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Toshiba America Electronic Components 2SK2989,F(J MOSFET N-CH TO92MOD
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Toshiba America Electronic Components 2SK2989,T6F(J MOSFET N-CH TO92MOD
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Rochester Electronics LLC 2SK2980ZZ-TL-E SMALL SIGNAL N-CHANNEL MOSFET
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DigiKey	2SK2980ZZ-TL-E	Bulk			738	1 - 10 - 100 - 1000 $0.41 10000 $0.41	Buy Now
Toshiba America Electronic Components 2SK2989(TPE6,F,M) MOSFET N-CH TO92MOD
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DigiKey	2SK2989(TPE6,F,M)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SK2989(T6CANO,A,F MOSFET N-CH TO92MOD
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DigiKey	2SK2989(T6CANO,A,F	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SK298 Datasheets (65)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK298	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SK298	Hitachi Semiconductor	Silicon N-Channel MOSFET	Scan	PDF
2SK298	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK298	Unknown	FET Data Book	Scan	PDF
2SK298	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK2980	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2980	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2980ZZ-TL-E	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2980ZZ-TR-E	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF
2SK2981	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK2981	NEC	Semiconductor Selection Guide	Original	PDF
2SK2981-E1	NEC	Power MOSFET	Original	PDF
2SK2981-E2	NEC	Power MOSFET	Original	PDF
2SK2981-T1	NEC	Power MOSFET	Original	PDF

2SK2981-T2	NEC	Power MOSFET	Original	PDF
2SK2981-Z	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK2982	NEC	MOS Field Effect Transistor	Original	PDF
2SK2982	NEC	Semiconductor Selection Guide	Original	PDF
2SK2982-Z	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK2983	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF

2SK298 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : \|Yfs\| = 70 S (typ.)	Original	PDF	2SK2985
Untitled Abstract: No abstract text available Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)	Original	PDF	2SK2980 REJ03G1061-0400 ADE-208-571B) PLSP0003ZB-A
K298 Abstract: K2986 Text: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : \|Yfs\| = 80 S (typ.)	Original	PDF	2SK2986 K298 K2986
2SK2982 Abstract: 2SK2982-Z Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2982 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-resistance RDS on 1 = 12.5 mΩ MAX. (VGS = 10 V, ID = 15 A)	Original	PDF	2SK2982 2SK2982 O-251) O-251 2SK2982-Z O-252 2SK2982-Z
2sk2988 Abstract: JISC7030 SC-75 Text: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm M Di ain sc te on na tin nc ue e/ d 1.6±0.15 +0.1 0.2–0.05 0.5 1.0±0.1 −40 V Drain current ID 10 mA	Original	PDF	2SK2988 SC-75 2sk2988 JISC7030 SC-75
Untitled Abstract: No abstract text available Text: 2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK2989 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 120 mΩ (typ.) High forward transfer admittance : \|Yfs\| = 2.6 S (typ.)	Original	PDF	2SK2989
K2986 Abstract: No abstract text available Text: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance : \|Yfs\| = 80 S (typ.)	Original	PDF	2SK2986 2-10HIBA K2986
Untitled Abstract: No abstract text available Text: 2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2986 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) High forward transfer admittance : \|Yfs\| = 80 S (typ.)	Original	PDF	2SK2986
Untitled Abstract: No abstract text available Text: 2SK2980 Spice parameter .SUBCKT 2sk2980 1 2 3 * Model generated on Jun 1, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:	Original	PDF	2SK2980 1e-32 9901e-05 11266e-06 1e-11 5e-09 23799e-10
pyroelectric sensor Abstract: JISC7030 Junction-FET junction fet high frequency n-channel SSMIni noise gate SS TRANSISTOR 2SK2988 SC-75 Text: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 +0.1 1.0±0.1 0.5 0 to 0.1 +0.1 0.15–0.05 0.45±0.1 0.3 0.75±0.15 Symbol Unit	Original	PDF	2SK2988 JISC7030, pyroelectric sensor JISC7030 Junction-FET junction fet high frequency n-channel SSMIni noise gate SS TRANSISTOR 2SK2988 SC-75
2SK2983 Abstract: 2SK2983-S MP-25 MP-25Z Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2983 N チャネルパワーMOS FET スイッチング用工業用 2SK2983 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。	Original	PDF	2SK2983 O-220AB 2SK2983-S O-262 2SK2983-Z O-220SMD D12357JJ3V0DS00 2SK2983 2SK2983-S MP-25 MP-25Z
ITE 8502 Abstract: 2SK2984 2SK2984-S MP-25 MP-25Z 2SK29 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK2984 N チャネルパワーMOS FET スイッチング用工業用 2SK2984 は N チャネル縦型 MOS FET でオン抵抗特性が優れており，スイッチング電源に適しています。	Original	PDF	2SK2984 O-220AB) O-220AB 2SK2984-S O-262 2SK2984-Z O-220SMD O-262) ITE 8502 2SK2984 2SK2984-S MP-25 MP-25Z 2SK29
Hitachi DSA00276 Abstract: No abstract text available Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0. 2Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2	Original	PDF	2SK2980 ADE-208-571B D-85622 Hitachi DSA00276
2SK2987 Abstract: SC-65 Text: TOSHIBA 2SK2987 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSÏÏ 2SK2987 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Source ON Resistance : RßS (ON)= 4.5mO (Typ.)	OCR Scan	PDF	2SK2987 136yt/H SC-65

