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    2N918 CHIP Search Results

    2N918 CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    2N918 CHIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N918 JAN

    Abstract: 2N918 2N918 JANTXV 2n918 transistor
    Text: Data Sheet No. 2N918 Generic Part Number: 2N918 Type 2N918 Geometry 0013 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/301 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-72 case. • Also available in chip form using


    Original     		2N918 MIL-PRF-19500/301 MIL-PRF-19500/301 2N918 JAN 2N918 2N918 JANTXV 2n918 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. Data Sheet No. 2N918 ><>niftBHhr m1 1 I cI ^88888 o % f# 1 l $ id L SEMICONDUCTORS Type 2N918 Generic Part Number: 2N918 G eom etry 0 0 1 3 Polarity NPN Qual Level: JAN - JA NTXV REF: MIL-PRF-19500/301


    OCR Scan     		2N918 MIL-PRF-19500/301 MiL-PRF-19500/301 PDF

    2N918

    Abstract: 2n918 data sheet 2n918 die sd91 2C918 chip type geometry
    Text: Data Sheet No. 2C918 Generic Packaged Parts: Chip Type 2C918 Geometry 0013 Polarity NPN 2N918 Chip type 2C918 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high frequency oscillator, multiplier and driver


    Original     		2C918 2N918 2C918 2N918, 2N918UB, SD918, SD918F, SQ918, SQ918F 2N918 2n918 data sheet 2n918 die sd91 chip type geometry PDF

    2N918 JAN

    Abstract: 2n918 die
    Text: 2N918 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N918J • JANTX level (2N918JX)


    Original     		2N918 MIL-PRF-19500 2N918J) 2N918JX) 2N918JV) 2N918JS) 2N918JSR) 2N918JSF) MIL-STD-750 2N918 JAN 2n918 die PDF

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: 2N918 2N918 JANTX 2n918 die SEMICOA SEMICONDUCTORS npn transistor data
    Text: 2N918 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918J • JANTX level (2N918JX)


    Original     		2N918 MIL-PRF-19500 2N918J) 2N918JX) 2N918JV) MIL-STD-750 MIL-PRF-19500/301 NPN 200 VOLTS POWER TRANSISTOR 2N918 2N918 JANTX 2n918 die SEMICOA SEMICONDUCTORS npn transistor data PDF

    2n918 die

    Abstract: 2N918JS Transistor D 798 2N918 2N918J 2N918JV 2N918JX NPN 200 VOLTS POWER TRANSISTOR 2N918 JANTX 2N918 chip
    Text: 2N918 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N918J


    Original     		2N918 MIL-PRF-19500 2N918J) 2N918JX) 2N918JV) 2N918JS) MIL-STD-750 MIL-PRF-19500/301 2n918 die 2N918JS Transistor D 798 2N918 2N918J 2N918JV 2N918JX NPN 200 VOLTS POWER TRANSISTOR 2N918 JANTX 2N918 chip PDF

    2N918

    Abstract: 2N91 2n918 die
    Text: • JAN level 2N918J • JANTX level (2N918JX) 2N918 • JANTXV level (2N918JV) Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Ultra-high frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E


    Original     		2N918J) 2N918JX) 2N918JV) 2N918 MIL-PRF-19500 MIL-STD-750 MIL-PRF-19500/301 2N918 2N91 2n918 die PDF

    2N918 chip

    Abstract: 2n918 plastic
    Text: DIONICS INC. 65 R U S H M O R E ST., W E ST B U R Y , N Y. 11590 516»997»7474 Dl 3424 • 3423 NPN SILICON MATCHED PAIR TRANSISTOR CHIPS SIMILAR TO 2N918 WITH MATCHING CHARACTERISTICS 100% PROBED DIONICS INC. 65 RUSHMORE ST., WESTBURY, N Y. 11590 Dl 3424 • 3423


