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    2N7000 MOSFET Search Results

    2N7000 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    2N7000 MOSFET Price and Stock

    Diotec Semiconductor AG 2N7000

    MOSFET - TO-92 - 60V - 0.2A - N - 0.35W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 24,586
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0316
    		Buy Now

    Microchip Technology Inc 2N7000-G

    MOSFET Transistor - N Channel - 200 mA - 60 V - 5 Ohm - TO-92-3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000-G 1,350
    • 1 -
    • 10 -
    • 100 $0.4291
    • 1000 $0.3255
    • 10000 $0.3158
    		Buy Now

    2N7000 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7000-TR1 equivalent

    Abstract: 2N7000 2n7000 equivalent 2N7000 MOSFET 2N7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents
    Text: Specification Comparison Vishay Siliconix 2N7000KL vs. 2N7000 Description: N-Channel, 60 V D-S MOSFET Package: TO-92 Pin Out: Identical Part Number Replacements: 2N7000KL-TR1 Replaces 2N7000-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free Version) Replaces 2N7000-TR1


    Original     		PDF 2N7000KL 2N7000 2N7000KL-TR1 2N7000-TR1 2N7000KL-TR1-E3 2N7000KL 2N7000 2N7000-TR1 equivalent 2n7000 equivalent 2N7000 MOSFET 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    2N7000L-T92-B

    Abstract: 2N7000L utc 2n7000l 2N7000 MOSFET 2n7000g
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


    Original     		PDF 2N7000 2N7000 400mA QW-R502-059 2N7000L-T92-B 2N7000L utc 2n7000l 2N7000 MOSFET 2n7000g

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N7000 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents


    Original     		PDF 2N7000 2N7000 400mA QW-R201-064

    2N7000 MOSFET

    Abstract: 2n7000
    Text: UTC 2N7000 MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents


    Original     		PDF 2N7000 2N7000 400mA QW-R201-064 2N7000 MOSFET

    2N7000 MOSFET

    Abstract: 2n7000 equivalent 2N7000 2N7000L mosfet 2N7000 2N7000L-T92-B utc 2n7000l 2n7000 data sheet 2N7000L TO-92 mosfet to92 high current
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


    Original     		PDF 2N7000 2N7000 400mA 2N7000L QW-R502-059 2N7000 MOSFET 2n7000 equivalent 2N7000L mosfet 2N7000 2N7000L-T92-B utc 2n7000l 2n7000 data sheet 2N7000L TO-92 mosfet to92 high current

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2N7000 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


    Original     		PDF 2N7000 2N7000 400mA QW-R502-059

    ST2N

    Abstract: STO-23 ST2N transistor 2N7002 MARKING DSS SOT23 2N7000 2N7000G 2N7002 transistor 2n7002 2N7002 SOT23
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L ST2N STO-23 ST2N transistor 2N7002 MARKING DSS SOT23 2N7000 2N7000G 2N7002 transistor 2n7002 2N7002 SOT23

    2N7002 MARKING

    Abstract: 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 • ■ ■ Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L 2N7002 MARKING 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P

    07153

    Abstract: 03aa02
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		PDF 2N7000 2N7000 03ab40 03ab30 771-2N7000AMO 07153 03aa02

    2N7002

    Abstract: 2N7002 MARKING ST2N 2N7000 MOSFET 2n7000 2N7000G 2N7002 SOT23 codes marking st2n 2n7000 equivalent 2n7000 equivalents
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L 2N7002 2N7002 MARKING ST2N 2N7000 MOSFET 2n7000 2N7000G 2N7002 SOT23 codes marking st2n 2n7000 equivalent 2n7000 equivalents

    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA

    2N7002 SOT23

    Abstract: ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		PDF 2N7000 2N7002 OT23-3L, OT23-3L JESD97. 2N7000, 2N7002 SOT23 ST2N transistor 2N7002 ST2N 2N7000 codes marking st2n 2N7002 MARKING marking L2 SOT23 6 2N7002- SOT23 MOSFET codes marking 2N7002

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L

    VQ1000J

    Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429

    ST2N

    Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L ST2N 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97

    marking BS SOT23

    Abstract: 2N7000 circuits
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application


    Original     		PDF 2N7000 2N7002 OT23-3L, OT23-3L marking BS SOT23 2N7000 circuits

    code for 2n7002

    Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J O-226AA, BS170 code for 2n7002 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 VQ1000P SILICONIX 2N7002

    ST2N transistor

    Abstract: 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		PDF 2N7000 2N7002 OT23-3L, OT23-3L JESD97. 2N7000, ST2N transistor 2N7000 ST2N 2N7002 st2n codes marking st2n low vgs mosfet to-92 transistor ST2N 2N7000 MOSFET 2N7002 JESD97

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8Ω @10V LOW Qg LOW THRESHOLD DRIVE


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L

    2n7002

    Abstract: mosfet 2N7000 2N7000
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 Q Q Q Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V LOW Qg


    Original     		PDF 2N7000 2N7002 OT23-3L OT23-3L 2n7002 mosfet 2N7000 2N7000

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES • Fast switching sp eed s • TO-92 Package PRODUCT SUMMARY Part Number V ds RöS on b(on) 2N7000 60V 5.0 Q 200 mA MAXIMUM RATINGS Sym bol 2N7000 Drain-Source Voltage (1) Characteristic V dss 60 vac Drain Gate Voltage (Rgs =1.0Mfi) (1)


    OCR Scan     		PDF 2N7000

    Small Signal MOSFET

    Abstract: No abstract text available
    Text: N-CHANNEL SMALL SIGNAL MOSFET 2N7000 FEATURES TO-92 1 • Fast switching speeds • TO-92 Package ' V ’ i 1. S o u rc e 2. Gate 3. Drain PRODUCT SUMMARY Part Number V ds R d S o ii ta< on ) 2N7000 60V 5.0 n 200 mA MAXIMUM RATINGS Characteristic Drain-Source Voltage (1)


    OCR Scan     		PDF 2N7000 2N7000 Small Signal MOSFET