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    2N4123 TRANSISTOR Search Results

    2N4123 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N4123 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4124

    Abstract: 2N4123 2N4124G 2N4123RLRM
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage VCEO VCBO


    Original     		PDF 2N4123, 2N4124 2N4123 2N4124 2N4123 2N4124G 2N4123RLRM

    2N4124G

    Abstract: 2N4123 2N4123RLRM 2N4124
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage


    Original     		PDF 2N4123, 2N4124 2N4123 2N4123/D 2N4124G 2N4123 2N4123RLRM 2N4124

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 General Purpose Transistor. Collector-emitter Voltage: Vceo = 3. 1 of 1 Home Part Number: 2N4123 Online Store 2N4123 Diodes G eneral Purpo se Trans is t o r. C o llec t o r-em it t er Vo lt age: Vc eo


    Original     		PDF 2N4123 com/2n4123 2N4123

    Untitled

    Abstract: No abstract text available
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage


    Original     		PDF 2N4123, 2N4124 2N4123 2N4123/D

    2N4123

    Abstract: 2N4123RLRM 2N4124 2N4124G
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123


    Original     		PDF 2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4123RLRM 2N4124 2N4124G

    2n4123

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


    Original     		PDF 2N4123/D 2N4123 2N4124 2N4124 226AA) 2N4123/D*

    2N4124 MOTOROLA

    Abstract: 2N4123 MOTOROLA 2N4124 2N4123
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


    Original     		PDF 2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 MOTOROLA 2N4123 MOTOROLA 2N4124

    2N4123

    Abstract: 2N4124 2N4123 MOTOROLA
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


    Original     		PDF 2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 2N4123 MOTOROLA

    2n4123 transistor

    Abstract: 1n916 fairchild
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		PDF 2N4123 2n4123 transistor 1n916 fairchild

    1N916

    Abstract: 2N4123 CBVK741B019 F63TNR PN2222N
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		PDF 2N4123 1N916 2N4123 CBVK741B019 F63TNR PN2222N

    2N4123

    Abstract: 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value Unit VCEO 2N4123 2N4124 Collector−Base Voltage 30 25 VCBO


    Original     		PDF 2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 40


    Original     		PDF 2N4123 2N4124 2N4124 226AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


    Original     		PDF 2N4123 O-92-3 2N4123

    2N4123

    Abstract: 2N4124 2N4124 pin configuration 2n4123 npn transistor
    Text: 2N4123 2N4124 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Silicon General l Through Hole TO-92 Package l Capable of 625mWatts of Power Dissipatio Purpose Transistor 625mW Pin Configuration Bottom View


    Original     		PDF 2N4123 2N4124 625mWatts 625mW 2N4123 2N4124 2N4124 pin configuration 2n4123 npn transistor

    2N4123

    Abstract: 2n4124 2n4123 npn transistor
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: V ceo * 2N4123:30V 2N4124:25V • Collector Dissipation: Pc max »625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic Collector-Base Voltage


    OCR Scan     		PDF 2N4123/4124 2N4123 2N4124 625mW 2N3904 2n4123 npn transistor

    2n4124

    Abstract: 2N4123 MOTOROLA 2N4123
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol 2N4123 2N4124 25 Vdc 30 Vdc VCEO 30 Collector-Base Voltage VCBO 40 Emitter-Base Voltage


    OCR Scan     		PDF 2N4123 2N4124 2N4124 2N4123 MOTOROLA

    2N3904

    Abstract: 2n4123 transistor 2N4123
    Text: Transistors 2N4123 USHA INDIA LTD GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V Ceo = 2N4123: 30V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 40


    OCR Scan     		PDF 2N4123 2N4123: 625mW 2N3904 100MHz 2n4123 transistor 2N4123

    Untitled

    Abstract: No abstract text available
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123


    OCR Scan     		PDF 2N4123/4124 2N4123: 2N4124: 625mW 2N4124 2N3904 10OKHz

    2N4123

    Abstract: No abstract text available
    Text: 2N4123 2N4124 MAXIMUM RATINGS Rating Symbol 2N4123 2N 4124 C o lle ctor-E m itter Voltage v CEO 30 25 Vdc C ollector-Base Voltage v CBO 40 30 Vdc Em itter-Base V o ltage U n it v EBO 5.0 Vdc C o lle ctor C u rrent — C o ntinuous fC 200 m A dc Total Device D issipa tion a T ^ = 25°C


    OCR Scan     		PDF 2N4123 2N4124 O-226AA)

    Untitled

    Abstract: No abstract text available
    Text: 45E » • SDTTESD 0017752 ft ■ T O S H TOSHIBA TRANSISTOR_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2N4123 ~3'-l $ (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES:


    OCR Scan     		PDF 2N4123 2N4125 100MHz

    2n3904 2n3906

    Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
    Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64


    OCR Scan     		PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015

    2N4123

    Abstract: 2N4124 2N4126 2N4125 2n4123 npn transistor
    Text: 2N 4123 PLANAR EPITAXIAL GENERAL DESCRIPTION : The 2N4123 and 2N4124 a re NPN s ilic o n p la n a r e p ita x ia l t r a n s i s t o r s designed fo r g e n e ra l purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re complementary to PNP 2N4125 and 2N4126.


    OCR Scan     		PDF 2N4123 2N4124 2N4125 2N4126. O-92A 2N4123) 2N4126 2n4123 npn transistor

    2N4123

    Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
    Text: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re


    OCR Scan     		PDF 2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 2N4123 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4126 2n4123 pnp

    n3906

    Abstract: transistor ZTX302 MPS3693 945 MOTHERBOARD CIRCUIT diagram MPS3710 ZTX108 BCY59P MPS3704 MPS3705 MPS6532
    Text: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f


    OCR Scan     		PDF MPS3704\ ZTX3704 MPS3705 ZTX3705 MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 n3906 transistor ZTX302 945 MOTHERBOARD CIRCUIT diagram MPS3710 ZTX108 MPS3704