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    Microchip Technology Inc 2N1487

    POWER BJT
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    RCA 2N1487

    40 V, NPN, Si, POWER TRANSISTOR, TO-3
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    2N1487 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1487 Microsemi NPN SILICON HIGH POWER TRANSISTOR Original PDF
    2N1487 New England Semiconductor BJT, NPN, Medium Power Transistor, IC 6A Original PDF
    2N1487 API Electronics Short form transistor data Short Form PDF
    2N1487 API Electronics Transistor Selection Guide Scan PDF
    2N1487 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N1487 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N1487 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N1487 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1487 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1487 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1487 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1487 Unknown GE Transistor Specifications Scan PDF
    2N1487 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1487 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1487 Unknown NPN Silicon Transistor, High Power Scan PDF
    2N1487 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1487 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1487 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N1487 Unknown Vintage Transistor Datasheets Scan PDF
    2N1487 New England Semiconductor NPN TO-3 Transistor Scan PDF

    2N1487 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1489

    Abstract: 2N1498 2N1487 2N1490 2N1488
    Text: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices 2N1487 Qualified Level 2N1488 2N1489 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    Original     		PDF MIL-PRF-19500/208 2N1487 2N1488 2N1489 2N1490 2N1498 O-204AA) 2N1489 2N1498 2N1487 2N1490 2N1488

    2N1487

    Abstract: 2N1489 2N1490 2N1488 2N1498
    Text: TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/208 Devices 2N1487 Qualified Level 2N1488 2N1489 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    Original     		PDF MIL-PRF-19500/208 2N1487 2N1488 2N1489 2N1490 2N1498 O-204AA) 2N1487 2N1489 2N1490 2N1488 2N1498

    2N1487

    Abstract: No abstract text available
    Text: 2N1487 Si NPN Power BJT 9.01 Transistors Transistors Bipolar Si NPN Power Transisto. Page 1 of 1 Enter Your Part # Home Part Number: 2N1487 Online Store 2N1487 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N1487 2N1487 com/2n1487

    2N1489

    Abstract: 2N1487 2N1488 2n1498
    Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N1487 JAN, JTX, JTXV 2N1488 JAN, JTX, JTXV 2N1489 JAN, JTX, JTXV 2N1490 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/208 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1487


    Original     		PDF 2N1487 2N1488 2N1489 2N1490 MIL-PRF-19500/208 2N1498 2N1490 O-204AA) 2n1498

    Untitled

    Abstract: No abstract text available
    Text: 2N1487+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1487

    2N1487

    Abstract: 2n1498 2N1489 2N1490 2N1488
    Text: TECHNICAL DATA 2N1487 JAN, JTX, JTXV 2N1488 JAN, JTX, JTXV 2N1489 JAN, JTX, JTXV 2N1490 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/208 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1487 2N1498 2N1488 2N1490 Units VCEO


    Original     		PDF 2N1487 2N1488 2N1489 2N1490 MIL-PRF-19500/208 2N1487 2N1498 2N1488 2N1490 O-204AA) 2n1498

    Untitled

    Abstract: No abstract text available
    Text: 2N1487 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1487

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671

    2N1489

    Abstract: 2N5686A 2N5929 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS VcEO PACKAGE DEVICE TYPE ^FE@ I C/ V ce (min/max @ A/V) VcE(jat) @ (V @ A/A) pr D* WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 3@1.5/.3


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 2N5686A 2N5929

    O7703

    Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
    Text: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt­


    OCR Scan     		PDF MIL-S-19500/208B 19500/208A 2N1487, 2N1488, 2N1489, 2N1490 2N1487 2N1489 2N1488 O7703 ic sj 2036 2N1490 oc142 2N148B b961 Transistor 1967

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS ^CEO PACKAGE DEVICE TYPE l*FE@ IC/ VCE (min/max @ A/V) VcE(sat) @ Ic^B (V @ A/A) p * WATTS fT (MHz) NPN 2N1487 40 6 15-45@ 1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 3@1.5/.3


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055 2N3713 2N3714 2N3715 2N3716 2N4070

    40411 transistor

    Abstract: transistor 40411 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3771 2N3772
    Text: un ic / m PNP •Ty p « * “7 ComplaHMnt V c e x tu t ic Volts) M ax (Mln-Max @ A/¥) 2N1487 2N1488 2N1489 2N1490 2N1702 40 55 40 55 40 6.0 6.0 6.0 6.0 5.0 15-45 @ 1.5/4 15-4501.5/4 25-7501.5/4 25-75 @ 1.5/4 15-60 @ .8/4 2N3442 2N4347 2N6262 140 120


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N6262 002/2N3716 2N4913 40411 transistor transistor 40411 2N1702 2N3771 2N3772

    2N3238

    Abstract: 2N3233 2N3236 2N3239 2N3232 2N3240 2N3667 2N3863
    Text: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS Ic V V A V h FE MIN MAX Ic A ? VCE V Sat Test Voltages Conditions V a V bc Ic Ib la o V V A A ma 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 2N1070 50 60 45 9 4 10 50 1.5 4 1 4.5 1.5 .3 .100 2N1487


    OCR Scan     		PDF 2N1069 2N1070 2N1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3232 2N3233 2N3238 2N3236 2N3239 2N3240 2N3667 2N3863

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    Untitled

    Abstract: No abstract text available
    Text: NEU ENGLAND SEMICONDUCTOR SIE I • b S b m i B 000005S 370 * N E S 2-50 A V ceo sus = 3 5 -5 0 0 V fr =0 .2 -5 0 MHz NPN TO-3 lc (M A X ) — Case 803 Case 804 Type No. 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447 2N3448 2N3713 2N3714 2N3715


    OCR Scan     		PDF 000005S 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447

    Untitled

    Abstract: No abstract text available
    Text: m 2N1487 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS V lc 6.0 A Ib 3.0 A ce SE A T N G PLAN t 40 V P diss 75 W @ Tc = 25 °C Tj -65 °C to +200 °C


    OCR Scan     		PDF 2N1487 2N1487

    Untitled

    Abstract: No abstract text available
    Text: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069


    OCR Scan     		PDF 2N5468 2N5469 2N2811 2N2812 2N2813 2N6495 2N4231 2N4232A 2N4233 2N4233A

    2N1487

    Abstract: No abstract text available
    Text: 2N1487 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 6.o A Ib 3.o A 4o V O m le < MAXIMUM RATINGS P d is s 75 W @ Te $ 25 0C Tj -65 °C to +2oo 0C Tstg -65 0C to +2oo 0C


    OCR Scan     		PDF 2N1487 2N1487

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135


    OCR Scan     		PDF 0000SS7 AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    transistor 40411

    Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
    Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30


    OCR Scan     		PDF TC-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


    OCR Scan     		PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327