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    onsemi 2N6668G

    POWER 8A 80V DARLINGTON PNP
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    2N6668G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6668G

    Abstract: 1N5825 2N6387 2N6388 2N6667 2N6667G 2N6668 MSD6100
    Text: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc


    Original     		PDF 2N6667, 2N6668 2N6667 O-220AB 2N6387, 2N6388 2N6667/D 2N6668G 1N5825 2N6387 2N6388 2N6667 2N6667G 2N6668 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc


    Original     		PDF 2N6667, 2N6668 2N6667 220AB 2N6387, 2N6388 2N6667/D

    Untitled

    Abstract: No abstract text available
    Text: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc


    Original     		PDF 2N6667, 2N6668 2N6667 O-220AB 2N6387, 2N6388 2N6667/D

    2N6668G

    Abstract: 2N6388 2N6387 2N6667 2N6667G 2N6668 MSD6100 1N5825 darlington transistor with built-in temperature c
    Text: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and low speed switching applications. •ăHigh DC Current Gain - http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc •ăCollector-Emitter Sustaining Voltage - @ 200 mAdc


    Original     		PDF 2N6667, 2N6668 2N6667 O-220AB 2N6387, 2N6388 2N6667/D 2N6668G 2N6388 2N6387 2N6667 2N6667G 2N6668 MSD6100 1N5825 darlington transistor with built-in temperature c