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    2SJ537 Search Results

    2SJ537 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ537 Toshiba Original PDF
    2SJ537 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SJ537 Toshiba Pch Power MOSFET; ; Package: TO-92MOD; R DS On (max 0.34) (max 0.19); I_S (A): (max -5) Original PDF
    2SJ537 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ537 Toshiba P-Channel MOSFET Original PDF
    2SJ537 Toshiba Silicon P-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SJ537 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (pi-MOSVI) Scan PDF

    2SJ537 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ537

    Abstract: Toshiba 2SJ
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)


    Original     		2SJ537 2SJ537 Toshiba 2SJ PDF

    j537

    Abstract: J5-37 2SJ537
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)


    Original     		2SJ537 j537 J5-37 2SJ537 PDF

    J537

    Abstract: 2SJ537
    Text: 2SJ537 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅥ 2SJ537 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.16Ω (標準) z 順方向伝達アドミタンスが高い。


    Original     		2SJ537 -100A O-92MOD 138/W J537 2SJ537 PDF

    2SJ537

    Abstract: J537
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		2SJ537 2SJ537 J537 PDF

    2SJ537

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Souree On Resistance


    OCR Scan     		2SJ537 2SJ537 PDF

    2SJ537

    Abstract: Toshiba 2SJ
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) l High forward transfer admittance


    Original     		2SJ537 2SJ537 Toshiba 2SJ PDF

    J537

    Abstract: 2SJ537
    Text: 2SJ537 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅥ 2SJ537 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.16Ω (標準) z 順方向伝達アドミタンスが高い。


    Original     		2SJ537 -100A O-92MOD 138/W 20070701-JA J537 2SJ537 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		2SJ537 PDF

    J537

    Abstract: 2SJ537
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance


    Original     		2SJ537 J537 2SJ537 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)


    Original     		2SJ537 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 7T-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source On Resistance


    OCR Scan     		2SJ537 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)


    Original     		2SJ537 PDF

    2SJ537

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ537 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI 2SJ537 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Souree On Resistance


    OCR Scan     		2SJ537 2SJ537 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    j537

    Abstract: No abstract text available
    Text: 3.50 PHONE JACK V~T S c h e m a tic AC -O 1 -o * -o 1 V A_ -O 3 -O 5 -O 2 -O 4 V AC -O 2 -O 1 -o ♦ -O 5 -O 2 -o 1 AC -O 5 -O 2 NEW 2 S J -4 3 7 2 3 N 1 3 2 S J -4 3 7 3 3 N 1 3 2 S J -4 3 7 4 3 N 1 3 2 S J -4 3 7 4 3 N 13 OLD S J -4 3 7 2 -N -M Model No.


    OCR Scan     		2SJ-53723T13 2SJ-53733T13 2SJ-53743T13 2SJ-53753T13 J-5372-M J-5373-M J-5374-M J-5375-M 2SJ-53723N13 2SJ-53733N13 j537 PDF