2SD1611 Search Results

2SD1611

Abstract: 2SD16H package s4t
Contextual Info: Power T ransistors 2SD 1611 2SD1611 Silicon Triple-Diffused Planar Darlington Type P ow e r Am plifier P ackage D im ension s • Fe a tu res • High DC cu rren t gain I if e • High collector-base voltage ( V Cbo ) • “N T ype" package configuration with a cooling fin for direct soldering

smd npn darlington

Abstract: 2SD1611
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type Darlington 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25

2SD1616

Abstract: 2SD16116 2SD1616A 2sd1616 datasheet
Contextual Info: 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2SD16116 50 60 2SD1616A

Contextual Info: Power Transistors 2SD1611 2SD1611 Silicon Trip le -D iffu se d Planar Darlington Type P ack age D im ension s P ow e r A m plifier U n i t 1 mm • Fe a tu re s • H igh D C c u r re n t gain 3.7m ax 8 .7 m ax . 1^1 Ii f e • High c o lle c to r-b a s e v o ltag e

Contextual Info: Transistors SMD Type Product specification 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 High collector-base voltage Emitter open VCBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 1.0±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Contextual Info: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615

2SD1611

Abstract: IC51
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD1611

Abstract: DSA003793
Contextual Info: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington ● 1.5±0.1 10.0±0.3 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to

2SD1611

Contextual Info: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 1.0±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 500 V VCEO 400 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1611 Silicon NPN triple diffusion planar type darlington Unit: mm 1.0±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

2SD1611

Contextual Info: Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington ● 1.5±0.1 10.0±0.3 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

B938A

Abstract: B939A 2SK1967 2SD1316
Contextual Info: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5

2sd2520

Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Contextual Info: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD2502

Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SD1616

Contextual Info: 2SD1616 2SD1616A NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )