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    2N3501 Price and Stock

    Central Semiconductor Corp 2N3501-PBFREE

    TRANS NPN 150V 0.3A TO39
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    DigiKey 2N3501-PBFREE Bulk 279 1
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    Microchip Technology Inc MSR2N3501UB-TR

    RH SMALL-SIGNAL BJT
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    MSR2N3501UB-TR Digi-Reel 100 1
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    MSR2N3501UB-TR Cut Tape 100 1
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    Microchip Technology Inc 2N3501UB

    TRANS NPN 150V 0.3A UB
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    DigiKey 2N3501UB Bulk 60 1
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    Avnet Americas 2N3501UB Reel 22 Weeks 100
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    2N3501UB 34 1
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    Microchip Technology Inc 2N3501UB 477 1
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    NAC 2N3501UB 19
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    Master Electronics 2N3501UB 143
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    Microchip Technology Inc JAN2N3501

    TRANS NPN 150V 0.3A TO39
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    DigiKey JAN2N3501 Bulk 41 1
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    Microchip Technology Inc JAN2N3501 276
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    Avnet Silica JAN2N3501 24 Weeks 100
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    Microchip Technology Inc 2N3501

    TRANS NPN 150V 0.3A TO39
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    DigiKey 2N3501 Bulk 1
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    Mouser Electronics 2N3501
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    Onlinecomponents.com 2N3501
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    NAC 2N3501 34
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    Master Electronics 2N3501
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    2N3501 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3501 Central Semiconductor Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Original PDF
    2N3501 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 150V 300MA TO-39 Original PDF
    2N3501 Micro Commercial Components TRANS GP BJT NPN 150V 0.3A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Original PDF
    2N3501 Microsemi 150 Volts 500mAmps NPN BIPOLAR TRANSISTOR - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Original PDF
    2N3501 Microsemi NPN Silicon Transistor Original PDF
    2N3501 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Original PDF
    2N3501 Semico Chip Type 2C3501 Geometry 5620 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Original PDF
    2N3501 Semico Chip: 6.0V geometry 5620 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Original PDF
    2N3501 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3501 Bharat Electronics Transistor Selection Guide Scan PDF
    2N3501 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (NPN SILICON) - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1 Scan PDF
    2N3501 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan PDF
    2N3501 Central Semiconductor NPN METAL CAN Transistors Scan PDF
    2N3501 Continental Device India Metal Can and Epoxy Transistors Scan PDF
    2N3501 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3501 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3501 General Diode Transistor Selection Guide Scan PDF
    2N3501 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3501 Motorola European Master Selection Guide 1986 Scan PDF
    2N3501 Motorola Power Transistor Selection Guide Scan PDF

    2N3501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501LJ • JANTX level (2N3501LJX)


    Original
    PDF 2N3501L MIL-PRF-19500 2N3501LJ) 2N3501LJX) 2N3501LJV) 2N3501LJS) MIL-STD-750 MIL-PRF-19500/366

    2N3500L

    Abstract: 2N3501L
    Text: Data Sheet No. 2N3501L Generic Part Number: 2N3500L Type 2N3501L Geometry 5620 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/366 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-5 case. •


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    PDF 2N3501L 2N3500L MIL-PRF-19500/366 MIL-PRF-19500/366 2N3500L 2N3501L

    Untitled

    Abstract: No abstract text available
    Text: 2N3501 MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • 150 Volts 500mAmps TO-39 Package Meets MIL-S-19500/366


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    PDF 2N3501 500mAmps MIL-S-19500/366

    2n3498

    Abstract: No abstract text available
    Text: 2N3498L thru 2N3501L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498L thru 2N3501L epitaxial planar transistors are military qualified up to a


    Original
    PDF 2N3498L 2N3501L MIL-PRF-19500/366 2N3501L 2N3498 2N3501 2N3498, 2N3499, 2N3500,

    2N3501

    Abstract: 2N3501UB 2n3500
    Text: JANS 2N3498 thru JANS 2N3501 RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 Qualified Levels: JANSM, JANSD, JANSP, JANSL and JANSR DESCRIPTION This family of JANS 2N3498 through JANS 2N3501 epitaxial, planar transistors are military


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    PDF 2N3498 2N3501 MIL-PRF-19500/366 T4-LDS-0056, 2N3501UB 2n3500

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION


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    PDF 2N3498, 2N3499, 2N3500, 2N3501 2N3498 2N3499 2N3500 C-120 2N3498

    2N3501LJV

    Abstract: 2N3501LJX 2N3501L 2N3501LJ 2N3501LJS
    Text: 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501LJ • JANTX level (2N3501LJX)


    Original
    PDF 2N3501L MIL-PRF-19500 2N3501LJ) 2N3501LJX) 2N3501LJV) 2N3501LJS) MIL-STD-750 MIL-PRF-19500/366 2N3501LJV 2N3501LJX 2N3501L 2N3501LJ 2N3501LJS