    OCR Scan     		2N918 2N918 chip 2n918 plastic PDF

    D0D0341

    Abstract: No abstract text available
    Text: HIGH-FREQUENCY - SMALL SIGNAL NPN v.y^ .* • Guaranteed 100% Probe Tested to These Parameters @ 25°C Volts Min. @ lc = 1 mA l -.=3mA 2N918 DN918 20 M IN 100 M IN V fbo IcBO Volts Min. @ lo = 3mA Volts Min. nA Max. @ I b= @VCB l B= 0 IE = 0 V ce (SAT. V ceo


    OCR Scan     		2N918 DN918 10/tA 20/jA D0D0341 PDF

    geometry 450

    Abstract: 2n918 transistor k 1006 Transistor 2N918 2N3572 2N918 DN-2001 DN918
    Text: " W V -T Guaranteed 100% Probe Tested to These Parameters @ 25°C Vceo hFE Copyrighted 2N918 Volts Min. @ lo = 3mA @ l c= 1/iA lç=3mA 20 IcB O Volts Min. nA Max. @Ib= @VCB 10MA lc=0 I B= 0 lE= 0 M IN Vfbo V ceo Volts Min. @ V C E =1 V i tested on » V sample basis /


    OCR Scan     		2N918 DN918 2N3572 100fiA 140KHz 20/jA 100mA Vcb-10V geometry 450 2n918 transistor k 1006 Transistor 2N918 2N3572 2N918 DN-2001 DN918 PDF

    2N3572

    Abstract: 2N918 DN-2001 DN918 geometry 450
    Text: TRANSISTOR CHIPS 2 HIG H-FREQ UENCY S M A LL SIG N AL NPN 100% Probe Tested to These Parameters @ 25°C n FE V ro V:30 V o lli Min. <9>Vc e =1V @ lc = 1 uA lQ = 3 m A l[= 0 20 2N918 M IN 100 M IN DN918 V f 80 •CBO V o lls M in. @ ls = 3m A V olts M in. 10. A


    OCR Scan     		DN-2001 140KHz 2N918 DN918 100fiA 100mA 2N3572 DN-2001 geometry 450 PDF

    PN3563 equivalent

    Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
    Text: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å


    Original     		CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 22-March PN3563 equivalent 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317 PDF

    ny transistor

    Abstract: 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90
    Text: PROCESS CP317 Central Small Signal Transistor TM Semiconductor Corp. NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS


    Original     		CP317 CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 ny transistor 2N5770 2N2857 2n918 die 2N918 2N5179 2N2857 DIE PN3564 PN3563 BFY90 PDF

    PNP marking VA sot-23

    Abstract: CERSOT-23 sot-23 marking VA
    Text: Transistors CERSOT-23 Case • • • • Hermetically Sealed, Ceramic Leadless Chip Carrier. Ultra Miniature Surface Mount Case. Mounts Directly on Standard SOT-23 Mounting Pads. JANTXV Construction Including Precap Visual Inspection. TYPE NO. CHT918 DESCRIPTION BVceo ICBO< >VCBO h *6 • va • t e VÇSfSAl


    OCR Scan     		CERSOT-23 OT-23 CHT2369A CHT2907A 2N2907A 2N2369A CHT918 2N918 PNP marking VA sot-23 sot-23 marking VA PDF

    smd code marking rf ft sot23

    Abstract: smd 2n2907a 2n2222a smd CERSOT-23 2n2222a sot23 CERSOT23 SA1 SOT23 marking code NF SMD F MARKING
    Text: SMD T ran sisto rs Q CERSOT-23 Case • • • • Hermetically Sealed, Ceramic Leadless Chip Carrier. Ultra Miniature Surface Mount Case. Mounts Directly on Standard SOT-23 Mounting Pads. JANTXV Construction Including Precap Visual Inspection. DESCRIPTION


    OCR Scan     		CERSOT-23 OT-23 CHT918 2N918 2N2222A CHT2222A CHT2369A 2N2369A CHT2907A smd code marking rf ft sot23 smd 2n2907a 2n2222a smd 2n2222a sot23 CERSOT23 SA1 SOT23 marking code NF SMD F MARKING PDF

