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    2N5089 POWER Search Results

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    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    2N5089 POWER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5089

    Abstract: No abstract text available
    Text: 2N5089 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5089 Availability Online Store


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    2N5089 2N5089 STV3208 LM3909N LM3909 PDF

    2N5088 equivalent

    Abstract: 2N5088 2N5089
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


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    ISO/TS16949 2N5088 2N5089 C-120 2N5088 equivalent 2N5088 2N5089 PDF

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    Abstract: No abstract text available
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for


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    2N5086 2N5088 2N5087 2N5089 T0-92A 2N5086, 2N5088; PDF

    2N5089 equivalent

    Abstract: 2n5088 alternative transistor 2n5088 equivalent 0/2N5089 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 35 30 Vdc


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    2N5088 2N5089 2N5089 226AA) 2N5089 equivalent 2n5088 alternative transistor 2n5088 equivalent 0/2N5089 equivalent PDF

    2N5088BU

    Abstract: No abstract text available
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088BU PDF

    2N5088 equivalent

    Abstract: 2N5088 2N5089
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


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    2N5088 2N5089 C-120 2N5088 equivalent 2N5088 2N5089 PDF

    2N5089

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


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    2N5088 2N5089 C-120 2N5089 PDF

    2N5088 Cross Reference

    Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild PDF

    2N5081

    Abstract: transistor 2N5086 2N5086 2n508 2n5088 transistor 2N5087 2N5088 2N5089
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. IBC (PNP) ABSOLUTE MAXIMUM RATINGS


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    2N5086 2N5087 2N5088 2N5089 2N5086, 2N5088; T0-92A 2N5086 2N5081 transistor 2N5086 2n508 2n5088 transistor 2N5087 2N5089 PDF

    TIC 1160

    Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 OT-23 TIC 1160 2N5088 equivalent 2n5088 transistor CBVK741B019 F63TNR MMBT5089 PN2222N PDF

    2N5089

    Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 OT-23 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power MMBT5089 4973P 2N5088 Fairchild PDF

    2N5088 Fairchild

    Abstract: No abstract text available
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 OT-23 2N5088 Fairchild PDF

    2n5089 spice

    Abstract: 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2n5089 spice 2N5088 Fairchild PDF

    2N5088

    Abstract: transistor 2N5088 2N5088 equivalent 2n5088 transistor 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 OT-23 transistor 2N5088 2N5088 equivalent 2n5088 transistor CBVK741B019 F63TNR MMBT5089 PN2222N PDF

    2N5089

    Abstract: No abstract text available
    Text: SMALL SIGNAL GENERAL PURPOSE TRANSISTORS 2N5089 NPN Epitaxial Silicon Transistors Features • Application for Amplifier Circuit, Switching Circuit, Inverter • RoHS Compliant Maximum Ratings T Ambient=25ºC unless noted otherwise Symbol Description Value


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    2N5089 2N5089 PDF

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    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR N PN GEN ERAL PU RPOSE AM PLI FI ER ̈ DESCRI PT I ON The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A ~ 50mA.


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    2N5088/2N5089 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R 2N5089L-T92-B 2N5089G-T92-B 2N5089L-T92-K PDF

    2N5087

    Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


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    2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2N5087 equivalent 2n5088 transistor PDF

    2N5088 equivalent

    Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    2N5088 2N5089 2N5086 2N5087 100Hz, 2N5088 equivalent ST transistor 2n5088 transistor 2N5087 2N5089 hfe 300 PDF

    2N5089 equivalent

    Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    2N5088 2N5089 2N5086 2N5087 100Hz, 2N5089 equivalent 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 PDF

    2N5088 equivalent

    Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    2N5088 2N5089 2N5086 2N5087 2N5088 equivalent 2n5088 transistor 2N5089 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024 PDF

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


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    2N5088 2N5089 2N5086 2N5087 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 st2n5088 2N5088 power PDF

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION


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    2N5088 2N5089 C-120 PDF

    hFE-200 to-92 npn

    Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


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    2N5086 2N5087 2N5088 2N5089 100Hz, hFE-200 to-92 npn 2N5087 2n5088 transistor hFE-200 transistor PNP 2N5089 hFE-200 PDF

    2N5088

    Abstract: 2N5088G 2N5089 2N5089L-T92-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A ~ 50mA. 1 TO-92


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    2N5088/2N5089 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R 2N5089L-T92-B 2N5089G-T92-B 2N5089L-T92-K 2N5088 2N5088G 2N5089 PDF