Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD668 Search Results

    2SD668 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD668 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SD668 Hitachi Semiconductor Silicon NPN Epitaxial Transistor Scan PDF
    2SD668 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD668 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD668 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD668 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD668 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD668 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD668 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD668 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD668 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD668 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD668 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD668 Unknown Cross Reference Datasheet Scan PDF
    2SD668A Renesas Technology Silicon NPN Epitaxial Original PDF
    2SD668A Hitachi Semiconductor Silicon NPN Epitaxial Transistor Scan PDF
    2SD668A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD668A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD668A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD668A Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SD668 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB648

    Abstract: 2SB648A Hitachi DSA001650
    Text: 2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SB648 2SB648A Unit Collector to base voltage


    Original
    2SB648, 2SB648A 2SD668/A O-126 2SB648 2SB64 D-85622 2SB648 2SB648A Hitachi DSA001650 PDF

    2SB694H

    Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
    Text: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669


    OCR Scan
    2SD661 2SD661A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2-31A1A) 2SD695 2SB694H 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD706 PDF

    2SB648

    Abstract: 2SD663 2SB648A 2SB64 2SB64R
    Text: HITACHI 2SB648, 2SB648A SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SD668/A f! Li. $ PO- C3 1. E :m iiic r 2. C o lle c to r 3. Base P ? m c n ? i-ony ir> m w (JEPEC TO-126 MOO.) M ABSOLUTE M AXIM UM RATINGS <Ta=25°C)


    OCR Scan
    2SB648, 2SB648A 2SD663/A O-126 2SB64R 2SB648A -160V, -10mA -10mA 2SB648 2SD663 2SB64 PDF

    Untitled

    Abstract: No abstract text available
    Text: H ITACH I 2SD668, 2SD668A S IL IC O N N P N E P iT A X IA L LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SB648/A I l il MIS 43.7x07 î4 ; t> \f 15.61 0.5 l?in<ues * ' *.1; x g t . C o iU 'i.3 0 i f S •!<; n s ii:s< - ' 2J Í 0J JEDEC TO-126 MOD.


    OCR Scan
    2SD668, 2SD668A 2SB648/A O-126 ZS066XA 2SD66H 2S0668 SD66HA PDF

    2sd668

    Abstract: 2sd668a hitachi 180 c
    Text: 2SD668,2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline T O -1 2 6 M O D I 1. E m itte r 2. C o lle c to r 3. B a se Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol


    OCR Scan
    2SD668 2SD668A 2SB648/A 2SD668 2SD668, D-85622 2sd668a hitachi 180 c PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD668 TRANSISTOR NPN TO – 126 FEATURES z Low Frequency Power Amplifier 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original
    O-126 2SD668 PDF

    2SD668A

    Abstract: 2SD668 Hitachi DSA00164
    Text: 2SD668, 2SD668A Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD668 2SD668A Unit Collector to base voltage


    Original
    2SD668, 2SD668A 2SB648/A O-126 2SD668 2SD668A D-85622 2SD668 Hitachi DSA00164 PDF

    2SB648

    Abstract: 2SB648A
    Text: 2SB648, 2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline T O -126 MOD Í | 1. Em itter 2. Collector 3. Base 1 „ ^ 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SB648


    OCR Scan
    2SB648, 2SB648A 2SD668/A 2SB648 2SB648A 2SB648 2SB62 PDF

    2SD668

    Abstract: 2Sd668A
    Text: 2SD668, 2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO -126 MOD Ì 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD668 2SD668A Unit


    OCR Scan
    2SD668, 2SD668A 2SB648/A 2SD668 2SD668A PDF

    2SB648

    Abstract: 2SB648A
    Text: 2SB648,2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD I 1 1 Absolute Maximum Ratings Ta = 1. Emitter 2. Collector 3. Base Qill 25 °C Ratings Item Symbol 2SB648 2SB648A


    OCR Scan
    2SB648 2SB648A 2SD668/A O-126 2SB648 2SB648A 2SB648, D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD668/2SD668A TRANSISTOR NPN TO – 126C FEATURES z Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    O-126C 2SD668/2SD668A 2SB649/A 2SD668 2SD668A PDF

    2SD668

    Abstract: 2SD668A
    Text: HITACHI 2SD668, 2SD668A SILICON NPN EPITAXIAL LOW FREQ UEN C Y HIGH VOLTAGE AM PLIFIER COM PLEMENTARY PAIR WITH 2SB643/A I* eg O 11.0 i—I CÒ •o\| 2 15.6±0.S 3.7±0.7 I , Hi I lilt'd 1. it C o lltc io r .1. ik isc Dii»Knsiorvs in m ini I— -I 2,a±D.;t


    OCR Scan
    2SD668, 2SD668A 2SB648/A 2SD668 2SD668A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB648,2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD i 1 1 . Em itter 2. Collector 1 3. Base „ ill 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SB648


    OCR Scan
    2SB648 2SB648A 2SD668/A O-126 2SB648 2SB648A PDF

    2SD668

    Abstract: No abstract text available
    Text: 2SD668, 2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SD668 2SD668A


    OCR Scan
    2SD668, 2SD668A 2SB648/A 2SD668 2SD668 2SD668A PDF

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


    Original
    000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586 PDF

    2SC144

    Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
    Text: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845


    OCR Scan
    2SC2839 2SC1393 2SC1S55 2SC1047 2SC180S 2SC1855 2SC1809 2SC144 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A PDF

    2SC2291

    Abstract: 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685
    Text: - S € Type No. 2SC 1619A tt € Manuf. 2SC 1620 2SC 1621 2SC 1622 2 SC 1622A 2SC 2SC 2SC 2SC 2SC 1623 1624 1625 1626 1627 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1627A 1628 1629 ^ 1630 1631 1632 1633 1634 1635 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1636 ^ 1637 ^ 1638


    OCR Scan
    1619ft 2SC2104 2SC891 2SC2291 2SC4453 2SC2480 2SC4911K 2SC4639 2SC2712 2SC2462 2SC2291 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685 PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original
    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    616A TRANSISTOR

    Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan
    2SD586A 2SD736A 2SD738A 2SD743A 2SD968A 616A TRANSISTOR 2sD586A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original
    2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original
    BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original
    2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF