300 V 2 A MOSFET Search Results
300 V 2 A MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK422G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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300 V 2 A MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IXGH40N30
Abstract: high current igbt
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OCR Scan |
IXGH40N30BD1 O-247 IXGH40N30 high current igbt | |
starter/generator
Abstract: D-68623 mosfet Vds 50 Vgsth
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300-0055P Qg03-0, 300-0055P starter/generator D-68623 mosfet Vds 50 Vgsth | |
75NF30
Abstract: stw75nf30 JESD97
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STW75NF30 O-247 75NF30 stw75nf30 JESD97 | |
Contextual Info: ÏXYS HiPerFAST IGBT IXGH20N30 VCES C25 VCE sat typ t fi(typ) Symbol Test Conditions V T j = 2 5 °C to 150°C Maximum Ratings 300 V 300 V Continuous +20 V Transient 130 V T,J = 2 5 °C to 150J C; FLO 1 M fi Tc -2 5 C 40 A ^C9G T c = 90° C 20 A ^CM T c = 25° C, 1 ms |
OCR Scan |
IXGH20N30 O-247 | |
Contextual Info: FMM 300-0055P ID25 = 300 A = 55 V VDSS Ω RDSon typ. = 2.7 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data T1 5 4 1 1 T2 2 5 Features Symbol Conditions VDSS TVJ = 25°C to TVJmax Maximum Ratings VGS 55 V ±20 V ID25 ID90 |
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300-0055P | |
Contextual Info: L7987L 61 V 2 A asynchronous step-down switching regulator with adjustable current limitation Datasheet - preliminary data Description HTSSOP16 RTH = 40 °C/W Features • 2 A DC output current 4.5 V to 61 V operating input voltage RDS,ON = 300 m typ. |
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L7987L HTSSOP16 L7987L DocID026362 | |
Contextual Info: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S |
OCR Scan |
2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-OO S-02464-- 25-Oct-00 | |
DSEE29-06CC
Abstract: 486 smps
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DSEE29-06CC ISOPLUS220TM E153432 9-03A DS98815A ISOPLUS220 728B1 065B1 DSEE29-06CC 486 smps | |
si6306
Abstract: DPG30P300PJ
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DSEE29-06CC ISOPLUS220TM E153432 9-03A 20080317a ISOPLUS220 728B1 065B1 si6306 DPG30P300PJ | |
Contextual Info: TAIW AN s TSM2N70Û2 SEMICONDUCTOR 60V N-Channei MOSFET bl RoHS COMPLIANCE SOT-23 PRODUCT SUM M ARY P in D e fin itio n : 1. Gate V DS V 2 . S o u rc e 3 . D ra in 1 60 2 Features RDS(on){Q) I d (m A ) 7.5 @ Vas - 10V 300 7.5 @ V Gs= 4.5V 200 Block Diagram |
OCR Scan |
TSM2N70 OT-23 TSM2N7002CX OT-23 | |
isoplus mosfet
Abstract: 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator
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300-0055P isoplus mosfet 12V 200A Relay DA QG solar inverter solar inverter circuit starter/generator | |
Contextual Info: SIEMENS IL420 600 V TRIAC DRIVER OPTOCOUPLER FEATURES a • • • • High Input Sensitivity 1 ^ 2 mA Blocking Voltage, 600 V 300 mA On-State Current High Static dv/dt 10,000 V t\a Inverse Parallel SCR« Provide Commutating dv/dt >2K V/|i* • Very Low Leakage <10 \iA |
OCR Scan |
IL420 E52744 lF/iFT25 IL420 | |
ic 501
Abstract: 1l410 triac triac 1f 1L410 OPTOCOUPLER trigger thyristor scr triac varistor
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OCR Scan |
E52744 -X001 IL410 IL410 IL41Q. VS05K250) ic 501 1l410 triac triac 1f 1L410 OPTOCOUPLER trigger thyristor scr triac varistor | |
hipsContextual Info: Chips and DCB Ceramic Substrates Power Sem iconductor Chips IXYS has a w ide range of chips for many electronic circuits. V CES IGBT Chips v CE aat lc G series, Low VCE(aat) type G series, High Speed type 300 -1 2 0 0 V 10- 60 A 1 .6 -3 .5 V 3 0 0 - 1200 V |
OCR Scan |
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Contextual Info: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(m) -20 ID (A) 140 @ VGS = -4.5V -2.2 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram |
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TSM3911D OT-26 TSM3911DCX6 | |
p-channel mosfet
Abstract: Dual P-Channel MOSFET P-Channel MOSFET code L 1A ultra low igss pA TSM3911D
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TSM3911D OT-26 TSM3911DCX6 p-channel mosfet Dual P-Channel MOSFET P-Channel MOSFET code L 1A ultra low igss pA TSM3911D | |
schematic diagram 72v to 12v converter
Abstract: T1595 LM4041C1M3 LEP-9080
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Si9123 500-kHz 100-ms Si9123 half-briR0520 30BQ040 EPC19 Si4886DY MOC207 LM7301 schematic diagram 72v to 12v converter T1595 LM4041C1M3 LEP-9080 | |
Marking d12Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300 |
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TSM2N7002K OT-23 OT-323 TSM2N7002KCX TSM2N7002KCU Marking d12 | |
Contextual Info: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc ISOPLUS220TM ISOPLUS220TM VRRM V V 600 300 Type DSEE29-06CC 1 2 3 G Symbol Conditions Maximum Ratings TC = 115°C; rectangular, d = 0.5 |
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DSEE29-06CC ISOPLUS220TM DS98815 ISOLPLUS220LV 728B1 065B1 123B1 | |
LM4041C1M3
Abstract: LM4041C1M3-1
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Si9123 500-kHz 100-ms Si9123 half-briR0520 30BQ040 EPC19 Si4886DY MOC207 LM7301 LM4041C1M3 LM4041C1M3-1 | |
STD3NB30Contextual Info: STD3NB30 N - CHANNEL 300V - 1.8Ω - 3.2A - DPAK PowerMESH MOSFET TYPE ST D3NB30 • ■ ■ ■ ■ ■ V DSS R DS on ID 300 V < 2Ω 3.2 A TYPICAL RDS(on) =1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
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STD3NB30 D3NB30 STD3NB30 | |
Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300 |
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TSM2N7002K OT-23 OT-323 TSM2N7002KCX TSM2N7002KCU | |
Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C |
OCR Scan |
IXFH40N30Q IXFT40N30Q O-268 | |
capacitor .01mf 100v
Abstract: capacitor 0.1MF 1KV 4000 watts power amplifier circuit diagram AD8011 AD8011AN AD8011AR AD8011AR-REEL AD8011AR-REEL7 AD8011-EB AD9617
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AD8011* AD8011 capacitor .01mf 100v capacitor 0.1MF 1KV 4000 watts power amplifier circuit diagram AD8011 AD8011AN AD8011AR AD8011AR-REEL AD8011AR-REEL7 AD8011-EB AD9617 |