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    2SB1105 Search Results

    2SB1105 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1105 Hitachi Semiconductor Silicon PNP Triple Diffused Transistor Scan PDF
    2SB1105 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1105 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1105 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1105 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1105 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1105 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1105 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SB1105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1105

    Abstract: 2SD1605
    Text: JMnic Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING


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    PDF 2SB1105 O-220C 2SD1605 -30mA -120V, -100V, 2SB1105 2SD1605

    2SB1105

    Abstract: 2SD1605
    Text: Inchange Semiconductor Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications


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    PDF 2SB1105 O-220C 2SD1605 -30mA -120V, -100V, 2SB1105 2SD1605

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: 2SD1605 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 3.0 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol


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    PDF 2SD1605 2SB1105 O-220AB D-85622 Hitachi DSA00164

    2SB1105

    Abstract: 2SD1605
    Text: SavantIC Semiconductor Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1605 APPLICATIONS ·Designed for use in low frequency power amplifier applications


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    PDF 2SB1105 O-220C 2SD1605 -30mA -120V, -100V, 2SB1105 2SD1605

    2SB1105

    Abstract: 2SD1605
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605


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    PDF -120V 2SD1605 -30mA -120V; -100V; 2SB1105 2SD1605

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


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    PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


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    PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    Untitled

    Abstract: No abstract text available
    Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage


    OCR Scan
    PDF 2SD1605 2SB1105 D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline TO-220AB 2 I T 1 |[ WI 1 2 _ 3 1 . Base 2. Collector Flange 3. Emitter T k. Y' T t 1 — V A — 1— W — 1- 1 3.0 kQ. 400 Q.


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    PDF 2SD1605 2SB1105 O-220AB

    2SB1105

    Abstract: 2SD1605
    Text: HITACHI 2SB1105 — SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER CO M PLEM ENTARY PAIR WITH 2SD1605 1. Base 2. C o llc tto 3. Firmtor Dimensions in mm (JEDEC TO -220AB) M AXIM UM CO LLECTO R DISSIPATION • AB S O LU TE M AXIM UM RATINGS (Ta=25°C)


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    PDF 2SB1105 2SD1605 O-22QAB) 2SBI105 -50mA. --I20V. -100V, -30mA* 2SB1105 2SD1605

    Hitachi SDT 100

    Abstract: No abstract text available
    Text: 2SD1605 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1105 Outline TQ -220AB Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O 120 V Collector to emitter voltage


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    PDF 2SD1605 2SB1105 -220AB 2SD1605_ Hitachi SDT 100

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018


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    PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    2sb1099

    Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
    Text: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615


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    PDF 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 T0-220ABJFJ 2SD1606 2SB1108 2sb1099 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595

    2SB1099

    Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
    Text: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103


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    PDF 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077 2SB1078K 2SB1099 MP-45) 2SB1100 2SB1099 2SD1491 2SB1100 2sb111

    2SB1099

    Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
    Text: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w


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    PDF 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB1099 MP-45) 2SB1100 2SD1601 2SB1099 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347