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    2N3467 DIE Search Results

    2N3467 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    2N3467 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3467

    Abstract: 2n3762 chip type geometry 2N37
    Text: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance


    Original     		PDF 2C3762 2C3762 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3467 2n3762 chip type geometry 2N37

    2n3467

    Abstract: 348F datasheet 2N3467L 2N3468 2N3468L 2N3647 2N3648 2N3467 Die
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May 2005. INCH-POUND MIL-PRF-19500/348F 15 February 2005 SUPERSEDING MIL-PRF-19500/348E 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/348F MIL-PRF-19500/348E 2N3467, 2N3467L, 2N3468, 2N3468L, MIL-PRF-19500. 2n3467 348F datasheet 2N3467L 2N3468 2N3468L 2N3647 2N3648 2N3467 Die

    2N3467

    Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING


    Original     		PDF MIL-PRF-19500/348E MIL-S-19500/348D 2N3467, 2N3467L, 2N3468, 2N3468L, MIL-PRF-19500. 2N3467 2N3467L 2N3468 2N3468L 2N3647 2N3648

    2N3467

    Abstract: CP603 TRANSISTOR GUIDE 2N3468
    Text: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA


    Original     		PDF CP603 2N3467 2N3468 2N3467 CP603 TRANSISTOR GUIDE 2N3468

    2N3467 Die

    Abstract: 2N3467 2N3468 CP667
    Text: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area


    Original     		PDF CP667 2N3467 2N3468 2N3467 Die 2N3467 2N3468 CP667

    2N3467

    Abstract: transistor 735 transistor CHIP TRANSISTOR isd chipcorder application notes isd25120 2N3468 CP767
    Text: PROCESS CP767 Small Signal Transistor PNP- Saturated Switch Transistor Chip PRELIMINARY PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization


    Original     		PDF CP767 2N3467 2N3468 24-June 2N3467 transistor 735 transistor CHIP TRANSISTOR isd chipcorder application notes isd25120 2N3468 CP767

    2N3906

    Abstract: 2N2222 hfe 2N3904 NPN dip
    Text: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS


    Original     		PDF O-116 MPQ2222 MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907 MPQ2907A MPQ3467 MPQ3725 2N3906 2N2222 hfe 2N3904 NPN dip

    2n222a

    Abstract: 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762
    Text: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX fT (pF) (MHz) NF Typ † (dB)


    Original     		PDF O-116 MPQ2222 2N2222 MPQ2222A 2N222A MPQ2369 2N2907 MPQ6700 2N3904 2n222a 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


    Original     		PDF MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic

    2N6309

    Abstract: pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5304 2N5974
    Text: AN569/D Transient Thermal Resistance General Data and Its Use Prepared by: Bill Roehr and Bryce Shiner ON Semiconductor Applications Engineering http://onsemi.com APPLICATION NOTE Introduction For a certain amount of dc power dissipated in a semiconductor, the junction temperature reaches a value


    Original     		PDF AN569/D r14525 2N6309 pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5304 2N5974

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


    Original     		PDF A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866

    TO-225AA

    Abstract: silicone 813 dow corning RCA THYRISTOR
    Text: SECTION 8 RELIABILITY AND QUALITY Edited and Updated stable. However, for pulses in the microsecond and millisecond region, the use of steady–state values will not yield true power capability because the thermal response of the system has not been taken into account.


    Original     		PDF 029/TO 226AA 077/TO 225AA 21A/TO 267/Axial TO-225AA silicone 813 dow corning RCA THYRISTOR

    KE4416

    Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
    Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents


    OCR Scan     		PDF DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375

    PIN CONFIGURATION 2N2222

    Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
    Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS


    OCR Scan     		PDF O-116 2N2222 MPQ2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PIN CONFIGURATION 2N2222 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp

    PNP 2N3904

    Abstract: 2n2222 pin 2N2222 2N2222 pnp 2N3906
    Text: Quad Transistors* '^00 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVq b o bvceo BVe b o 00 (Vi (V) (nA) MIN MIN MIN MAX *CBO v CBO hpE @ iC (mA) (V) MIN VCE(SAT) ® 'C (V) (mA) MAX ^ob *T NF *OFF COMMENTS


    OCR Scan     		PDF O-116 MPQ2222 2N2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PNP 2N3904 2n2222 pin 2N2222 2N2222 pnp 2N3906

    PNP 2N3904

    Abstract: 2N2222 2N2222 pnp 2N3906
    Text: Quad Transistors* TO-116 Case 14PinDip Tc (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b o bvceo bvebo 00 00 00 (nA) 1m MIN MIN MAX 'CBO VCBO hFE vC E(SAt) • *C (mA) w MIN (V) (mA) MAX ^ob *r (PF) MAX Mm NF *OFF COMMENTS my


    OCR Scan     		PDF O-116 14PinDip) MPQ2222 2N2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6100A PNP 2N3904 2N2222 2N2222 pnp 2N3906

    2N2222 pnp

    Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip
    Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ *c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob *r (pF) (MHz)


    OCR Scan     		PDF O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 2N2222 pnp 2X PNP TRANSistors PNP 2N3904 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip

    SVT-6060

    Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
    Text: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1


    OCR Scan     		PDF OTC1015 OTC1015, OTC6030, OTC6050 OTC1015 OTC6030 OTC6050 U1K50nS M4307 200fiHY SVT-6060 oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC6030

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. 2C 3762 SEMICONDUCTORS G e n e ric P a cka g e d P arts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N 3467, 2N 3467L, 2N 3468, 2N 3468L, 2N 3762, 2N 3762L, 2N 3763, 2N 3763L, 2N 3764, 2N 3765 1 Chip type 2C3762 by Semicoa Semi­ conductors provides performance


    OCR Scan     		PDF 2C3762 3467L, 3468L, 3762L, 3763L, 2C3762 2N3467, 2N3467L, 2N3468, 2N3468L,

    SP3467QDB

    Abstract: No abstract text available
    Text: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor.


    OCR Scan     		PDF 2N3467/JAN 2N3468/JAN 2N3762/JAN 2N3763/JAN O-116) 14-Lead 54BSC 100BSC SP3467QDB

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO Collector Current — Continuous 'c Total Device Dissipation a Ta = 25X11) Derate above 25°C Pd Total Device Dissipation (w Tc - 25°C


    OCR Scan     		PDF MPQ3467* O-116 25X11)

    Untitled

    Abstract: No abstract text available
    Text: M AXIM U M RATINGS Rating Symbol Valu* Unit V C EO - 40 Vdc C o lle cto r-B a se V olta g e VCBO - 40 V dc Em itte r-B a se V olta g e Ve b o - 5.0 Vdc 'c - 1.5 Ade C o lle c to r-E m itte r V olta g e C o lle c to r C urre n t — C o n tin u o u s T o tal D evice D issip a tio n


    OCR Scan     		PDF MPQ3762 O-116

    ic Lb 598 d

    Abstract: MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3
    Text: MPQ3467 SILICON QUAD D UAL IN-LINE PNP SILICO N AN N ULAR MEMORY D R IV E R TRA N SISTO R S QUAD DUAL-IN -LINE PNP SILICO N M EM ORY D R IV E R TR A N SISTO R S . . . designed for medium-current, high-speed switching, ferrite core and plated w ire memory driver, and MOS translator applications.


    OCR Scan     		PDF MPQ3467 2N3467 O-116 100MHzl 50mAdc) 100kJÃ ic Lb 598 d MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3