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    2N708 TRANSISTOR Search Results

    2N708 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N708 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N708

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    2N708 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n708

    Abstract: 2n708 transistor transistor 2n708
    Text: 2N708 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N708 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for very fast switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO


    Original     		PDF 2N708 2N708 2n708 transistor transistor 2n708

    2N708

    Abstract: 2N708 JANTX
    Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/312 Devices Qualified Level 2N708 JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation


    Original     		PDF MIL-PRF-19500/312 2N708 O-206AA) -IB21 2N708 2N708 JANTX

    2N708

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/312 Devices Qualified Level 2N708 JAN, JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation


    Original     		PDF MIL-PRF-19500/312 2N708 O-206AA) -IB21 2N708

    2N708

    Abstract: Transistor 2N708 J 2N708
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR 2N708 TO-18 Metal Can Package Switching Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 15 UNIT


    Original     		PDF ISO/TS16949 2N708 C-120 2N708Rev020902 2N708 Transistor 2N708 J 2N708

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 312 Devices Qualified Level 2N708 JAN, JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation


    Original     		PDF MIL-PRF-19500/ 2N708 O-206AA) -IB21

    2n708

    Abstract: 2N708 JANTX
    Text: TECHNICAL DATA 2N708 JANTX Processed per MIL-PRF-19500/312C MIL-PRF QPL NPN SWITCHING SILICON TRANSISTORS DEVICES MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector-Emitter Voltage


    Original     		PDF 2N708 MIL-PRF-19500/312C 2N708 O-206AA) 2N708 JANTX

    Untitled

    Abstract: No abstract text available
    Text: tSe.mi-Condiicko'i tPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON TRANSISTOR 2N708 MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JEDEC TO-18 Lead 1 Emitter Load 2 Base


    Original     		PDF 2N708 -i-21

    Untitled

    Abstract: No abstract text available
    Text: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)


    Original     		PDF 2N708 2N3467 2N2369 2N2369A

    2n915

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION 2N703 BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN MAX *ICES *ICEV NPN AMPL/SWITCH 25 25 5.0 - 2N706C NPN SAT SWITCH 40 2N708 NPN SAT SWITCH 2N709A NPN SAT SWITCH 2N717 2N718A VCB (V) hFE


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N916 2N929A 2N930B 2N947 2n915

    2n4276

    Abstract: No abstract text available
    Text: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40


    Original     		PDF 2N706 2N708 2N744 2N753 2NB34 2N2369 2N2369A JAN2N2369A 10IJA MPS2714 2n4276

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original     		PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    2n706 transistor

    Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l


    OCR Scan     		PDF T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2N2222AA 2n2222 jan 03150 transistor transistor 2N2222

    2222 NPN

    Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
    Text: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905


    OCR Scan     		PDF 2N708 2N709 2N753 NPN50 2222 NPN 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2369A

    Motorola 2n708

    Abstract: Motorola* 2n708 Transistor 2N708
    Text: MOTOROLA SC -CDIODES/OPTÔ} Ï4 d ËT| \ b3b72S5 □ □ 3 0 1 7 e] 1 I - - 6367255 MOTOROLA SC DIODES/OPTO 34C 38179 FLIP-CHIP (continued) - / 7 MMCF708 (silicon) MMCF2369 NPN SWITCH AND A M P LIFIER TRAN SISTO RS Flip-Chip — N P N silicon Annular transistor family for low-current, highswitching applications similar to the 2N708, and 2N2369.


    OCR Scan     		PDF b3b72S5 --------------------34C MMCF708 MMCF2369 2N708, 2N2369. CF2369 CF708 Motorola 2n708 Motorola* 2n708 Transistor 2N708

    TT 2222 npn

    Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
    Text: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904


    OCR Scan     		PDF 2N708 2N709 2N753 000000000000a l000000 T0-18 TT 2222 npn 709a 2n h 2222a 2N698 2222 NPN

    2N 2222 A NPN, TO-18

    Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
    Text: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A


    OCR Scan     		PDF 2N708 2N709 2N753 2N 2222 A NPN, TO-18 2N2222 2n h 2222a 2222a NPN 706a 709a 2222 NPN

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent

    2n2222 itt

    Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
    Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51


    OCR Scan     		PDF VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 2n2222 itt 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711

    2N2475

    Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N2475 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N2369 FERRANTI

    P348A

    Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68
    Text: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50


    OCR Scan     		PDF BFR37 BFW68 30792F BFX18 19041D BFX31 BFY74 19068D BFY75 30795X P348A BFR37 SGS transistor C740 sgs-ates 2n2388 19142e C720 2N2219 transistor

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6

    1501A50

    Abstract: National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237
    Text: bôE ]> • b S ü ll3 G High Speed Saturated Switching Transistors continueai 3 Devices VGEO(SKt (Volts) Min 40 NPN PNP 15 hpE @ lc VC£(*at) (C 4 *» W@»c to# (MHz) (ns) (Volts) (ns) Max Max mA Min fflA Max mA mA Min /n p D(Amfc) Package (mW) @ 25°C


    OCR Scan     		PDF TN2219A T0-237 T0-39 T0-92 O-236* 1501A50 National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237

    2N2369 SOT-23

    Abstract: pn4122 2N708 NPN switching transistor 2N4403 2N3467 2N3905 2N3906 2N4402 2N4403 MMBT3906
    Text: böE ]> • bsoii3 ü 003*1530 aob High Speed Saturateci Switching Transistors continueai ' l*re@lc PMP /IV VC£(sat @(C & mA (MHz) Min Package mA 15 300 T0-237(91) 850 m ft Min mA (Volts) Max 285 150 100 150 0.3 150 !" NPN (ns) Max W (Volts) Min rrM T/-AU R


    OCR Scan     		PDF S0113Ã TN2219A T0-237 2N3467 2N3905 T0-92 2N3906 2N4402 2N2369 SOT-23 pn4122 2N708 NPN switching transistor 2N4403 2N4403 MMBT3906

    2N6369

    Abstract: 2N2483 2N2484 2N2894 2N3209 2N3962 2N3963 2N3964 2N3965 2N708
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS PNP TRANSISTORS FOR LOW LEVEL, LOW NOISE APPLICATIONS Type No. 2N3962 2N3963 2N3964 2N3965 hF EfiXC Plot VCEO mW M MNMAX (»>*) (V) MAX (">*) 60 80 45 60 100/300 100/300 250/500 250/500 0.01 0.01


    OCR Scan     		PDF 2N3962 2N3963 2N3964 2N3965 2N930 2N2483 2N2484 ULTR60 2N708 2N914 2N6369 2N2894 2N3209