2SC521 Search Results

2SC521

Abstract: 2SA658
Contextual Info: AOK Product Specification AOK Semiconductor 2SA658 Silicon PNP Power Transistors DESCRIPTION • W ith T O -3 package • W ide area o f safe operatio n • C om plem ent to type 2SC521 APPLICATIONS • For audio frequency and pow er am plifier applications

2SC521

Abstract: 2SA658
Contextual Info: Inchange Semiconductor Product Specification 2SA658 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC521 APPLICATIONS ·For audio frequency and power amplifier applications PINNING see Fig.2

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

2SC521

Abstract: 2SA658
Contextual Info: SavantIC Semiconductor Product Specification 2SA658 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC521 APPLICATIONS ·For audio frequency and power amplifier applications PINNING see Fig.2

TRANSISTOR marking 489 code

Abstract: pc 817 2SC5218 DSA003641
Contextual Info: 2SC5218 Silicon NPN Epitaxial ADE-208-279A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

Contextual Info: 2SC5219 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High breakdown voltage VCES= 1700 V • High speed switching tf = 0.15 |isec typ • Built-in damper diode type • Isolated package

2SC5211

Contextual Info: 2SC5211 V 'J □ > N P N i f c f 2 * ' > W H T Í m m W Jf íE I JUttlmm 2S C 5211IÎ, t í f í S í í i t •>'J a > N P N l £ : » * - > 7 / H f ê h 7 > ÿ 7 ? T 3 l / • ?*«»[*> '*!*< ,  M Œ ictait, « s í n x í í u í t o 2S A 1945t n > y j

2sc1815

Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917
Contextual Info: - m tì: % Type No. Manuf. JÊ « SANYO 2 TOSHIBA 'S NEC B ÎL HITACHI ¡ÜÍ ± iS FUJITSU fò T MATSUSHITA * 2SC lb V - - 2SC 17 3K zsuöza * $ 2SC829 * 2SC 17A M. $ 2SC 18 S 2 2SC829 * * 2SC 21 S 2SC521A * 2SC 22 S m 2SD526 * 2SC 23 - d M 2SD526 a±a * 2SC 26

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA658 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= -50V(Min.) • Complement to Type 2SC521

TRANSISTOR marking 489 code

Abstract: 2SC5218 SC-59A Hitachi DSA0014
Contextual Info: 2SC5218 Silicon NPN Epitaxial Transistor Application MPAK VHF & UHF wide band amplifier Features 3 • High gain bandwidth product fT = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz 1 2 1. Emitter 2. Base 3. Collector

B0719

Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power

smd transistor wc

Abstract: smd marking wd wc smd transistor smd marking wc SMD TRANSISTOR MARKING BR marking wc 2SC5214 smd transistor wc dc
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage

Contextual Info: 2SC5219 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 psec typ • Built-in damper diode type • Isolated package

Contextual Info: 2SC5219 Silicon NPN Triple Diffused Planar HITACHI Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 |_iscc typ • Built-in damper diode type • Isolated package

v 817 y

Contextual Info: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5213 FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5213 is a resin sealed silicon NPN epitaxial type transistor. It designed with high voltage, high hFE an d high tr.

2sc5211

Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC5211 FOR GENERAL-PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5211 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and high voltage.

Hitachi DSA00164

Contextual Info: 2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec typ • Built-in damper diode type • Isolated package TO-3P•FM

2SC5213

Abstract: X10-3
Contextual Info: 2SC5213 7 y h '7 - f -> •; □ > N P N I t ‘ ÿ i ' > 7 « w 2SC521 i î t i , W B S iíltítm > ' =1 > N P N l U fi + ■>t )i-Wi h 7 > v * ? T ^ ïf iH t 0 B W Œ . ¡S h F E T , hFEC')ittëtt*i I P * i :& < , S j i f r t f B C , CobftM'S < l i s t , « l> S Í i i T i ' S T 7 . H i- F i/ Í9 - 7 7> 7 ’Í>7'U K t -î 7 'K v K - > a

smd marking wc

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5214 Features High fT fT=100MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1.5A. Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage

Contextual Info: Transistors 2SC5216 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 1.9±0.1 Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)

2SC5219

Abstract: Hitachi DSA00493
Contextual Info: 2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features • High breakdown voltage VCES = 1700 V • High speed switching tf = 0.15 µsec typ • Built-in damper diode type • Isolated package TO-3P•FM