2N7316D Search Results

17741

Abstract: 2N7316D 2N7316H 2N7316R 2E12 Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9140 D, R, H 2N7316D, 2N7316R 2N7316H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 11A, -100V, RDS(on) = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: 2N7316D1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55

Contextual Info: 2N7316D3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55

Contextual Info: HARRIS SEMICOND SECTOR SflE » HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9140 D, R, H M3DES71 □DMST'ìS bl7 H H A S 2N7316D, 2N7316R 2N7316H December 1992 Radiation Hardened P-Channel Power MOSFETs Package Features

Contextual Info: 2N7316D2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55

Contextual Info: m HARRIS U U SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRM9140 D, R, H 2N7316D, 2N7316R 2N7316H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 11 A,-100V, RDS<on> = 0 JOOn TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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