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    2N251A Price and Stock

    Nisshinbo Micro Devices R3112N251A-TR-FE

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    DigiKey R3112N251A-TR-FE Digi-Reel 7,530 1
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    Bourns Inc PV32N251A01B00

    TRIMMER 250 OHM 0.5W PC PIN SIDE
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    Nisshinbo Micro Devices R3112N251A-TL-FE

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    Nisshinbo Micro Devices R1122N251A-TR-FE

    IC REG LINEAR 2.5V 150MA SOT23-5
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    Rochester Electronics R1122N251A-TR-FE 3,000 1
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    New Japan Radio Co Ltd R3112N251A-TR-FE

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    Chip1Stop R3112N251A-TR-FE Cut Tape 2,908
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    2N251A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N251A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N251A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N251A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N251A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N251A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N251A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N251A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N251A Unknown Vintage Transistor Datasheets Scan PDF
    2N251A Semitron Germanium Power Transistors Scan PDF
    2N251A Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N251A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Text: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


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    PDF 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136 2N1159 2N1537 N1137 Germanium power

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


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    PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A

    ASZ16

    Abstract: asz1015 AL103 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15
    Text: POWER GERMANIUM TRANSISTORS Item Number >C Part Number Manufacturer Type Max V BR CEO (A) Of) PD Max hre *T ON) Min (HZ) Max km Max (A) (8) ICBO r (CE)Mt Max (Ohms) T Oper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 ASZ1015 AUY30 AUY28 AUY28


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    PDF ASZ1015 AUY30 AUY28 2SB342 AL102 AL103 ASZ16 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15

    2N555

    Abstract: Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N257 2N307 2N250
    Text: germanium power transistors _ T03/ See Pg. 147 for outline d 144 -~-~~-~~- -~ PNP ALLOY TRANSISTORS .42Amp BREAKDOWN VOLTAGES TYPE NUMBER VCB 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N419 2N554 -25 -50 -15 -30 -40


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    PDF 42Amp) 2N234A 2N235B 2N255A 2N256A 2N257 2N285A 2N285B 2N399 2N401 2N555 Germanium power 2N554 2N176 2N553 2N242 2N257 DRAWING 2N307 2N250

    2N4588

    Abstract: dtg110 2S8337 ASZ1015 ASZ1018 2N4568 PTC120A 2S8407 AL113 MP3618
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 30 2S8465 2N1906 AUY28 AUY28 AUY28 2Nl1378 2Nl136A 2Nl1368 ~~~~~~ 35 40 AL103 AL103 AL103 AL102 AL102 AL102 2N5887 2N456A ~r-:,~~~~ 45 50 2N5888 2N5889 2N4568 2N457A MP3611 2N3611 2S8338 2S8337 ~~~~~~


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    PDF 2S8128 ASZ1018 AUY31 ALl13 AL113 2S8129 2Nl136 2N1668 2N1667 2N1905 2N4588 dtg110 2S8337 ASZ1015 2N4568 PTC120A 2S8407 MP3618

    2n113

    Abstract: 2N2146 N1137 2N1136B Germanium power 2N351A 2N2140A 2N1537 2N637 2N376A
    Text: germanium power transistors 145 PNP ALLOY TRANSISTORS .5 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER Vel VeE VEl VeE Ie (A) Min. Max. Vel rnA 2N2138A 2N2139 2N2139A 2N2140 2N2140A 2N2141 2N2141A 2N2142 2N2142A 2N2143 2N2143A 2N2144 2N2144A 45 45A


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    PDF 2N2138A 2N2139 2N2139A 2N2140 2N2140A 2N2141 2N2141A 2N2142 2N2142A 2N2143 2n113 2N2146 N1137 2N1136B Germanium power 2N351A 2N1537 2N637 2N376A

    2n185

    Abstract: BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434


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    PDF 2N2523 MPS929 MPS930 BC485 BC485-18 2n185 BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco

    2N3614

    Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022


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    PDF 2N1137B 2N1138 2N1138A 2N1138B 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N3614 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    2N1545

    Abstract: 2N1546 2N457 2N1548 2N1137A 2N1168 2N1537A 2N1540 2N456A 2N2267
    Text: 51 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN T Y PE N U M BER C ASE TYPE V CBO V I V CEO v e:b o V V 5 AMP G ERM A N IlJM PNP 2N1168 TO 3 2N1529 TO-3 2N1529A TO-3 50 40 40 2N1530 TO-3 2N1530A TO-3 2N1531 TO-3 V C ER V V C ES V hZE M IN. M AX. V CE


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    PDF 2N1168 2N1529 2N1529A 2N1530 2N1530A 2N1531 2N1531A 2N1532 2N1532A 2N1168 2N1545 2N1546 2N457 2N1548 2N1137A 2N1537A 2N1540 2N456A 2N2267

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    IN733A

    Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
    Text: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano


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    PDF 2N582 2N5828 2N5828A 2N5829 2N5830 2N5831 2N5832 2N5833 2N6000 2N6004 IN733A 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2N375

    Abstract: 2N456A 2N1533 2N539A 2N1545 2n555 2N1543 2N669 2N25 2N176
    Text: 49 GERMANIUM POWER TRANSISTORS C U R R E r JT G A IN type: N U M B ER C A SE TYPE V CBO V V CEO V V E BO V VCER V V C ES V M IN. hIFE | M AX. V CE V SA T U R A T IO r M V O L T A G E S ë> I 'c A V CE(s V BE(sl V | V 'c A 'b I A 2 AMP G ER VIANILIM PNP 2N250


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    PDF 2N250 2N25I 2N296 2N30I 2N30IA MT-36 2N155 2N176 2N235A 2N1168 2N375 2N456A 2N1533 2N539A 2N1545 2n555 2N1543 2N669 2N25

    2N236A

    Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
    Text: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N236A 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214

    2N1227

    Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
    Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1227 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N236A 2N420

    2N458

    Abstract: 2n448 2N301 2N404 transistor 2N384 2N456A transistor 2N3 2N441 TRANSISTOR 2N492 transistor 2N2
    Text: DIGITRON ELECTRONIC CORP 3t.E D • 2a4Efc.O? OODODOl 5 m DGE / Pagell £ ■■' ■■ DIQITRON ELECTRONIC 3UL 2 2 1988 ■■■ - CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No, J O H N J. S C H WARTZ


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    PDF 2N235 2N280 2N327A 2N381 2N414A 2N466 2N235A 2N281 2N328 2N415 2N458 2n448 2N301 2N404 transistor 2N384 2N456A transistor 2N3 2N441 TRANSISTOR 2N492 transistor 2N2