    2N2222A JANTXV

    Abstract: 2N2907A surface mount CHT2222A CHT918 2N2222A 2N2369A 2N2907A 2N918 CHT2369A CHT2907A
    Text: Transistors * CERSOT-23 Case • Hermetically Seated, Ceramic Leadless Chip Carrier. • Ultra Miniature Surface Mount Case. • Mounts Directly on Standard SOT-23 Mounting Pads. JANTXV Construction Including Precap Visual Inspection. TYPE NO. CHT918 DESCRIPTION


    OCR Scan     		CERSOT-23 OT-23 CHT918 2N918 CHT2222A 2N2222A CHT2369A 2N2222A JANTXV 2N2907A surface mount 2N2222A 2N2369A 2N2907A 2N918 CHT2907A PDF

    CERSOT-23

    Abstract: CHT2222A 2n2222a SOT23 2n2907a sot23 CHT2907A mosfet 2n7002 SOT-23 2N2222A 2N2369A 2N2907A sot-23 2N2222A
    Text: Transistors Q CERSOT-23 Case Hermetically Sealed, Ceramic Leadless Chip Carrier. Ultra Miniature Surface Mount Case. Mounts Directly on Standard SOT-23 Mounting Pads. JANTXV Construction Including Precap Visual Inspection. DESCRIPTION TYPE NO. CHT918 BVCEO ICBO «i VCBO


    OCR Scan     		CERSOT-23 OT-23 CHT918 2N918 CHT2222A 2N2222A CHT2369A 2N2369A CHT2907A 2N2907A 2n2222a SOT23 2n2907a sot23 mosfet 2n7002 SOT-23 2N2222A 2N2369A 2N2907A sot-23 2N2222A PDF

    C1100H

    Abstract: 2N929 2N1613 bc107 transistor c240 Transistor BC107 2N918 BC107 BCY70 C1100L
    Text: Unencapsulated Chip Transistors PNP and IMPN 'C h ip ' Transistors fo r M icro c ircu it Assemblies T ype C h aracte ristics @ 2 5 ° C M a x im u m R atings Discrete fa m ily B V CSO V bv ceo V C1100L C1100H C1200L C1200H C2160 C2180L C2180H C2300L C 2300H


    OCR Scan     		C1100L BC107 C1100H BC107 C1200L BCY70 C1200H C2160 2N918 2N929 2N1613 bc107 transistor c240 Transistor BC107 PDF

    2N918 JANTX

    Abstract: 2n918 die 2N918 2N918UB HP343A 2N918 thermal resistance 2N918 JANS 2n918 set L-41000
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May, 2002. MIL-PRF-19500/301F 16 February, 2002 SUPERSEDING MIL-PRF-19500/301E 4 October 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER


    Original     		MIL-PRF-19500/301F MIL-PRF-19500/301E 2N918 2N918UB MIL-PRF-19500 2N918 JANTX 2n918 die 2N918UB HP343A 2N918 thermal resistance 2N918 JANS 2n918 set L-41000 PDF

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


    OCR Scan     		1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching PDF

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


    OCR Scan     		1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605 PDF

    874-D20

    Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,


    Original     		MIL-PRF-19500/301K MIL-PRF-19500/301J 2N918 2N918UB, MIL-PRF-19500. 874-D20 transformer JS 0432 d 2037 transistor 2n918 die 2N918UB 2N918 thermal resistance PDF

    Fairchild, 2N3019

    Abstract: 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild DN3904 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN AND PNP TRANSISTOR DICE BY APPLICATION Item DEVICE NO. Basic VcEO 'CBO @ VcB hFE @ ic V V Standard nA mA Pol. Device Min Max Min/Max 1 DN2484 NPN 2N2484 60 20 45 250/100/450 2 DN3962 PNP 2N3962 60 20 50 3 DN918 NPN


    OCR Scan     		DN2484 2N2484 DN3962 2N3962 11x24 DN918 2N918 DN3904 2N3904 11x18 Fairchild, 2N3019 2N3906 NPN Fairchild DN2222A transistor 2N2359A fairchild 2n3019 2n2222a fairchild 2N2907 NPN Transistor 2n3904 npn fairchild 2N3904 NPN Transistor PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF