin = 22dBm: 24% CW • • • • • • 2 3 4

Contextual Info: CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: MW-MWE003-0301 Drop-in circulators / isolators Carrier type isolators 2.7 to 31GHz Specifications Handling Power Operating temp. Frequency Insertion Reflection Carrier Document No. Isolation V.S.W.R. power absorption Ioss range range Ioss (dB)min. (50 Ω)max.

AN0005

Abstract: CHA2069RAF RO4003 SMD 6 PIN IC 1s
Contextual Info: CHA2069RAF 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a three-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 18-31GHz

mma28-3

Contextual Info: MMA-283136-R5 28-31GHz 4W MMIC Power Amplifier Data Sheet October, 2012 Features: •        32 Frequency Range: 28 - 31 GHz P1dB: +36 dBm IM3 Level: -35 dBc @Po=26dBm/tone Gain: 22 dB Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω

J027

Abstract: TGA49
Contextual Info: TGA4906-SM 4 Watt Ka-Band Power HPA Applications Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 23 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical Package Dimensions: 5.0 x 5.0 x 1.2 mm

TGA4512-SM

Abstract: RO4003 Ka-band
Contextual Info: TGA4512-SM Ka-Band Driver Amplifier Applications • • Ka-band VSAT Ground Terminal Point-to-Point Radio QFN 3x3mm 12L Product Features • • • • • • • Functional Block Diagram 12 Frequency Range: 28 – 32 GHz Power: 17 dBm Psat, 16 dBm P1dB

3A001

Abstract: Ka-band free circuit diagram of rf id
Contextual Info: TGA2575 Ka-Band 4 Watt Power Amplifier Applications • • Electronic warfare Communications Product Features • • • • • • • Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 36 dBm Psat PAE: 22% Gain: 18 dB Return Loss: 12 dB input, 12 dB output

amplifier circuit diagram 10000 watt

Contextual Info: HMC943LP5E v02.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm

AN0017

Abstract: CHA3694-QDG MO-220
Contextual Info: CHA3694-QDG RoHS COMPLIANT 31-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description UMS A3694 YYWW The CHA3694-QDG is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications,

TGA4513

Contextual Info: Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifier TGA4513 Key Features • • • • • • • • • Primary Applications Measured Data • Satellite Ground Terminal 25 • Point to Point Radio 20 • Point to Multi Point Radio

148235

Abstract: A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237
Contextual Info: Agilent AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Features • Wide frequency range: 16 - 32 GHz • High gain: 22 dB • Low 50 Ω Noise Figure: 2.6 dB Chip Size: 1900 x 800 mm 74.8 x 31.5 mils Chip Size Tolerance: ± 10mm (± 0.4 mils) Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)

63387

Abstract: 147709 51952 148235 A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 60673 82291
Contextual Info: AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)

Contextual Info: Product Data Sheet August 5, 2008 30 GHz 5-Bit Phase Shifter TGP2100 Key Features and Performance • • • • • • Positive Control Voltage Single-Ended Logic CMOS Compatible Frequency Range: 28 - 32 GHz 0.25µm pHEMT 3MI Technology Chip dimensions: