2SA1428 TRANSISTOR Search Results

transistor A1428

Abstract: toshiba a1428 a1428 2SA1428 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type Ft 2-7D101A 2SA1428 2SC3668
Contextual Info: 2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 1.0 µs (typ.)

toshiba a1428

Abstract: transistor a1428
Contextual Info: 2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 1.0 µs (typ.)

toshiba a1428

Abstract: transistor a1428 A1428 2SA1428 2-7D101A 2SC3668
Contextual Info: 2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1428 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)

toshiba a1428

Abstract: transistor a1428 2-7D101A 2SA1428 2SC3668 A1428
Contextual Info: 2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)

2SA1428

Abstract: 2-7D101A 2SC3668
Contextual Info: 2SA1428 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 428 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 7 .1 M A X • Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A ) High Speed Switching Time : tgtg^l.O/^siTyp.)

Contextual Info: TOSHIBA 2SA1428 2 S A 1 428 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS • • • 7.1 M A X 2.7 M A X Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )

2SA1428

Abstract: 2SC3668
Contextual Info: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1428.

2-7D101A

Abstract: 2SA1428 2SC3668 liaj
Contextual Info: TO SH IB A 2SA1428 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 428 U nit in mm 7.1 MAX 2.7 MAX • Low Collector Saturation Voltage : v C E (sa t)= - 0 .5 V (Max.) ( I c = - 1 A )

2SA1428 transistor

Abstract: 2-7D101A 2SA1428 2SC3668
Contextual Info: TO SH IBA 2SA1428 2 S A 1 428 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS • • • 7.1 MAX 2.7M A X Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )

2SA1428

Contextual Info: T O SH IB A 2SA1428 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 428 Unit in mm Low Collector Saturation Voltage : V CE (sat) = - 0,5 V (Max,) (IC = - 1 A) High Speed Switching Time : tgtg = 1.0/zs (Typ.)

Contextual Info: TOSHIBA 2SA1428 2 S A 1 428 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SW ITCHING APPLICATIONS. 7 .1 M A X • Low Collector Saturation Voltage : v CE(sat) = -0.5V (Max.) (l£ = -1A ) High Speed Switching Time : tstg=1.0/^s (Typ.)

2-7D101A

Abstract: 2SA1428 2SC3668
Contextual Info: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)

2SC3668

Contextual Info: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V(^e (sat)~ 0.5V (Max.) • High Speed Switching Time : tstg= 1.0/^s (Typ.)

Contextual Info: T O SH IB A 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)

c3668

Abstract: transistor c3668
Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW

transistor c3668

Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW

transistor c3668

Abstract: c3668 2SC3668 2-7D101A 2SA1428
Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW

c3668

Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4