    2N3501

    Abstract: No abstract text available
    Text: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3501J • JANTX level (2N3501JX)


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    PDF 2N3501 MIL-PRF-19500 2N3501J) 2N3501JX) 2N3501JV) 2N3501JS) MIL-STD-750 MIL-PRF-19500/366 2N3501

    Untitled

    Abstract: No abstract text available
    Text: 2N3501+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100


    Original
    PDF 2N3501 Freq150M Code3-12

    Untitled

    Abstract: No abstract text available
    Text: 2N3501+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100


    Original
    PDF 2N3501 Freq150M Code3-12

    2n3501ub

    Abstract: microsemi ub package tape reel jans2n3501ub
    Text: JANS 2N3501UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA


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    PDF 2N3501UB MIL-PRF-19500/366 2N3501, T4-LDS-0056-2, microsemi ub package tape reel jans2n3501ub

    Untitled

    Abstract: No abstract text available
    Text: 2N3498 thru 2N3501 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a


    Original
    PDF 2N3498 2N3501 MIL-PRF-19500/366 2N3501 2N3498, 2N3499, 2N3500,

    Untitled

    Abstract: No abstract text available
    Text: 2N3501 MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN BIPOLAR TRANSISTOR Features • • • • • Meets MIL-S-19500/366 Collector-Base Voltage 150V


    Original
    PDF 2N3501 MIL-S-19500/366

    150M

    Abstract: 2N3501
    Text: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)


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    PDF 2N3501 O205AD) 1-Aug-02 150M 2N3501

    2N3501 MOTOROLA

    Abstract: 2N3501 k5c transistor 2N3501JAN AICB
    Text: MOTOROU Orderthls document by 2N3501JANID SEMICONDUCTOR TECHNICAL DATA 2N3501JAN, JTX, JTXV, JANS Processed per MIL4-195001366 NPN Silicon SmallSignal Transistors .designed for genera~urpose switching and amplifier applications in hig~voltage .,!.\ ELECTRICAL


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    PDF 2N3501JANID 2N3501JAN, MIL4-195001366 lPHX241011-2 2N3501 2N3501 MOTOROLA k5c transistor 2N3501JAN AICB

    Untitled

    Abstract: No abstract text available
    Text: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)


    Original
    PDF 2N3501 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016)


    Original
    PDF 2N3501 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3501DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original
    PDF 2N3501DCSM MO-041BB) 2-Aug-02

    2N3501

    Abstract: 2N3501J 2N3501JS 2N3501JV 2N3501JX MIL-PRF-19500/-2N3501
    Text: 2N3501 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3501J • JANTX level (2N3501JX)


    Original
    PDF 2N3501 MIL-PRF-19500 2N3501J) 2N3501JX) 2N3501JV) 2N3501JS) MIL-STD-750 MIL-PRF-19500/366 2N3501 2N3501J 2N3501JS 2N3501JV 2N3501JX MIL-PRF-19500/-2N3501

    Untitled

    Abstract: No abstract text available
    Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2N 3501 $ id L SEMICONDUCTORS Type 2N3501 G eneric Part Num ber: 2N3500 G eom etry 5620 Polarity NPN Qual Level: J A N -J A N S


    OCR Scan
    PDF 2N3501 2N3500 MIL-PRF-19500/366

    2N2992

    Abstract: 23028 2N3016 JANTX2N3440
    Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D ata S heet No. 2 N 3 5 0 1 L $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3500L Type 2N3501L G eom etry 5620 Polarity NPN Qual Level: J A N -J A N S


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    PDF 2N3500L 2N3501L MIL-PRF-19500/366

    bi 370 transistor e

    Abstract: No abstract text available
    Text: Micmsemi a wmcnmwn, m m m 580 Pleasant St. W atertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N3501 Features • • • • 150 Volts 500mAmps Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: 500 mA Fast Switching 1265 nS NPN


    OCR Scan
    PDF 2N3501 MIL-S-19500/366 500mAmps 100kH 10Vdc, 12Vdc, MSC0282A bi 370 transistor e

    2N3501 MOTOROLA

    Abstract: 2N3499 n-3500
    Text: MOTOROLA SC XSTPS/R F hflE D • b3t.72SH GGTÌ442 SÔ7 ■ MOTb 2N3499 thru 2N3501* M A X I M U M R A T IN G S 2N3499 2N3500 2N3501 U n it Sym bol C o llector-E m itter V oltag e V CEO 100 150 V dc C o llector-B ase V oltage VCBO 100 150 V dc E m itter-Base V olta g e


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    PDF 2N3499 2N3500 2N3501 2N3501* O-205AD) 2N3501 b3b7254 2N3501 MOTOROLA n-3500