2N 5088 TRANSISTOR Search Results

2N508

Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

2n508

Abstract: 2n5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage

2N5088

Abstract: 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor
Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2NS088: 30V 2N5089: 25V • Collector Dissipation: Pc m ax =625m W V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4 .5 50 625 150 —55^-* 1 5 0

2NS089

Abstract: 2n 5088 transistor 2N5088 STC 5089
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N5088: 30V 2NS089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4.5 50 62 5 150 -5 5 ^ 1 5 0

2N5081

Abstract: transistor 2N5086 2N5086 2n508 2n5088 transistor 2N5087 2N5088 2N5089
Contextual Info: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. IBC (PNP) ABSOLUTE MAXIMUM RATINGS

2N5088

Abstract: 2N5088 MOTOrola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Tran sistors NPN Silicon BASE EMITTER M A X IM U M R A T IN G S Rating C o llector-E m itter Voltage Symbol 2N5088 2N5089 Unit VCEO 30 25 Vdc 35 30 vdc C o llecto r-B ase Vottage VC B O E m itte r-B a s e Voltage

2n5088 transistor

Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0

5089

Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
Contextual Info: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

2N5088

Abstract: marking 2n sot23
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features • · · · MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 A C TOP VIEW

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

2n 5088 transistor

Abstract: NPN transistor 500ma TO-92 2n5088 transistor MMBT5088 transistor TO-92 mil-std c 5088 2N5088 2N5089 MMBT5089 432 sot23
Contextual Info: 2 N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 -H.h-A TOF* VIEW • &

Contextual Info: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS / u T E M ir I POWER SEMICONDUCTOR J Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplitier

Contextual Info: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for

Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage

6428A

Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428
Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage

2n5088 transistor

Abstract: 2N5088 2N6428A
Contextual Info: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D | 7^4142 □ 0 D 7 1 £i 3 fc, | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2n 2222A 3904

Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470

Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage

2N6428A

Contextual Info: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

2sc 9015

Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
Contextual Info: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+

BCM 4359

Abstract: transistor 4287 AB transistor 3901
Contextual Info: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K