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IXYS Corporation IXFT40N30Q MOSFET N-CH 300V 40A TO268
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DigiKey	IXFT40N30Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFT40N30Q-TR MOSFET N-CH 300V 40A TO268
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DigiKey	IXFT40N30Q-TR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFT40N30QTR HIPERFET POWER MOSFET Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268
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ComSIT USA	IXFT40N30QTR		702			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFT40N30Q Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFT40N30Q		IXYS	300V HiPerFET power MOSFET Q-class		Original	PDF
IXFT40N30Q		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 40A TO-268		Original	PDF
IXFT40N30Q TR		IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 40A TO268		Original	PDF

IXFT40N30Q Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: □ IXYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q V D S S 300 40 85 < 200 = ^ D 2 5 D Q Class D S o n N-Channel Enhancement Mode Avalanche Rated Highdv/dt, LowQg t r r V A mQ ns Preliminary data Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C	OCR Scan	IXFH40N30Q IXFT40N30Q O-268	PDF
IXFH40N30 Contextual Info: nixYS HiPerFET Power MOSFETs IXFH40N30Q IXFT40N30Q Q Class VDSS = 300 V U = 40 A = 85 m û < 200 ns r d s «o„, trr N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data Symbol Test Conditions V pss Tj =25°Cto150°C T,J = 25°C to 150°C; R_	OCR Scan	IXFH40N30Q IXFT40N30Q Cto150 IXFH40N30	PDF
IXFH40N30 Contextual Info: HiPerFETTM Power MOSFETs IXFH40N30Q IXFT40N30Q VDSS ID25 Q Class RDS on trr N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg = 300 V = 40 A = 85 mW £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	IXFH40N30Q IXFT40N30Q O-268 O-247 O-268 IXFH40N30	PDF
Contextual Info: Not for New Designs HiPerFETTM Power MOSFETs Q-Class VDSS ID25 IXFH40N30Q IXFT40N30Q = 300V = 40A Ω ≤ 85mΩ RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFH40N30Q IXFT40N30Q O-268 300as 40N30Q 3-22-11-A	PDF
IXFH40N30Q Abstract: IXYS 40N30Q Contextual Info: Not for New Designs IXFH40N30Q IXFT40N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 = 300V = 40A ≤ 85mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-268 (IXFT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFH40N30Q IXFT40N30Q O-268 O-247 Dra90 40N30Q 3-22-11-A IXYS 40N30Q	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF