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    30 AMP NPN TRANSISTOR Search Results

    30 AMP NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    30 AMP NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3501

    Abstract: 2N5682 CP195
    Text: PROCESS CP195 Central Small Signal Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 8.0 x 8.0 MILS Emitter Bonding Pad Area 7.6 x 7.6 MILS


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    PDF CP195 2N5682 2N3501 2N3501 2N5682 CP195

    2N5682

    Abstract: AL 2001 2N3501 CP195
    Text: PROCESS CP195 Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 8.0 x 8.0 MILS Emitter Bonding Pad Area 7.6 x 7.6 MILS Top Side Metalization


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    PDF CP195 2N5682 2N3501 2N5682 AL 2001 2N3501 CP195

    Untitled

    Abstract: No abstract text available
    Text: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT


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    PDF 2N5330 JEDECTO-61 SPT5330

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE ZTX449 NPN SILICON PLANAR FXT449 MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF ZTX449 FXT449 ZTX449 100mA* 200mA* 500mA, 100MHz

    ARC-182

    Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
    Text: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios


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    PDF ARC-182 37HERWISE transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182

    NPN Transistor TO92 40V 200mA

    Abstract: FXT449 ZTX449 DSA0037526
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT449 ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    PDF FXT449 ZTX449 100mA* 200mA* 500mA, 100MHz NPN Transistor TO92 40V 200mA FXT449 DSA0037526

    2N3700

    Abstract: No abstract text available
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-040 FAX: (617) 924-1235 2N3700 Features 140 Volts 1 Amp • Meets MIL-S-19500/391 • Collector-Base Voltage 140V • Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage


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    PDF 2N3700 MIL-S-19500/391 200Hz) MSCO279A 2N3700

    teledyne crystalonics

    Abstract: 2N5330 2N5329 LIN5410
    Text: m 5ÖE D TELEDYNE COMPONENTS ÖTlTtiQE QQQtiSBÖ 4 • T -J * ''/ NPN POWER TRANSISTORS 20 & 30 AMP GEOMETRY 511 • le to 30 Amp • Fast Switching MAXIMUM RATINGS PARAMETER SYMBOL Collector-Emitter Voltaae Collector-Base Vottaae Emtttef-Base Voltaa Collector Current-Continuous


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    PDF 2N5329 2N5330 200-C 10mHz 10ADC LIN5410 teledyne crystalonics LIN5410

    transistor 2TH

    Abstract: No abstract text available
    Text: KSC838 NPN EPITAXIAL SILICON TRANSISTOR FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product fT-250MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO VeOO lc Pc Tj Tstg 35 30 4 30 250 150 -5 5 -1 5 0


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    PDF KSC838 fT-250MHz transistor 2TH

    D40CI

    Abstract: TQ-202 D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734
    Text: VERY HIGH GAIN D40C Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS .5 AMP, 6.25 WATTS Designed for driver, regulator, touch switch, I.C. driver, audio output, relay substitute, oscillator, servo-arnplifier, and capacitor multiplier applications. NPN COLLECTOR


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    PDF TQ-202 TQ-202 D40CI D40C7 D40C1 800 watts audio amp D40C D40C4 16 amp npn darlington power transistors 30734

    2N3771 power circuit

    Abstract: 2N3771 MBD5300 MSD6100
    Text: HIGH POWER 2N3771 NPN POWER TRANSISTORS 40 VOLTS 30 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch­ ing applications. Features: • Forward biased second breakdown current capability


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    PDF 2N3771 T0-204AA 2N3771 power circuit 2N3771 MBD5300 MSD6100

    D40K2

    Abstract: d40k1 D40K D40K3 D41K
    Text: VERY HIGH GAIN D40K Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS 2 AMP, 10 WATTS COMPLEMENTARY TO THE D41K SERIES Applications: • • • • • • • • • NPN COLLECTOR Driver Regulator Touch Switch I.C. Driver Capacitor Multiplier Audio Output


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    PDF T0-202 O-202 D40K1 D40K2 300ms D40K D40K3 D41K

    ECG245

    Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
    Text: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


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    PDF ECG229 ECG232 ECG233 ECG234 ECG23S O-218) ECG257 O-127 ECG258 ECG257) ECG245 DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain darlington 40 A ECG238 ECG191

    transistor bl p75

    Abstract: transistor k105 K105 transistor D44VM D44VM1 D44VM10 D44VM4 D44VM7 D44VMI D44* npn
    Text: VERY HIGH SPEEED D44VM Series NPN POWER TRANSISTORS 30 - 80 VOLTS 8 AMP, 50 WATTS COMPLEMENTARY TO THE D45VM SERIES The D44VM is a NPN power transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where


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    PDF D45VM D44VM t0-220ab 200/1H 0t230b transistor bl p75 transistor k105 K105 transistor D44VM1 D44VM10 D44VM4 D44VM7 D44VMI D44* npn

