2SK2388
Abstract: 1B10B N3I3
Text: TOSHIBA Discrete Semiconductors 2SK 2388 Unit in mm Silicon N Channel MOS Type c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-DC Converter and Motor Drive Applications. • • • • Low Drain-Source ON Resistance: fSs{ON)= 1-8£2(Typ.)
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2SK2388
0DE174T
0D2175D
1B10B
N3I3
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2SK2473-01
Abstract: diode 300v 20a
Text: F U JI 2SK 2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0 ,2 Q 20A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof 4.5 r > Applications
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2SK2473-01
diode 300v 20a
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Transistor D 2599
Abstract: No abstract text available
Text: TO SH IB A 2SK 2599 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2599 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1. Low Drain-Sorce ON Resistance : R d S(ON = 2.9H (Typ.)
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2SK2599
100//A
Transistor D 2599
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A2137
Abstract: No abstract text available
Text: 2SK 1 0 8 8-M R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ -eatures • h igh current • Law on-resistance • No secondary breakdown • L dw driving power • high forward Transconductance ■Applications • Motor controllers
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2SK1088-MR
EaT130
A2137
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power M O S FET TYPE NAME 2SK 2807-01 L,S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co.,Ltd. CHECKED ‘ 1/l nY 0257-R -004a ± 1.Scope This specifies Fuji Power MOSFET 2SK2807-01 L,S
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2SK2807-01L,
2SK2807-01S
0257-R
-004a
2SK2807-01
0257-R-003a
02S7-R-003a
R-003a
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2SK2523-01
Abstract: 2SK2525-01
Text: SPECIFICATION DEVICE NAME : TYPE NAME : P o w e r MOSFET 2SK 2 5 2 3- 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Füji Electric C a jid 1/11 Y 0257-R-004a 1 . Scope This specifies Fuji power MOSFET
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2SK2523-01
0257-R-004a
T0-220
0257-R-003a
2SK2523-01
2SK2525-01
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2SK1201
Abstract: LB205
Text: MMTbEDS QD13E37 TÔT « H i m 2SK 1201 HITACHI/ OPTOELECTRONICS blE D S IL IC O N N -C H A N N E L M O S FET -, HIGH SPEED POWER SWITCHING O O c" a :! > • FEATURES LÌ • • • • • -4“ - * — r / , — ± - Low On-Resistance High Speed Switching
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2SK1201
QD13E37
2SK1201
00132M0
LB205
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2SK1096-MR
Abstract: No abstract text available
Text: 2SK 1096-M R FUJI P O W ER M O S-F ET l\M HAI\ll\IEL S IL IC O N P O W E R M O S - F E T F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■ ¿applications
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2SK1096-MR
Tc-25
2SK1096-MR
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2SK1201
Abstract: 2SK120-1 g1323
Text: M MTbEDS 2SK 1201 Q D 1 3 E 3 7 TÔT HITACHI/ OPTOELECTRONICS « H i m bl E D S IL IC O N N -C H A N N E L M O S F E T -, HIGH SPEED POWER SWITCHING c" a :! LÌ □ 1.G ate 2. D rain (FUnce) 3. Source (Dimensions in i <4' *“ M <? Low On-Resistance High Speed Switching
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2SK1201
00132M0
2SK1201
2SK120-1
g1323
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Untitled
Abstract: No abstract text available
Text: m 2SK1313 ,2SK1313 § -2SK1314©,2SK1314(§) blE D M M ^ b ED S 0 0 1 3 3 3 0 40b IHIT4 © 1 > ,K SILICON N-CHANNEL MOS F E T 10.2 ± 0 .3 4 44 ± 0 2 HIGH SPEED POWER SWITCHING 4.44 ± 0.2 L 1.3 ± 0 .2 ? • FEATURES o.i ^ 2759 ±0.2 H ¡ 0 .4 ±0.1 •
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2SK1313Â
2SK1313(
-2SK1314Â
2SK1314(
2SK1155
2SK1156
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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2SK579
Abstract: MPT 0,5 k580
Text: S K 5 7 9 , 2 S K 5 8 2 S K 5 7 9 < § , 2 S K 5 8 L ), S •HITM 2 SILICON N-CHANNEL MOS FET 3 bS HIGH SPEED POWER SWITCHING DC-DC Converter, Motor Controls, and Ultrasonic 1. 2. 3. 4. Power Oscillators. G ate D r a in So u rce D ra m (D im e n s io n s in m m l
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2SK579©
2SK579®
2SK580®
2SK579
MPT 0,5
k580
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2SK350
Abstract: 2sk350 hitachi 2SK349
Text: HI T A C H I / { O P TO ELECT RO NI CS } — 73 2 p re t? ? x r5 ^ H ^ D E ] M4ci b à 0 S ^ D Î 0 D â Ô 73C 10020 } 2SK349,2SK350 max S IL IC O N N -C H A N N E L M O S FET 1.5 HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES •
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2SK349
2SK350
2SK350
2sk350 hitachi
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2sk 100a
Abstract: 2SK1063
Text: 2SK1063,2SK1064blE » • MMÌbEOS G Ü 13173 T 3 T SILICON N-CHANNEL MOS F E T IH I T 4 HITACHI/ OPTOELECTRONICS HIGH SPEED POWER SWITCHING 1. Gate 2. Source 3. Drain (C ase) (Dimensions in nun) (JE D E C T O -3 ) IABSOLUTE MAXIMUM RATINGS (To=25°C) Ite m
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2SK1063
2SK1064blE
001317b
2sk 100a
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2SK298
Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
Text: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.
