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    2SB62 Price and Stock

    Hirose Electric Co Ltd AP105-GT10R-2022S-B(62)

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    Mouser Electronics AP105-GT10R-2022S-B(62)
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    Amphenol Industrial Operations 97-4106A14S-2S-B-621

    Con Circ Strt Plug 04Ct Soc Rohs Compliant: Yes |Amphenol Industrial 97-4106A14S-2S-B-621
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    Amphenol Industrial Operations 97-3106A14S-2S-B-621

    Con Circ Strt Plug 04Ct Soc Rohs Compliant: No |Amphenol Industrial 97-3106A14S-2S-B-621
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    Amphenol Industrial Operations 97-3102A-14S-2S(B)(621)

    Circular Connector Receptacle, Female, MIL-5015,97 Series | Amphenol Industrial 97-3102A-14S-2S(B)(621)
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    Amphenol Industrial Operations 97-3106A-14S-2S(B)(621)

    Circular Connector Receptacle, Female, MIL-5015,97 Series | Amphenol Industrial 97-3106A-14S-2S(B)(621)
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    2SB62 Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB62 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB62 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB62 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB62 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB62 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB62 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB62 Unknown Vintage Transistor Datasheets Scan PDF
    2SB62 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB620 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB620 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB620 Unknown Cross Reference Datasheet Scan PDF
    2SB620 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB620 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB620 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB620 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB621 Panasonic Transistor for low-frequency driver amplification. Complementary to 2SD0592 (2SD592) Original PDF
    2SB621 Panasonic Silicon PNP Transistor Original PDF
    2SB621 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SB621 Various Russian Datasheets Transistor Original PDF
    2SB621 Micro Electronics 750mW NPN Silicon Transistor Scan PDF

    2SB62 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB628

    Abstract: IC03a
    Text: SavantIC Semiconductor Product Specification 2SB628 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High VCEO APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to


    Original     		2SB628 O-220C -120V; 2SB628 IC03a PDF

    2SB624

    Abstract: 2SD596
    Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2


    OCR Scan     		2SB624 2SB624 2SD596 NECTOKJ22686 PDF

    2SB624

    Abstract: 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4
    Text: 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   High DC Current Gain. hFE：200 Typ. (VCE= -1V, IC= -100mA) Complimentary to 2SD596


    Original     		2SB624 OT-23 hFE200 -100mA) 2SD596 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV4 2SB624-BV5 2SB624 2SB624BV3 2SB624-BV4 2SB624-BV1 2SB624-BV2 2SB624-BV3 2SB624-BV5 2SD596 2SB624BV2 2SB624BV4 PDF

    BV4 pnp

    Abstract: BV4 transistor 2SB624 2SD596
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ PDF

    2SB621A

    Abstract: 2SB621 2SD592 2SD592A
    Text: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage


    OCR Scan     		2SD592 2SB621 2SD592A 2SB621A 750mW /2SD592 2SB621A PDF

    BSW45A

    Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi


    Original     		BC212LA BCW86 2SB637K 2SB710A 2SA891 2SB621A BSW45A LOW-POWER SILICON PNP p60n 2SA1299E BC212BP PDF

    2SB0621

    Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
    Text: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.


    Original     		2SB0621, 2SB0621A 2SB621, 2SB621A) 2SD0592 2SD592) 2SD0592A 2SD592A) 2SB0621 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A PDF

    Untitled

    Abstract: No abstract text available
    Text: S IL IC O N T R A N S IS T O R 2SB624 A U D IO F REQ U EN CY PO W ER A M P L IF IE R P N P S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N P A C K A G E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom­


    OCR Scan     		2SB624 2SB624 PDF

    2SB624

    Abstract: 2SD596
    Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.


    Original     		2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624 PDF

    2SB624

    Abstract: No abstract text available
    Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA


    Original     		2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 2SB624 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ PDF

    2SB641 r

    Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
    Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #


    OCR Scan     		2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686 PDF

    IC MAX 797

    Abstract: 2SD608 2SB628 S3V77 251C
    Text: 2SD608/2SB628 2SD 608/2SB 628 N PN /PN P x >J n V h ÿ V ' / X ? / N P N / P N P SILICON EPIT A X IA L TRANSISTOR y ^ " ffl/A u d io Frequency Power / i & i Ê M Z 'i "j 8 S/FEA TU RES • *Hf50/PACKAGE DIMENSIONS Unit:mm 100~150 Wffl-’'" V —T V 7‘CO K iM 'v lg i: L T S ig o


    OCR Scan     		2SD608/2SB628 2SD608 2SB628 Hf50/PACKAGE 2SB628 2SB628/2SD608 PWS350//S, IC MAX 797 S3V77 251C PDF

    bv5 300

    Abstract: 2SB624
    Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation


    Original     		2SB624 SC-59 -500mA -250mA -200mA -100mA 16-Aug-05 SC-59 bv5 300 2SB624 PDF

    sot-23 bv2

    Abstract: marking BV4 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage


    Original     		OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA sot-23 bv2 marking BV4 2SB624 PDF

    2SD592

    Abstract: 2SD592A transistor 2SD592a 2SB621 2SB621A
    Text: Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings


    Original     		2SD592, 2SD592A 2SB621 2SB621A 2SD592 2SD592 2SD592A transistor 2SD592a 2SB621A PDF

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624 PDF

    2SB0621A

    Abstract: 2SB621A 2SD0592A 2SD592A
    Text: Transistors 2SD0592A 2SD592A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)


    Original     		2SD0592A 2SD592A) 2SB0621A 2SB621A) 2SB0621A 2SB621A 2SD0592A 2SD592A PDF

    2SB621

    Abstract: 2SB621A 2SD592 2SD592A
    Text: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings


    Original     		2SB621, 2SB621A 2SD592 2SD592A 2SB621 2SB621 2SB621A 2SD592A PDF

    sot-23 bv4

    Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4 PDF

    hFE-200 transistor PNP

    Abstract: 2SB624
    Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624 PDF

    2SB0621

    Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
    Text: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).


    Original     		2SD0592, 2SD0592A 2SD592, 2SD592A) 2SB0621 2SB621) 2SB0621A 2SB621A) 2SD0592 2SB0621 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A PDF

    D1802

    Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
    Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)


    Original     		2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier PDF