2N52 Search Results

2N5222

Abstract: A6T5222 A6T52
Contextual Info: TYPES 2N5222, A6T5222 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 9 , M A R C H 1973 S IL E C T t T R A N S IS T O R S t • For RF Am plifier, Mixer, and Video IF Applications in Radio and Television Receivers • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N5227

Abstract: a5t5227
Contextual Info: TYPES 2N5227, A5T5227 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L S 731 1927, M A R C H 1973 S IL E C T t TR A N S IS TO R S ! • For Low-Level, Small-Signal, General Purpose Am plifier and Oscillator Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N5221

Contextual Info: TYPES 2N5221, AST5221 P N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 731 1 9 2 4 , M A R C H 1973 S IL E C T t T R A N S IS T O R S ^ FOR G E N E R A L PU R PO SE A M P L IF IE R A N D LOW-POWER A U D IO A P P L IC A T IO N S • For Complementary Use with N-P-N Types 2N5220, A5T5220

2N5264

Abstract: 2N526
Contextual Info: Product Specification www.jmnic.com 2N5264 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・DC-DC convertor ・Solid state relay ・General purpose power amplifiers

2N5293

Abstract: 2N5295 2N5297
Contextual Info: Product Specification www.jmnic.com 2N5293 2N5295 2N5297 Silicon NPN Power Transistors DESCRIPTION ・・With TO-220 package ・High power dissipation APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

2SC1815GR

Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max

2N5296 pin configuration

Abstract: c 5296 5298 2N5298 2N5294 2N5296
Contextual Info: 2N5294, 2N5296, 2N5298 CDU 2N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORS M edium Pow er Switching and A m plifier A pplications DIM A B C D E F G H J L a K L M N MIN 14.42 9,63 3,56 - 1.15 3,75 2,29 2,54 - MAX Î6.5 1 10.67 4.83 0.90 1.40 3.88 2.79 3.43

Contextual Info: DIGITRON SEMICONDUCTORS 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N5210

Abstract: transistor 2N5210 2N5209
Contextual Info: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage

Contextual Info: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5

2N5232

Abstract: 2N5232A transistor data cd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N5232 2N5232A TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION Collector Emitter Voltage

2N5210

Contextual Info: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol

SCR C38

Abstract: 2N6881 C38H c38d C3SA 2N682 2N683 c231 C35U C38F
Contextual Info: - C230-2 C231-3 - C228-9 C35 C38 - C137 2N 681 -92 * - _ 2N 3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B °C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 150 300 GE TYPE JEDIEC ELEC TRIC AL SPECIFICATIONS

2N404

Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
Contextual Info: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

D38S1-4

Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

transistor ah

Abstract: 2N5241 BDX 625 bdx 540 1N914 2N3440 TIP 110 transistor TIP 75 transistor
Contextual Info: TYPE 2N5241 N-P-N SILICON POWER TRAN SISTO R H IG H V O L T A G E , H IG H FO RW A R D £ N D REVERSE ENERGY D ESIG N E D FOR IN D U S T R IA L A N D M IL IT A R Y A P PLIC A TIO N S 125 W at 62.5°C Case Temperature 4 00 V Collector-Emitter Off-State Voltage

2N6881

Abstract: CA37P GE C228 C137PB 2N682 2N683 C35F C35U C38F C38U
Contextual Info: - C230-2 C231-3 - C228-9 C35 C 38 - C137 2N 681-92* - _ 2N3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B ° C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 150 300 GE TYPE JEDIEC E LEC TR IC A L SPECIFICATIONS

TA2765

Abstract: 2N5240 TA2765A 2n5239 Pt-100W
Contextual Info: File Number HARRI S 321 SEHICON] 2N5239, 2N5240 SECTOR SbE ]> • M3Q5S71 High-Voltage, Silicon N-P-N T ransistors D04Q455 731 B H A S ^^3 ~/3 For High-Speed Switching and Linear-Amplifier Applications in Industrial and Commerical Service Features: ■ H igh voltage ratings: Vcer[si/s]

2N5237

Contextual Info: Data Sheet No. 2N5237 Generic Part Number: 2N5237 Type 2N5237 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/394 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case.

PDTC

Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
Contextual Info: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0