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    2SK349 Price and Stock

    Rochester Electronics LLC 2SK3491-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3491-TL-E Bulk 409,500 1,402
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    Rochester Electronics LLC 2SK3495-AZ

    MOSFET N-CH
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    DigiKey 2SK3495-AZ Bulk 55,000 2,219
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    Rochester Electronics LLC 2SK3492-TL-E

    GENERAL PURPOSE TRANSISTOR
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    DigiKey 2SK3492-TL-E Bulk 25,900 592
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    Rochester Electronics LLC 2SK3491-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3491-E Bulk 1,850 468
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    onsemi 2SK3491-TL-E

    Trans MOSFET N-CH Si 600V 1A 3-Pin(2+Tab) TP-FA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3491-TL-E 273,000 1,716
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    2SK3491-TL-E 136,500 1,716
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    Rochester Electronics 2SK3491-TL-E 409,500 1
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    Find more 2SK349 price and stock on Findchips.com

    2SK349 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK349 Hitachi Semiconductor Silicon N-Channel MOS FET, High Speed Power Switching Scan PDF
    2SK349 Hitachi Semiconductor Silicon N-Channel MOSFET Scan PDF
    2SK349 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK349 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK349 Unknown FET Data Book Scan PDF
    2SK3490 Sanyo Semiconductor General-Purpose Switching Device Applications Original PDF
    2sk3491 Sanyo Semiconductor Original PDF
    2SK3491 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3491TP Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3492 Sanyo Semiconductor N CHANNEL MOS SILICON TRANSISTORl Original PDF
    2SK3494 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2SK3494 Panasonic Power Device - Power MOS FETs Original PDF
    2SK3495 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3497 Toshiba power MOSFET Original PDF
    2SK3497 Toshiba FETs - Nch 150V Original PDF
    2SK3497 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3498 Toshiba Transistors - Mosfets Original PDF
    2SK3498 Toshiba Japanese - Transistors - Mosfets Original PDF
    2SK3498 Toshiba DC-DC Converter, Relay Drive and Motor Drive Applications Original PDF
    2SK3498 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK349 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3491

    Abstract: K349 2SK3491 2SK349
    Text: Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source


    Original     		ENN6959 2SK3491 2083B 2SK3491] 2092B k3491 K349 2SK3491 2SK349 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber : ENN6970~j N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it : mm • Ullrahigh-speed switching. 2087A • 4V drive. [2SK3495] • Meets radial taping. 2.5 1. 4 5 ,


    OCR Scan     		ENN6970 2SK3495 2SK3495] PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3


    Original     		2002/95/EC) 2SK3494 PDF

    K349

    Abstract: 2SK3499
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		2SK3499 K349 2SK3499 PDF

    2SK3492

    Abstract: D1306
    Text: 2SK3492 注文コード No. N 8 2 7 9 三洋半導体データシート N 2SK3492 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original     		2SK3492 IT09602 IT09605 IT09607 IT09608 IT09609 2SK3492 D1306 PDF

    toshiba marking code transistor

    Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
    Text: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		2SK3497 2SJ618 toshiba marking code transistor K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ PDF

    2SK3492

    Abstract: 70103PA
    Text: 注文コード No. N 0 0 0 0 2SK3492 暫 定 規 格 No. N0000 70103 新 2SK3492 特長 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original     		2SK3492 N0000 70103PA 2SK3492 PDF

    jeita sc-65

    Abstract: K3497 2SK3497 2SJ618 SC-65
    Text: 2SK3497 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3497 ○ 低周波電力増幅用 単位: mm VDSS 180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±12 V 許 チ 保 注 1: 注 2: 容 DC (注 1) ID 10 A パルス


    Original     		2SK3497 2SJ618 SC-65 2-16C1B 20070701-JA jeita sc-65 K3497 2SK3497 2SJ618 SC-65 PDF

    2sK3496

    Abstract: 2SK3496-01MR
    Text: 2SK3496-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		2SK3496-01MR O-220F dVDS/dt10 2sK3496 2SK3496-01MR PDF

    K349

    Abstract: k3499 2SK3499
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: Yfs = 8.0 S (typ.)


    Original     		2SK3499 K349 k3499 2SK3499 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching


    Original     		2002/95/EC) 2SK3494 PDF

    2SK3490

    Abstract: 2D2-10
    Text: 2SK3490 Ordering number : EN9085 N-Channel Silicon MOSFET 2SK3490 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original     		2SK3490 EN9085 250mm2 2SK3490 2D2-10 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor 2SK3498 transistor k3498 k349 PDF

    K3498

    Abstract: 2SK3498 K3498 Transistor K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)


    Original     		2SK3498 K3498 2SK3498 K3498 Transistor K349 PDF

    2SK3495

    Abstract: No abstract text available
    Text: Ordering number : ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. unit : mm 2087A [2SK3495] 2.5


    Original     		ENN6970 2SK3495 2SK3495] PW10o. 2SK3495 PDF

    k3494

    Abstract: 2SK3494
    Text: Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C


    Original     		2SK3494 k3494 2SK3494 PDF

    K3498

    Abstract: K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 to150 K3498 K3498 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		2SK3499 to150 PDF

    2SK3492

    Abstract: No abstract text available
    Text: 2SK3492 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 2.21 NLX 4.70E-07 DVT2 -0.01 UB 1.00E-21 AGS 0.72 1.22E+04 RDSW WINT 0.68 NFACTOR CDSCD PCLM 0.20 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.40E-11 CGDL 2.80E-10


    Original     		2SK3492 70E-07 00E-21 40E-11 80E-10 0E-07 90E-07 463904E-6 463904E-12 8E-04 2SK3492 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor 2SK3498 PDF

    2SK3499

    Abstract: K349
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		2SK3499 2SK3499 K349 PDF

    K3498

    Abstract: K3498 Transistor transistor k3498 2SK3498 K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 K3498 K3498 Transistor transistor k3498 2SK3498 K349 PDF

    k3498

    Abstract: 2SK3498 K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original     		2SK3498 k3498 2SK3498 K3498 Transistor PDF

    2sk350 hitachi

    Abstract: 2SK350 2SK349 KDS -5a
    Text: 2SK349.2SK350 yU=3> S IL IC O N N -C H A N N E L M OS FET S FET HIGH SPEED POW ER S W IT C H IN G 5.0max. 1.5 1. Y 2. y i " y : D ra in — I- ! G a te (~7 7 y v 3. V — * (F la n g e ) • So u rce (D im e n s io n s in mm) (T O -3P ) ABSOLUTE MAXIMUM RATINGS (Ta= 25'C)


    OCR Scan     		2SK349 2SK350 Vgs-15V* 2sk350 hitachi KDS -5a PDF