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G013024
2SK298
2SK299
2SK299
J-10
diode vu
J10 DIODE
HITACHI 2SK* TO-3
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2SK580
Abstract: 2SK579 2SK57 2SK58
Text: 2SK579 L ,2SK580£), 2SK579 ,2SK580(§) IJ J V N * + M O S FET SILICON N -C H A N N EL M O S FET HIGH S P E E D PO W ER SWITCHING 3F à I © Type L -J Type 2,4 r= 2i 1. Y - V : G ate 2. F l " i > ! D ra in 3. y 4. F w - Í X ! D ra in — X I S o u rc e
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2sk579cd,
2sk579Â
2sk580cp,
2sk580Â
00A/us
2SK580
2SK579
2SK57
2SK58
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Untitled
Abstract: No abstract text available
Text: 2SK1371.2SK1372 MMTtiEGS Ü01 3 3A 1 =l?fl blE D iH ITM SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and
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2SK1371
2SK1372
7c-25
2SK1372
50MITTANCE
-2SK1371,
2SK1371,
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2SK1371
Abstract: VM-201 2SK1372 HITACHI 2SK* TO-3 Hitachi Scans-001
Text: bl E D M4TbEGS DD133Ô1 IHITM 2 S K 1 3 7 1 .2 S K 1 3 7 2 SILICON N-CHAIMNEL M O S FET HIGH SPEED POWER SWITCHING • FEATURES • • • • • 1. 2. 3. Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator and
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DD133Ã
2SK1371
2SK1372
7c-25
2SK1371,
2SK1372
00133flM
VM-201
HITACHI 2SK* TO-3
Hitachi Scans-001
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2sk mosfet
Abstract: 2SK904
Text: 2SK904 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators
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2SK904
2sk mosfet
2SK904
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2sk298
Abstract: 2SK299 3tb 40 Hitachi Scans-001
Text: 44<ib205 G013024 blE D IHIT4 4bT 2SK298,2SK299 HITACHI/C OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.
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G013024
2SK298
2SK299
2SK299
3tb 40
Hitachi Scans-001
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2sk mosfet
Abstract: 2sk 30A MOSFET 25C1 2SK1020 P15A
Text: 2SK1020 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g ss~ ± 30V Guarantee ■Applications
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2SK1020
2sk mosfet
2sk 30A MOSFET
25C1
2SK1020
P15A
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diode A226
Abstract: A226 diode mosfet 4502 A226 equivalent 2SK903 equivalent 2SK903-M 2SK903
Text: 2SK903-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown 10±05 032 *02 4 5±02 % • Low driving power • High voltage <D@® 1 : Gate
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2SK903-M
SC-67
diode A226
A226 diode
mosfet 4502
A226 equivalent
2SK903 equivalent
2SK903
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2sk mosfet
Abstract: No abstract text available
Text: 2SK1008-01 S IP M O S 1* FUJI POWER M O S-FET N CHANNEL SILICON POWER MOS-FET i- A l-k T T o r m • Features ■ Outline Drawings r o FAP-11 S ER IEb • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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2SK1008-01
FAP-11
A2-77
2sk mosfet
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2SK553
Abstract: DIODE T25 4 Jo 2SK552 J5111 H12B Hitachi Scans-001
Text: 2SK552,2SK553— blE D • 44^505 DG13DÖ3 TTfl iH i m HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • L ow O n -R e s is ta n c e . • H ig h S p e e d S w itc h in g . • L o w D riv e C u r r e n t. •
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44TtjSQS
DG13DÃ
2SK552
2SK553
O-220AB)
0D130Ã
2SK552,
2SK553
441b2QS
DIODE T25 4 Jo
J5111
H12B
Hitachi Scans-001
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