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    2N5812 Price and Stock

    Central Semiconductor Corp 2N5812

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.75A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-92
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    Quest Components 2N5812 15
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    2N5812 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5812 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N5812 Central Semiconductor NPN EPOXY Transistors Scan PDF
    2N5812 Central Semiconductor NPN Epoxy - Switching and General Purpose Transistors Scan PDF
    2N5812 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5812 Micro Electronics SILICON AF MEDIUM POWER TRANSISTOR Scan PDF
    2N5812 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5812 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5812 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5812 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5812 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5812 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5812 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5812 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5812 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5812 Semico Medium Power Transistors Scan PDF
    2N5812 Semico Medium Power Amplifiers and Switches Scan PDF
    2N5812 Sprague Semiconductor Data Book 1977 Scan PDF

    2N5812 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5963

    Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
    Text: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP


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    PDF O-92-18R 2N5812 2N5813 2N5816 2N5817 MPS3706 MPS3707 MPS3708 2N5963 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830

    vane air flow sensor

    Abstract: pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503
    Text: Application Note 27701B* APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro MicroSystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


    Original
    PDF 27701B* 362-A vane air flow sensor pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503

    2N3480

    Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849


    Original
    PDF E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712

    TRIAC 40669

    Abstract: hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor
    Text: Application Note 27701B* HALL-EFFECT IC APPLICATIONS GUIDE APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches


    Original
    PDF 27701B* 362-A TRIAC 40669 hall effect sensor ugn3503 Magnetic Tachometer with ug*3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


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    PDF

    2SC875 E

    Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60


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    PDF 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2SC875 E 2SC875 2N5822 2SB504A

    2N3638

    Abstract: 2N3638A replacement for 2n2905 2N5816 2N5815 HS5810 2n2905 replacement 2N6003 2N5819 2N6006
    Text: NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO 18 PACKAGE @ 10mA Min. V 'E- (i'll 1 @ 500mA, 50mA Max. (V (V) VCEO hFF (a) 2V, 2mA Type 2 N 5810 60-200 * 2N5812 150-500 * 2 N 5814 60-120 C cb @ 10V Typical Pt Ta = 2!5°C (mW) Typical


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    PDF 500mA, 2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N3638 2N3638A replacement for 2n2905 HS5810 2n2905 replacement 2N6003 2N5819 2N6006

    2N3638 equivalent

    Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
    Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813


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    PDF 500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 equivalent 2N2219 transistor substitute 2N3638 transistor 2N5815 of 2n2905 1N4532 hs5810

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


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    PDF 2N5911/2N5912 367mW 500mW 2N5911 2N5912 DDDCH33 300nA,

    2N5815

    Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
    Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50


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    PDF 2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236

    2N5816

    Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B


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    PDF 2N4953 O-92B 2N4954 2N4969 O-106 2N4970 2N4971 2N5816 2N5815 2N5225 2N5143 2N5447 2N5226 2N5450 2N5818 2N5819

    2N3638

    Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
    Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150


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    PDF 500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 2N5815 2N3638A HS5810 2N5822

    2N5818

    Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
    Text: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


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    PDF 2N5810 2N5819 2N5819 O-92F 2N5810, 2N5811, 2N5814, 2N5818 2N5815 2N5814 2N5816 2N5811 BOX69477

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-92 Case Continued TO-92 T Y P E NO. FAMILY LEAD CO DE VCBO vCEO ItPE v E B O tCB O v C B O (V) (V) TO-92-18R MIN *VCES MIN MIN (V) @ V CE (V) (V) e ic (mA) TO-92-18R V CE(S<fcT) ® *< (V) (mA) ’te e s MIN *CEV M AX Cob


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    PDF O-92-18R 2N5812 2N5813 2NS816 2NS817 2N5818 2N5819 2N5822 2N5823

    2N3859

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )


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    2N5819

    Abstract: No abstract text available
    Text: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


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    PDF 2N5810 2N5819 O-92F 2N5810 2N5819 O-92F 2N5811, 2N5810, 2N5814,

    2N6008

    Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6008 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014

    d33025

    Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N6000 2n3391 2N6006 2N6002 GET3014 GET3638 2n2926

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015

    2N5225

    Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
    Text: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA­ CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE­ MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P


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    PDF 2N5042 2N5220 2N5221 2N5225 2N5226 2N5354 2N5355 2N5356 2N5365 2N5366 2N5815 2N5816 2n5814 2N5822 2N5420

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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