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    2N113 Price and Stock

    Susumu Co Ltd RG2012N-113-D-T5

    RES SMD 11K OHM 0.5% 1/8W 0805
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    DigiKey RG2012N-113-D-T5 Digi-Reel 4,980 1
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    RG2012N-113-D-T5 Cut Tape 4,980 1
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    Mouser Electronics RG2012N-113-D-T5 3,931
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    Microchip Technology Inc 2N1131L

    POWER BJT
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    Onlinecomponents.com 2N1131L
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    Vishay Sfernice RMK22N113KB

    SFERNICE THIN FILMS
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    Central Semiconductor Corp 2N1131-PBFREE

    TRANS PNP 50V 0.6A TO39
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    Central Semiconductor Corp 2N1131A-PBFREE

    TRANS PNP 40V TO39
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    2N113 Datasheets (322)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N113 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N113 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N113 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N113 Unknown Vintage Transistor Datasheets Scan PDF
    2N113 Unknown Vintage Transistor Datasheets Scan PDF
    2N113 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N113 Unknown GE Transistor Specifications Scan PDF
    2N113 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N113 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1130 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1130 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1130 Unknown Vintage Transistor Datasheets Scan PDF
    2N1130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1130 Unknown GE Transistor Specifications Scan PDF
    2N1130 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1131 Microsemi LOW POWER PNP SILICON TRANSISTOR Original PDF
    2N1131 Microsemi BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A Original PDF
    2N1131 Central Semiconductor METAL CAN Transistors Scan PDF
    ...

    2N113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1131L

    Abstract: No abstract text available
    Text: 2N1131L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF 2N1131L O205AA) 20-Aug-02 2N1131L

    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Text: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


    Original     		PDF 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136 2N1159 2N1537 N1137 Germanium power

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


    Original     		PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    2N1131

    Abstract: No abstract text available
    Text: 2N1131 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1131 Availability Online Store


    Original     		PDF 2N1131 2N1131 STV3208 LM3909N

    PA6015A

    Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219


    Original     		PDF 2Nl199A 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 PA6015A 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015

    transistor 8069

    Abstract: 2N1132 LE17
    Text: SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N1132 -600mA 600mW O-205AD) transistor 8069 2N1132 LE17

    transistor 102

    Abstract: 2N1132CSM TF80F doc7518
    Text: 2N1132CSM MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1.02 ± 0.10 (0.04 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PNP TRANSISTOR. • HIGH SPEED SWITCHING


    Original     		PDF 2N1132CSM 150mA transistor 102 2N1132CSM TF80F doc7518

    2n2369 avalanche

    Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
    Text: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010


    Original     		PDF 2N1131 2N718A 2N1711 2N4949 5961-E084 5980-E011 5980-E010 5961-E087 5961-E079 2n2369 avalanche 2N7373 gc. marking 2N2222 2N2369 2N2432 2N2484

    Untitled

    Abstract: No abstract text available
    Text: 2N1130 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)250m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50 h(FE) Max. Current gain.165


    Original     		PDF 2N1130 Freq750kÃ

    Untitled

    Abstract: No abstract text available
    Text: 2N1132B Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)70 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N1132B

    Untitled

    Abstract: No abstract text available
    Text: 2N1131+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N1131

    Untitled

    Abstract: No abstract text available
    Text: 2N1139 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N1139

    2N1132

    Abstract: No abstract text available
    Text: 2N1132 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N1132 O205AD) 1-Aug-02 2N1132

    Untitled

    Abstract: No abstract text available
    Text: 2N1138 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)3.0


    Original     		PDF 2N1138

    2N1195

    Abstract: pnp germanium transistor TRANSISTOR SUBSTITUTION
    Text: MIL-S-19500/71D 29 June_1067 SU PER SED IN G M IL -S -195 00/71C 17 January 1961 See 6.3 M IL IT A R Y SPEC IFIC A T IO N SEM ICOND UCTO R D E V IC E , TRAN SISTO R, PN P , G ERM AN IU M , LO W -PO W ER T Y P E 2N1135 This specification is mandatory for use by a ll Depart­


    OCR Scan     		PDF MIL-S-19500/71D MIL-S-19500/71C 2N1195 MIL-S-19500 MIL-S-19500/71C. 2N1195 pnp germanium transistor TRANSISTOR SUBSTITUTION

    SP2605F

    Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
    Text: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"


    OCR Scan     		PDF 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131" 2N1132* SP2605F 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn

    MMBT3905

    Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
    Text: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365


    OCR Scan     		PDF S01130 BCF29 O-236 BCF30 BCW61A 2N1132A 2N2904 2N2905 MMBT3905 MMBT2904 2N2906 to-92 LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


    OCR Scan     		PDF T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484

    BCY78

    Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
    Text: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    Untitled

    Abstract: No abstract text available
    Text: GERMANIUM POWER TRANSISTORS Type N um ber Case Type Y CBO V ^ ' IO V C U R R E N T G A IN y,„ , V ^ CES V V Min. V Max. A S A T U R A T IO N V O L TA G E S Vctm Kit,., V V A A 0, c ° C /W 6 A M P G E R M A N IU M P N P C o n t. 2N1137B 2N1138 2N 1138A


    OCR Scan     		PDF 2N1137B 2N1138 2N1138B MT-36 NS257

    TI429

    Abstract: TI428
    Text: TYPES 2N2393, 2N2394 P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L - S 6 46063, O C T O B E R 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI428 and TI429 • Electrically Similar to 2N1131 and 2N1132 • Compatible Package For Interfacing With Integrated Circuits and


    OCR Scan     		PDF 2N2393, 2N2394 TI428 TI429 2N1131 2N1132 PR00UCT TI429

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18


    OCR Scan     		PDF 2N720A 2N721 2N91I 2N956 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A