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    2N5700 Search Results

    2N5700 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5700 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5700 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5700 Unknown Transistor Replacements Scan PDF
    2N5700 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5700 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5700 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5700 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5700 Transistor International Transistor Selection Guide Scan PDF

    2N5700 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet PDF

    rf power transistors

    Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
    Text: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60


    OCR Scan     		2N5645 MT-72 2N4440 2N5636 MT-71 N4040 O-117 2N5774 O-129 2N3733 rf power transistors TO129 SC2600 2N5646 MT-72 package 2N5924 PDF

    042c1

    Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141


    Original     		2SC643A 2SC1892 S01530 2S0898 TRM2014 TRM2504 TRM3014 TRM3504 TRM4014 042c1 2S090 SSP62 mrf486 2S0882 2sc2906 042C3 B0329 THA13 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2sd898 hitachi

    Abstract: KT816A 2SC2906A BUV36 2SD90 BUV36A 2n6095 2N5700 MJE8500 THB13
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Max (A) (V) ON) PD hFE Min *T (HZ) r 'CBO Max (A) Max (s) (CE)ut Max (Ohms) Top«r Max Package Style (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . -15 . .


    Original     		SDT801 SDT701 2SC3178 2SC3059 MJE1320 BUV36A 2SD1301 2SD897A 2sd898 hitachi KT816A 2SC2906A BUV36 2SD90 2n6095 2N5700 MJE8500 THB13 PDF