2N4398
Abstract: 4399 2N5745 2n5301 2N4399
Text: SavantIC Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5301/5302/5303 ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching
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2N4398
2N4399
2N5745
2N5301/5302/5303
2N4398
2N4399
4399
2N5745
2n5301
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2N4399
Abstract: 2N4398 2N4399 equivalent 2N4398 equivalent 2N5301 2n303 2N4396 2N5302 2N5745
Text: ON Semiconductort PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — • • IC = 15 Adc, VCE sat = 1.0 Vdc (Max) 2N4398,99 = 1.5 Vdc (Max) 2N5745
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2N4398
2N4399
2N5745
2N4398
2N5301,
2N5302,
2N303
r14525
2N4398/D
2N4399
2N4399 equivalent
2N4398 equivalent
2N5301
2n303
2N4396
2N5302
2N5745
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2N4398 MOTOROLA
Abstract: 2N4399 MOTOROLA 2N5745 motorola 300 watts amplifier Bipolar Junction Transistor 2N5301 2N4399 ic amplifier Motorola Bipolar Power Transistor Data npn transistors,pnp transistors
Text: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage —
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2N4398/D*
2N4398/D
2N4398 MOTOROLA
2N4399 MOTOROLA
2N5745 motorola
300 watts amplifier
Bipolar Junction Transistor
2N5301
2N4399
ic amplifier
Motorola Bipolar Power Transistor Data
npn transistors,pnp transistors
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2N4398
Abstract: 2N5745 4399 2N4399 2n5301
Text: Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching
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2N4398
2N4399
2N5745
2N5301/5302/5303
2N4398
2N4399
2N5745
4399
2n5301
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2N4398
Abstract: 2N5745 2N4399 2n5301
Text: JMnic Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching
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2N4398
2N4399
2N5745
2N5301/5302/5303
2N4398
2N4399
2N5745
2n5301
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2N4399
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N4399 JANTX, JTXV 2N5745 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/433 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N4399
2N5745
MIL-PRF-19500/433
1000C
2N4399
2N5745
O-204AA)
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2N4399
Abstract: all ic data all ic datasheet 1000C 2N5745 MAX401-5
Text: TECHNICAL DATA 2N4399 JANTX, JTXV 2N5745 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/433 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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2N4399
2N5745
MIL-PRF-19500/433
1000C
2N4399
2N5745
all ic data
all ic datasheet
1000C
MAX401-5
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2N4399
Abstract: 1000C 2N5745
Text: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/433 Devices Qualified Level 2N4399 JANTX JANTXV 2N5745 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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MIL-PRF-19500/433
2N4399
2N5745
1000C
O-204AA)
2N4399
1000C
2N5745
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 433 Devices Qualified Level 2N4399 JANTX JANTXV 2N5745 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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MIL-PRF-19500/
2N4399
2N5745
1000C
O-204AA)
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audio output TRANSISTOR PNP
Abstract: BU108 MJ15022 equivalent 2SA1046 MJ2955 2n3055 200 watts amplifier 2SC7 OF TRANSISTOR tip122 mj15004 equivalent 2SD114 BDX54
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99
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2N4347
2N3442)
2N4398
2N5745
2N5301,
2N5302,
2N5303
2N4399
audio output TRANSISTOR PNP
BU108
MJ15022 equivalent
2SA1046
MJ2955 2n3055 200 watts amplifier
2SC7
OF TRANSISTOR tip122
mj15004 equivalent
2SD114
BDX54
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2n4399
Abstract: 2N4398
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use In amplifier and switching applications. FEATURES: *DC Current Gain Specified-1.0 to 30 A
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2N4398
2N4399
2N5745
2N4398,
2N5301
2N5302
2N5303
2n4399
2N4398
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2n4399
Abstract: No abstract text available
Text: 2N4398 2N4399 2N5745 PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4398 series types are PNP silicon power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER
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2N4398
2N4399
2N5745
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Untitled
Abstract: No abstract text available
Text: 2N4399 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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2N4399
O204AA)
16-Jul-02
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2N4399
Abstract: No abstract text available
Text: 2N4399 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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2N4399
O204AA)
31-Jul-02
2N4399
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Untitled
Abstract: No abstract text available
Text: 2N4399+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N4399
time400n
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Untitled
Abstract: No abstract text available
Text: 2N4399+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N4399
time400n
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Untitled
Abstract: No abstract text available
Text: 2N4399+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N4399
time400n
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2N4398
Abstract: 2N4399 2N4399 pnp 2N5745
Text: 2N4398, 2N4399, 2NS745, PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) ^C E O (SU S ) 2N4398 2N4399 2N5745 Collector Cutoff Current
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2N4398,
2N4399,
2NS745,
2N4398
2N4399
2N5745
2N4398
2N4399
2N4399 pnp
2N5745
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2N4399
Abstract: 2N4398 2N5301 2N5302 2N5303 2N5745
Text: PNP SILICON HIGH-POWER TRANSISTORS PNP 2N4398 2N4399 2N5745 General Purpose use in amplifier and switching applications. Boca Semiconducotor Corp. fe a tu re s : *DC Current Gain Specified-1.0 to 30 A * Low Collector-Emitter Saturation Voltage - RSP 75 V Max @ 'c = 10 A - 2N4398, 2N4399
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2N4398,
2N4399
2N5745
2N5301
2N5302
2N5303
2N4398
2N5303
2N5745
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23741
Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967
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PNP-11
23741
PPC 2n5683
JANTX2N6379
JANTX2N6437
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1501-33
Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001
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Tc-25Â
2N5881
2N5882
2NS879
2N5880
2N5301
2NS302
2N5303
2N5885
2N5886
1501-33
2N5686
2N5860
2N5745
45020
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2N4398
Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
Text: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3
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2N4398
2N4399
2N6329
2N6330
2N6331
AP1020
AP1021
AP1048
AP1049
AP1050
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2N4398
Abstract: 2n4399 4398m
Text: TYPES 2N4398, 2N4399 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS CD H F O R P O W ER -A M P LIFIER AND HIGH -SPEED -SW ITCHING A P P LIC A T IO N S D ES IG N ED FO R C O M P LE M EN T A R Y USE WITH 2N5301, 2N5302 c < r "D r m m H to • 200 Watts at 25° C Case Temperature
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2N4398,
2N4399
2N5301,
2N5302
2N4398
4398m
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TIP 110 transistor
Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature
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2N5301,
2N5302,
2N5303
2N5302
2N4398,
2N4399
2N5302)
2N5303)
TIP 110 transistor
TIP 22 transistor
TIP 41 transistor
2N5301
TIP 122 transistor APPLICATION circuit
PIT 3055
TIP 122 transistor
TRANSISTOR tip 127
transistor tip 3055
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