2T2 TRANSISTOR Search Results

Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

Contextual Info: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.

transistor 667

Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Contextual Info: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2

D7821

Abstract: PD78P218 1NTC0 83YL-9181A D78218 p54a TI427 1NTC D78218A P218A
Contextual Info: • L.427525 0043103 2T2 * N E C E NEC NEC Electronics Inc. pPD78218A Family pPD78217A/218A/P218A 8-Bit, K-Series Microcontrollers With A/D Converter, Real-Time Output Ports _ J u ly 1993 Description ^ Pin com patible w ith ¿/PD78214 family The ¡uPD78217A, /JPD78218A, and /JPD78P218A are

etg36 040d

Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
Contextual Info: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.

2SD1071

Abstract: 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916 ETG36-040C
Contextual Info: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.

Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

BCX19

Abstract: lem HA BCX20
Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS

STP19N05L

Abstract: STP19N06L
Contextual Info: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

PHN105

Contextual Info: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor P H N 105 FEATURES DESCRIPTION • High speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic S 0 8 SOT96-1 package. • No secondary breakdown

3.5b zener diode

Abstract: diode so3 NDB6050L NDP6050L
Contextual Info: National April 1996 S e m i c o n d u c t o r " N D P 6050L/ NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using

ODD1173

Abstract: FF200R06KF2 FF200R06KF FF500 15fis Scans-0031044 FF200R06
Contextual Info: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 0,16 DC, pro Zweig / per arm 0,03 pro B a u ste in /p e r module 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties V CES Maximum rated values

FZJ 125

Abstract: transistor z5t STV10NA40 fzj 155
Contextual Info: SCS-THOMSON M œ m iO T is lin e i S T V 10NA 40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STV10NA40 • . . . . . . Vdss RüS on Id 500 V < 0.55 n 10 A TYPICAL RDS(on) = 0.46 D ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: FF 200 R 06 KF 2 Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,08 DC, pro Zweig / per arm 0,16 pro B au stein / per module 0,03 RthCK pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties

Contextual Info: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.

Xr 1075

Abstract: BFR90A BFG92A MICROWAVE TRANSISTOR MBC964 2029 transistors up/xr+2320
Contextual Info: Philips Semiconductors FEATURES Product specification PINNING • High power gain PIN • Low noise figure DESCRIPTION BFG92A Fig.1 Code: P8 • Gold metallization ensures excellent reliability. DESCRIPTION The BFG92 is a silicon NPN transistor in a 4-pin, dual-emitter plastic

TC74HC4538P

Abstract: 2T2 transistor
Contextual Info: TC74HC4538P/F TC 7 4 H C 4 5 3 8 P /F DUAL R E T R IG G E R A B LE MONOSTABLE M U LTIV IBR A TO R The TC74HC4538 is a high speed CMOS MONOSTABLE MULTIVIBRATOR fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

BA4510F

Contextual Info: BA451 OF Dual, high slew rate, operational amplifiers BA4510F is a monolithic IC that consists of two high slew-rate operational amplifiers. Features Dimensions Units : mm • • available in SOP8 package wide power supply voltage range (single power supply, 2 V ~ 7 V; dual

4538A

Abstract: Diode dx 2A 74HC4538A
Contextual Info: TOSHIBA TC74HC4538AP/AF/AFN Dual Monostable Multivibrator The TC74HC 4538A is a high speed CMOS MONOSTABLE MULTIVIBRATOR fa b rica te d w ith silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

IC 4538

Abstract: 4538 ic 4538 equivalent CD 4538 PIN DIAGRAM IC CD 4538 74HC4538 CMOS 4538 series circuits for 4538 4538M cmos 4538
Contextual Info: r z 7 Ä 7# S G S -T H O M S O N M 0 » d H I O T « i M74H C 4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR HIGHSPEED = 25 ns (TYP. AT Vcc = 5 V LOW POWER DISSIPATION STANDBYSTATE Ice = 4|iA (MAX.) ATT a = 25 "C ACTIVE STATE Ice = 200 jjA (TYP.) AT Vcc = 5 V

T3D 67 diode

Abstract: Diode T3D 64 T3D 64 diode Diode T3D 54 T3D 77
Contextual Info: f Z 7 S G S -T H O M S O N Ä 7 # ¡ i» œ m O T o « S M 54HC4538 M 74HC4538 % DUAL RETRIGGERABLE MONOSTABLE M ULTIVIBRATOR • HIGHSPEED tpD = 25 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION STANDBY STATE lcc = 4|iA (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 |iA (TYP.) AT Vcc = 5 V

C4538

Abstract: 2t1-2t2 74hci 74HC4538 4538B 54HC 74HC M54HC123 M54HC4538 M74HC123
Contextual Info: M 54HC4538 M 74H C 4538 / T T S G S -T H O M S O N * 7 # . rao jä inieT[is«MKg§ DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR i HIGH SPEED tpD = 27 ns TYP at VCc = 5V i LOW POWER DISSIPATION STANDBY STATE lCC = 4 ¿¿A (MAX.) at TA = 25°C ACTIVE STATE lcc = 200 /tA (TYP) at VCc = 5V

4538B

Abstract: Transistor 2Tz 2T2 transistor 74HC4538 M54HC4538 M54HC4538F1R M74HC4538 M74HC4538B1R M74HC4538C1R M74HC4538M1R
Contextual Info: r z r z S G S -T H O M S O N M54HC4538 ^ 7 # MommiOTTECTOOS_ M74HC4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR HIGH SPEED = 25 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION STANDBY STATE Ice = 4 ^A (MAX.) ATT a = 25 'C ACTIVE STATE Ice = 200 nA (TYP.) AT Vcc = 5 V