Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK346 Search Results

    SF Impression Pixel

    2SK346 Price and Stock

    Toshiba America Electronic Components 2SK3466(TE24L,Q)

    MOSFET N-CH 500V 5A 4TFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3466(TE24L,Q) Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SK3462(TE16L1,NQ)

    MOSFET N-CH 250V 3A PW-MOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3462(TE16L1,NQ) Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Quest Components 2SK3462(TE16L1,NQ) 1,093
    • 1 $1.04
    • 10 $1.04
    • 100 $0.52
    • 1000 $0.416
    • 10000 $0.416
    		Buy Now

    Fuji Electric Co Ltd 2SK3469-01MR-F82

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK3469-01MR-F82 1,600
    • 1 $9.75
    • 10 $9.75
    • 100 $9.75
    • 1000 $4.875
    • 10000 $4.875
    		Buy Now

    Others 2SK3469-01MR

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange 2SK3469-01MR 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2SK346 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK346 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK346 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK346 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK346 Unknown FET Data Book Scan PDF
    2SK3460 Sanken Electric N-Channel MOSFET Original PDF
    2SK3460 Sanken Electric TRANS MOSFET N-CH 150V 18A 3TO-220F Original PDF
    2SK3460 Sanken Electric MOSFET Selection Guide Original PDF
    2SK3461 Renesas Technology Original PDF
    2SK3461(L) Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    2SK3461L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3461L Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3461(S) Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    2SK3461S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3461S Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3462 Toshiba FETs - Nch 150V Original PDF
    2SK3462 Toshiba Original PDF
    2SK3462 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3462(TE16L1,NQ) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 3A PW-MOLD Original PDF
    2SK3466 Toshiba Chopper Regulator Original PDF
    2SK3466 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK346 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3467

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode


    Original     		PDF 2SK3467 O-263 2SK3467

    2sk3469

    Abstract: 2SK3469-01MR *k3469
    Text: 2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3469-01MR MOSFET200303 O-220F 2sk3469 2SK3469-01MR *k3469

    2SK3461

    Abstract: Hitachi DSA0076
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-944 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate


    Original     		PDF 2SK3461 ADE-208-944 Hitachi DSA0076

    Untitled

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		PDF 2SK3462

    2SK3460 equivalent

    Abstract: 2SK3460 FM20
    Text: 2SK3460 Absolute Maximum Ratings Ta = 25ºC Ratings Unit Symbol VDSS 150 V V(BR) DSS min 150 +20, –10 V ID ±18 A VTH 1.0 ±72 A Re (yfs) 13 EAS *2 35 (Tc = 25ºC) W Ratings typ I GSS VGSS PD I DSS RDS(on) (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V


    Original     		PDF 2SK3460 FM100 2SK3460 equivalent 2SK3460 FM20

    2SK3466

    Abstract: k3466
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466 k3466

    2Sk3462

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • • • • • 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)


    Original     		PDF 2SK3462 2Sk3462

    Untitled

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    k3462

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		PDF 2SK3462 k3462

    Untitled

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    k3462

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS


    Original     		PDF 2SK3462 20controlled k3462

    2SK3466

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466

    K346

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 K346

    2SK3466

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466

    2SK3462

    Abstract: K3462
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		PDF 2SK3462 2SK3462 K3462

    2SK3468-01

    Abstract: No abstract text available
    Text: 2SK3468-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3468-01 O-220AB 2SK3468-01

    M2SK3467

    Abstract: d1499 2SK3467 2SK3467-Z MP-25 MP-25Z
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3467 N チャネル パワーMOS FET スイッチング用 工業用 2SK3467 は，N チャネル MOS FET でオン抵抗が低く，スイッチング特性が優れており，同期整流方式 DC/DC コンバー


    Original     		PDF 2SK3467 2SK3467 O-220AB 2SK3467-Z O-220SMDMP-25Z O-220SMD D14991JJ1V0DS00 M2SK3467 d1499 2SK3467-Z MP-25 MP-25Z

    2SK3466

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466

    2SK3466

    Abstract: transistor MJ 122
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) · High forward transfer admittance: ïYfsï = 4.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466 2SK3466 transistor MJ 122

    Untitled

    Abstract: No abstract text available
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SK3461 REJ03G1102-0300 PRSS0004AE-A PRSS0004AE-B

    tc 122 25 5

    Abstract: 2SK3466
    Text: 2SK3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		PDF 2SK3466 20070701-JA tc 122 25 5 2SK3466

    k3462

    Abstract: 2SK3462 K346
    Text: 2SK3462 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3462 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 5.2 ± 0. 2 • 4 V 駆動です。 • オン抵抗が低い。


    Original     		PDF 2SK3462 SC-64 k3462 2SK3462 K346

    Untitled

    Abstract: No abstract text available
    Text: 2SK3468-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3468-01 MOSFET200303 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SK3461 REJ03G1102-0300 PRSS0004AE-A PRSS0004AE-B