2SD1605 Search Results

2SB1105

Abstract: 2SD1605
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605

2SB1105

Abstract: 2SD1605
Contextual Info: HITACHI 2SD1605-S IL IC O N N P N T R IP L E D IF F U S E D L O W F R E Q U E N C Y P O W E R A M P L IF IE R C O M P L E M E N T A R Y P A IR W IT H 2 S B 1 105 J. B ase 2. Collcttar FJjngc 3 I-mi tier ( D iin f n s w in mm) ( J E D E C TO-2ZOAB) • A B S O L U T E M A X IM U M R A T IN G S <Ta=25°C)

15aln

Contextual Info: HITACHI 2 S B 1 1 0 5 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIEfT COMPLEMENTARY PAIR WITH 2SD1605 i r t ^ I. K am « 7. OilUxro? ç| taftgc 3. fomuer 0<mcr»«<*ns fe r-urt) (JEDEC TO-220AB) • ABSOLUTE MAXIMUM RATINGS (Ta=2SX) Symbol item

2SB1105

Abstract: 2SD1605
Contextual Info: JMnic Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

Contextual Info: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage

Contextual Info: HITACHI 2SD1605 SILICON NPN TRIPLE DIFFUSED LOW FR EQ UENC Y PO W ER AMPLIFIER CO M PLEM ENTARY PAIR W ITH 2 S 8 1 105 ! 1W 2. < 5Í:!TKR<iW>ns if. m m (JEDEC TO-220AB) I ABS O LU TE M AXIM UM RATING S (T.r*2.V>0 Item Sym bol! M AXIM UM CHANN EL DISSIPATION

Contextual Info: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 I T 1 |[ WI 1 2 _ 3 1 . Base 2. Collector Flange 3. Emitter T k. Y' T t 1 — V A — 1— W — 1- 1 3.0 kQ. 400 Q.

2SB1105

Abstract: 2SD1605
Contextual Info: Inchange Semiconductor Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications

2SB1105

Abstract: 2SD1605
Contextual Info: HITACHI 2SB1105 — SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER CO M PLEM ENTARY PAIR WITH 2SD1605 1. Base 2. C o llc tto 3. Firmtor Dimensions in mm (JEDEC TO -220AB) M AXIM UM CO LLECTO R DISSIPATION • AB S O LU TE M AXIM UM RATINGS (Ta=25°C)

2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Contextual Info: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615

Hitachi DSA00164

Contextual Info: 2SD1605 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Hitachi SDT 100

Contextual Info: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline TQ -220AB Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O 120 V Collector to emitter voltage

2SB1105

Abstract: 2SD1605
Contextual Info: SavantIC Semiconductor Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1605 APPLICATIONS ·Designed for use in low frequency power amplifier applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Hitachi DSA001650

Contextual Info: 2SD2111 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3.0 kΩ Typ 400 Ω (Typ) 3 2SD2111 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

2SD1039

Abstract: to-53 BUW64A
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

Contextual Info: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 0 F M 2SD2111 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B O 120 V Collector to em itter voltage V CEo 120

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Contextual Info: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103

Contextual Info: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 3.0 kQ. Typ [1 400 Q. (Typ) ¿ 3 ¡t'D 2SD2111 Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Rating