2SB1392 Search Results

Contextual Info: 2SB1392 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Em itter Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit C o lle cto r to base vo lta g e ^G B O -7 0 V C o lle cto r to e m itte r vo lta g e

Contextual Info: 2SB1392 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Em itter Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^C B O -7 0 V Collector to em itter voltage

2SB1392

Abstract: DSA003644
Contextual Info: 2SB1392 Silicon PNP Triple Diffused ADE-208-872 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 12 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB1392

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications.

Hitachi DSA001650

Contextual Info: 2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 12 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

Hitachi DSA002788

Contextual Info: 2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 12 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

IC2A

Abstract: 2SB1392
Contextual Info: SavantIC Semiconductor Product Specification 2SB1392 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

2SB1392

Abstract: Hitachi DSA00398
Contextual Info: 2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 12 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

2SB1392

Contextual Info: 2SB1392 Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25°C Item TO-220 FM Symbol Rating Unit ————————————————————– Collector to base voltage VCBO –70 V ————————————————————–

Contextual Info: HITACHI 2SB1392-Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO -7 0 V Collector to emitter voltage VCE0 -6 0 V Emitter to base voltage VEBO

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2SB1392

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2sb1355

Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Contextual Info: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^

2SB1392

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SB1370

Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40

2sc2899 transistor

Abstract: 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
Contextual Info: 24 HIT ACH I/ O P T O E L E C T R O N I C S blE ]> • 44^205 0013776 TO? ■ HIT4 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

PNP power transistors by hitachi

Abstract: 2SB1392
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

NEC 1357

Abstract: 1354 2SB817 sB1354 2sb941 2SB1376 2sb1015 2SB1132 2SA1561 2sb863
Contextual Info: m % Type No. 2SB 1353 2SB 1354 . tt a— A □ — Ja 2SB 2SB 2SB 2SB 2SB 2SB 1355 1356 1357 ^ 1358 1359 1360 a-A a— a 2SB 2SB 2SB 2SB 2SB 1361 1362 . 1363 1364 1365 & T tö T 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1366 1367 1368 1369 1370 1371 1372 1373 ^ ED

sa1306

Abstract: 2SB793 2sb1370 2SA1306 2SB1186B 2SB1085B 2SA1770 2SA1175 2SA1306A 2SB1212
Contextual Info: - m « Type No. 2SB m 8 6 > 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2 S8 2SB 2SB 2SB 2SB tt □—A □- A 1186A 118 7 / □— A □— A 1188 / □—A 1189 y 119 0 fé T 113 0A *2 T 1191