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    Microchip Technology Inc 2N5584

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    2N5584 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5584 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5584 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5584 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5584 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5584 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5584 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5584 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5584 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5584 National Semiconductor Wide Band-Low Noise Dual JFETs Scan PDF
    2N5584 National Semiconductor Wide Band - Low Noise Dual JFETs Scan PDF
    2N5584 PPC Products Transistor Short Form Data Scan PDF
    2N5584 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N5584 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5584 Solitron Devices Planar Power Transistor Scan PDF

    2N5584 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5330

    Abstract: 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 SDT6338 SDT6339 SDT6340 SDT6341 SDT8151 SDT8152 SDT8153 SDT8154 SDT8155 SDT8156 SDT8157 SDT8158 SDT8159 SDT8301 SDT8302 SDT8303 SDT8304 SDT44301


    Original
    PDF 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 2N5330 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original
    PDF B440355 S4H03SS D00D11E 2N3265 2N3266 2N3597 2N3598 2N3599 2N3846 2N3847 to63

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original
    PDF B440355 S4H03SS D00D11E SPHV405 SPHV406 SPHV407 SPHV408 SPHV409 SPHV420 SPHV421 to63

    2N2773

    Abstract: J175 BUS24A
    Text: POWER SILICON NPN Item Number Part Number Min I C 5 10 15 20 Semicoa PPC Product Solitron See Index Sid St Dvcs See Index See Index Semelab Solitron PPC Product 30 30 30 30 30 30 30 30 30 30 150 150 150 150 160 160 160 175 175 175 10 15 15 20 20 20 20 30


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    PDF 3204AE StR-5/16 2N2773 J175 BUS24A

    2SC2128

    Abstract: 2N2773 2N3055C
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)


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    PDF 109T2 SML44311 SDT44311 2N3055C 2N3772C PN5934 2N5934 O-218AA 2SC2128 2N2773

    2N4211

    Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
    Text: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110


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    PDF 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228

    2N5585

    Abstract: 2N5586 2N5584 2N5911 2N5912 NF5011 NPD5584 NPD5586 U440 U441
    Text: This Material National Semiconductor N-ChanneIJFETs CO m Wide Band—Low Noise Dual JFETs n Copyrighted o Operating Conditions for these Characteristics Typ« No. By 2N5584 2N5585 2N5586 2N5911 2N5912 Op. Vqs1-2 Drift C tuC ruB V Gqu CMRR Vfl* Vp Gou loss Gf» GqicI-2 Iq H g 2 Process Pkg.


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    PDF 2N5584 2N5585 2N5586 2N5911 2N5912 NPD5584 NP05585 NPD5586 NF5011 NF5012 U440 U441

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


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    PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    2N5330

    Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


    OCR Scan
    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N5330 2N5672 2N6258 2N2824 2N2825 2N3771 2N3846

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    PDF

    2N5330

    Abstract: No abstract text available
    Text: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100


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    PDF 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771 2N5330

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


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    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N2824 2N2825 2N3771

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2N2823

    Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
    Text: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts


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    PDF 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 2N2823 2N6273 2N6322 2N6323 2N2824 2N2825 2N3771 2N3846

    2n5480

    Abstract: No abstract text available
    Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111


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    PDF O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480

    2N5586

    Abstract: 2N5585 2N5911 2N5584 2N5912 NF5011 NPD5584 NPD5586 U440 U441
    Text: National Semiconductor N-Channel JFETs co m Wide Band—Low Noise Dual JFETs n o Operating Conditions for these Characteristics VqS1-2 Drift C fu C n , BV G o. CMRR Vfl» •css Gfe Go k i _2 ■q H G 2 Go n G f. Vr R Of* ■g Igss loss Process Pkg. Vos iftV /X


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    PDF 2N5584 2N5585 2N5586 2N5911 2NS912 NPD5584 NPD5585 NPD5586 NF5011 NF5012 2N5912 U440 U441

    2N6960

    Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
    Text: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50


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    PDF 2N6546 2N6547 SDT14411 SDT14412 SDT14413 SDT14414 SDT14415 2N6246 2N6247 O-114 2N6960 TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756

    Untitled

    Abstract: No abstract text available
    Text: e l e c t r o n i c s in c . SECTION 2 COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case VcBO Volts 2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 TO -63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 v CEO su s Volte Ve b o Volts 7 7 6 6 6 6 90 60 100


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    PDF 2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 2N2823 2N2824 2N2825 2N3771

    N4003

    Abstract: SDT8756 SOT87 TO114 2N5330 SDT3204 SDT5835 SDT5836 SDT5837 SDT5838
    Text: 41 SILICON POWER TRANSISTORS S A T U R A T IO N V O L T A G E S @ C U R R E N T G A IN @ TYPE NUM BER C A SE TYPE V CBO V VCEO V EBO v I v hF E MIN. I M AX. 'c VCE V C E s V BE(s) V 'c 'b A v 5.0 10.0 10.0 10.0 10.0 10.0 1.75 .40 .40 2.50 1.20 1.20 10.0 10.0


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    PDF SDT3204 SDT5835 SDT5836 SDT5837 SDT5838 SDT5865 O-114 SDT5866 SDT5867 N4003 SDT8756 SOT87 TO114 2N5330