Untitled Abstract: No abstract text available Text: TO SHIBA 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SH 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : Rd S (ON) = 4.5 m il (Typ.)	OCR Scan	PDF	2SK2985
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2986 T O SH IBA FIELD EFFECT TRA NSISTO R SILICON N C H A N N EL M O S TYPE U - M O S II 2SK2986 HIGH CURRENT SW ITCH IN G APPLICATIO NS DC-DC CONVERTER, RELAY DRIVE A N D M O T O R DRIVE APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX	OCR Scan	PDF	2SK2986
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK2987 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSH 2SK2987 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : Rd S (ON)= 4.5mfl (Typ.)	OCR Scan	PDF	2SK2987 20kil)
Untitled Abstract: No abstract text available Text: 2SK2980 Silicon N-Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDS on = 0. 2Q typ. (Vcs = 4 V, ID= 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline M PAK 1. Source 2. G ate 3. Drain 1266 ADE-208-571	OCR Scan	PDF	2SK2980 ADE-208-571
Untitled Abstract: No abstract text available Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 current switching applications. FEATURES	OCR Scan	PDF	2SK2982 O-251 2SK2982-Z O-252
2SK298 Abstract: 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3 Text: IHIT4 4MTb205 G013024 4bT blE D 2SK298,2SK299 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING , HIGH FREQUENCY POWER AMPLIFIER • FEATURES • Low On-Resistance. • High Speed Switching. • High Cutoff Frequency. • No Secondary Breakdown.	OCR Scan	PDF	G013024 2SK298 2SK299 2SK299 J-10 diode vu J10 DIODE HITACHI 2SK* TO-3
diode PJ 0416 Abstract: diode PJ 0416 diode 0416 PJ 0416 Text: TO SHIBA TENTATIVE 2SK2986 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O SII 2SK2986 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10.3 MAX. Low Drain-Source ON Resistance	OCR Scan	PDF	2SK2986 max100 diode PJ 0416 diode PJ 0416 diode 0416 PJ 0416
Untitled Abstract: No abstract text available Text: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance Rds oh i = 20 m£i (MAX.) (Vgs = 10 V, Id = 15 A)	OCR Scan	PDF	2SK2983 -220AB 2SK2983-S O-262 2SK2983-ZJ O-263 O-220AB MP-25)
2SK2989 Abstract: No abstract text available Text: TOSHIBA 2SK2989 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2SK2989 HIGH SPEED SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX. APPLICATIONS Low Drain-Source ON Resistance : Rd S(ON) = 120 mH (Typ.)	OCR Scan	PDF	2SK2989 VDD-40V, 2SK2989
45ACZ Abstract: No abstract text available Text: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M OSII 2S K2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : \|Yfs\| = 70S (Typ.)	OCR Scan	PDF	2SK2985 K2985 45ACZ

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2SK298 Search Results

2SK298 Price and Stock

Toshiba America Electronic Components 2SK2989,F(J

Toshiba America Electronic Components 2SK2989,T6F(J

Rochester Electronics LLC 2SK2980ZZ-TL-E

Toshiba America Electronic Components 2SK2989(TPE6,F,M)

Toshiba America Electronic Components 2SK2989(T6CANO,A,F

2SK298 Datasheets (65)

2SK298 Datasheets Context Search

Untitled

Untitled

K298

2SK2982

2sk2988

Untitled

K2986

Untitled

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pyroelectric sensor

2SK2983

ITE 8502

Hitachi DSA00276

2SK2987

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2SK298

diode PJ 0416

Untitled

2SK2989

45ACZ