    NT 407 F TRANSISTOR

    Abstract: D44C3 D44C2 D44C4 D44* general electric npn to-220 D44C D44C1 D44C7 D44C10 D45C
    Text: D44C Series NPN POWER TRANSISTORS 30-80 VOLTS 4 AMP, 30 WATTS COMPLEMENTARY TO THE D45C SERIES T he General Electric D44C is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


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    PDF TQ-220AB T0-220-AB 300ms NT 407 F TRANSISTOR D44C3 D44C2 D44C4 D44* general electric npn to-220 D44C D44C1 D44C7 D44C10 D45C

    D44VH4

    Abstract: L391 D44VH D44VH1 D44VH10 D44VH7 D45VH
    Text: VERY HIGH SPEED D44VH Series NPN POWER TRANSISTORS 30-80 VOLTS 15 AMP, 83 WATTS COMPLEMENTARY TO THE D45VH SERIES The D44VH is an NPN power transistor especial ly designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where


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    PDF D45VH D44VH T0-220-AB D44VH4 L391 D44VH1 D44VH10 D44VH7

    lN914

    Abstract: TIP29 TIP29A TIP29B TIP29C TIP30
    Text: TIP 29 Series NPN POWER TRANSISTORS 40-100 VOLTS 1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP30 SERIES The T IP 29 Series pow er transistors are designed for use in general purpose am plifier and switching applications. Features: • Designed for complementary use with TIP 30 series


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    PDF TIP30 TIP29 O-220-A8 TIP29A TIP29B TIP29C lN914

    2N6925

    Abstract: TO3 package 2n6924
    Text: O General Semiconductor Industries, Inc. * NPN TRANSISTOR CHIP " Typical Device Types: 2N6924, 2N6925 37 " 35 AMP Bonding Pad Areas Fast Switching Base 1 135x28 mils Emitter (1)49 x 30 mils Typical Switching Front Metallization: Aluminum Back Metallization:


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    PDF 2N6924, 2N6925 135x28 20nsec 90nsec 1300nsec 150nsec 50mAckage) 2N6925 TO3 package 2n6924

    tu235

    Abstract: No abstract text available
    Text: SURFACE-MOUNT D72Y1.5D1.2 NPN POWER DARLINGTON TRANSISTORS 30 VOLTS 1.5 AMP, 10 WATTS Designed for pulse motor drive, hammer drive applications, switching applications, power amplifier applications. Features: • High DC Current Gain : hFE = 4000 Min. (VcE = 2V, lc = 150mA)


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    PDF D72Y1 150mA) tu235

    2N6715

    Abstract: 2N6714 2N6726 92GU01
    Text: 92GU01.01A 2N6714.15 NPN POWER TRANSISTORS 30-40 VOLTS 2 AMP, 1.2 WATTS COMPLEMENTARY TO THE 2N6726, 27/92GU51, 51A SERIES Applications: • Class “B ” audio outputs/drivers • General purpose switching and lamp drive in industrial and automotive circuits.


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    PDF 2N6726, 27/92GU51, 92GU01 2N6714 O-237 2N6714 2N6715 2N6726

    70570

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SERT 93 FEATURES * * 30 Volt VCE0 1 Amp continuous current * Ptot= 1 Watt REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Em itter Voltage VALUE UNIT


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    PDF ZTX449 CICI7DS76 GG1D354 117DS7Ã 001G35S 70570

    D71Y1.5T1

    Abstract: D70Y1.5T1
    Text: SURFACE-MOUNT D70Y1.5T1 NPN POWER TRANSISTORS 30 VOLTS 1.5 AMP, 500 mWATTS Designed for audio frequency amplifier applications. Features: • Suitable for output stage of 3-W att amplifier • P d =1 ~ 2W Mounted on ceramic substrate • Small flat package


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    PDF D70Y1 D71Y1 OT-89 250mm2 D71Y1.5T1 D70Y1.5T1

    T0220IS

    Abstract: LC-485 D55A7D D55A D54A7D
    Text: D54A7D NPN POWER DARLINGTON TRANSISTORS 100 VOLTS 7 AMP, 30 WATTS Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High D C Current Gain: hFE = 2000 Min. (at V q e = 3V, lc =3A) CASE STYLE TO-220IS


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    PDF D54A7D D55A7D TQ-220 T0-220IS T0-220IS T0220IS LC-485 D55A7D D55A D54A7D

    D4001

    Abstract: 14007 D40D7...8 D40D D40D1 D40D2 D40D4 D40D5 D40D7 D41D
    Text: NPN POWER TRANSISTORS D40D Series 30 - 60 VOLTS 1 AMP, 6.25 WATTS COMPLEMENTARY TO THE D41D SERIES The General Electric D40D is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


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    PDF T0-202 T0-202 300ms D4001 14007 D40D7...8 D40D D40D1 D40D2 D40D4 D40D5 D40D7 D41D